VISHAY SiE806DF Datasheet

SiE806DF

PRODUCT SUMMARY

VDS (V)

0.0017 at V

30

0.0021 at V

Package Drawing

r

DS(on)

D

e

(Ω)

= 10 V 202

GS

= 4.5 V 187

GS

678910 DSSGD

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

• TrenchFET® Gen II Power MOSFET

• Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

gd/Qgs

• 100 % R

APPLICATIONS

•VRM

• DC/DC Conversion: Low-Side

• Synchronous Rectification

Silicon

Limit

PolarPAK

67 8 9

ID (A) Qg (Typ)

Packag e

Limit

60

75 nC

10

DDSG

Vishay Siliconix

®

Package for

Ratio Helps Prevent Shoot-Through

and UIS Tested

g

D

RoHS

COMPLIANT

DSSGD 54321

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE806DF-T1-E3 (Lead (Pb)-free)

14325

For Related Documents

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol

Drain-Source Voltage V Gate-Source Voltage V

T

= 25 °C

C

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

T

C

DS

GS

I

D

TA = 25 °C TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C 80

C

= 25 °C

T

A

DM

I

S

I

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range

d, e

Soldering Recommendations (Peak Temperature)

Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

, T

J

stg

Document Number: 73740 S-60620-Rev. A, 24-Apr-06

Limit

30

± 12

202 (Silicon Limit)

a

60

(Package Limit)

a

60

b, c

41.3

b, c

33

100

a

60

b, c

4.3 50

125 mJ 125

b, c

5.2

b, c

3.3

- 50 to 150 260

Unit

V

A

W

°C

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