Datasheet SiE806DF Datasheet (VISHAY)

SiE806DF

PRODUCT SUMMARY

VDS (V)

0.0017 at V

30

0.0021 at V

Package Drawing

r

DS(on)

D

e

(Ω)

= 10 V 202

GS

= 4.5 V 187

GS

678910
DSSGD

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

• TrenchFET® Gen II Power MOSFET

• Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK
Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

gd/Qgs

• 100 % R

APPLICATIONS

•VRM

• DC/DC Conversion: Low-Side

• Synchronous Rectification

Silicon

Limit

PolarPAK

67 8 9

ID (A) Qg (Typ)

Packag e

Limit

60

60

75 nC

10

DDSG

Vishay Siliconix

®

Package for

Ratio Helps Prevent Shoot-Through

and UIS Tested

g

D

RoHS

COMPLIANT

DSSGD
54321

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE806DF-T1-E3 (Lead (Pb)-free)

14325

For Related Documents

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

C

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

T

C

DS

GS

I

D

TA = 25 °C
TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current
Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C 80

C

= 25 °C

T

A

DM

I

S

I

AS

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range

d, e

Soldering Recommendations (Peak Temperature)

Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

, T

J

stg

Document Number: 73740
S-60620-Rev. A, 24-Apr-06

Limit

30

± 12

202 (Silicon Limit)

a

60

(Package Limit)

a

60

b, c

41.3

b, c

33

100

a

60

b, c

4.3
50

125 mJ
125

b, c

5.2

b, c

3.3

- 50 to 150
260

Unit

V

A

W

°C

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1

SiE806DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).

a, b

a, c

t ≤ 10 sec R

Steady State

R

thJA

(Drain) 0.8 1

R

thJC

(Source) 2.2 2.7

thJFC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔV

V

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage V
Gate-Source Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

DS

DS /TJ

GS(th) /TJ

GS(th)

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

V

DS

V

V

DS

V

DS

I

D

I

D

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V
V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 25 A

GS

= 4.5 V, ID = 25 A

V

GS

V

= 15 V, ID = 25 A

DS

= 15 V, V

DS

= 15 V, V

= 15 V, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

ID = 250 µA

, ID = 250 µA

GS

GS

= 0 V, TJ = 55 °C

GS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 20 A

GS

= 4.5 V, ID = 20 A

GS

f = 1 MHz 0.9 1.35 Ω

= 4.5 V, Rg = 1 Ω

GEN

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 10 A

Typical Maximum

20 24

= ± 12 V

= 0 V

GS

= 10 V

GS

Unit

°C/W

30 V

29

- 5.1

mV/°C

0.6 1.3 2 V
± 100 nA

1

10

25 A

0.0014 0.0017

0.0017 0.0021
130 S

13000

1150

550
165 250

75 115
23

9.5

125 190
160 240

85 130
15 25
20 30
50 75
85 130
10 15

60

100

0.9 1.2 V
52 80 ns
55 105 nC
25
27

µA

Ω

pF

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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2

Document Number: 73740

S-60620-Rev. A, 24-Apr-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

SiE806DF

Vishay Siliconix

)
(Ω ecnatsis

e
R-nO

–

)no(SD

r

100

80

)A( tnerruC niarD –I

60

40

D

20

0

0.0 0.1 0.2 0.3 0.4 0.5

– Drain-to-Source Voltage (V)

V

DS

VGS = 10 thru 3 V

VGS = 1 V

Output Characteristics

0.0022

0.0020

0.0018

0.0016

0.0014

0.0012

VGS = 4.5 V

VGS = 10 V

0 20406080100

VGS = 2 V

20

16

)A( tnerruC niarD –I

12

8

D

4

0

1.0 1.5 2.0 2.5 3.0

TC = 125 °C

TC = 25 °C

V

– Gate-to-Source Voltage (V)

GS

TC = - 55 °C

Transfer Characteristics

15000

C

iss

12000

)Fp( ecnati

9000

c
a
pa

C

6000

–
C

3000

C

rss

0

0 5 10 15 20 25 30

C

oss

– Drain Current (A)

I

D

On-Resistance vs. Drain Current and Gate Voltage

10

)V( e

g
atl

o
V ecruoS-ot-etaG

–

SG

V

ID = 20 A

8

6

4

2

0

0 30 60 90 120 150 180

VDS = 15 V

VDS = 24 V

Qg – Total Gate Charge (nC)

Gate Charge

Document Number: 73740
S-60620-Rev. A, 24-Apr-06

VDS – Drain-to-Source Voltage (V)

Capacitance

1.8

VGS = 4.5 V, 10 V

= 25 A

I

1.6

e
cn

1.4

a

t

)

sis

d
ezi

eR

l

-

a

1.2

nO

m
ro

–

N

)

(

n
o(SD

1.0

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

– Junction Temperature (°C)

T

J

D

On-Resistance vs. Junction Temperature

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3

SiE806DF

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

100

)A( tnerruC ecruoS –I

TJ = 150 °C

10

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

1.8

1.6

1.4

)
V(

)ht(

1.2

S
G

V

1.0

ID = 250 µA

TJ = 25 °C

0.0050

(Ω ecnatsiseR-nO ecruoS-ot-niarD –)

0.0045

0.0040

0.0035

0.0030

0.0025

0.0020

)no(SD

0.0015

r

0.0010
012345678 910

– Gate-to-Source Voltage (V)

V

GS

ID = 25 A

125 °C

25 °C

On-Resistance vs. Gate-to-Source Voltage

50

40

)W

30
(
rewoP

20

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

– Temperature (°C)

T

J

Threshold Voltage

100

*Limited

by r

DS(on)

10

)
A( t

ne
rr
uC

1

ni
ar

D
–

D

I

0.1

0.01

0.01

*V

GS

Safe Operating Area, Junction-to-Ambient

Single Pulse Power, Junction-to-Ambient

TA = 25 °C

Single Pulse

BVDSS

Limited

0.1 1 10

– Drain-to-Source Voltage (V)

V

DS

minimum VGS at which r

DS(on)

10

0

10 100010.10.01 100

Time (sec)

1 ms

10 ms

100 ms

1 s

10 s

DC

100

is specified

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4

Document Number: 73740

S-60620-Rev. A, 24-Apr-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

SiE806DF

Vishay Siliconix

250

200

)A( tnerruC niarD –

150

100

D

I

50

Package Limited

0

0 25 50 75 100 125 150

TC – Case Temperature (°C)

Current Derating*

* The power dissipation PD is based on T
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-

J(max)

140

120

)W( noitapissiD rewoP

100

80

60

40

20

0

25 50 75 100 125 150

– Case Temperature (°C)

T

C

Power Derating, Junction-to-Case

limit.

Document Number: 73740
S-60620-Rev. A, 24-Apr-06

www.vishay.com

5

SiE806DF

2

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

2

tneisnarT evitceffE dezilamroN

1

Duty Cycle = 0.5

ecnadepmI lamrehT

0.2

Notes:

P

DM

t

1

t

– TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

thJA

t
t

100

1

2

= 55°C/W

(t)

0.1

0.01

0.1

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

110 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

tneisnarT evitceffE

1

Duty Cycle = 0.5

ecnadepmI lamreh

0.2

0.1

d
ezi

lamr

T

0.1

0.05

oN

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

110

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)

t
n
eis

n
arT ev

i

tc
e

ffE

d
ezila

mr
oN

1

Duty Cycle = 0.5

ecn

0.1

0.2

0.1

0.05

Single Pulse

0.02

a
depmI

lamrehT

0.01

-4

10

-3

10

-2

10

-1

110

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Source

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73740.

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6

Document Number: 73740

S-60620-Rev. A, 24-Apr-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1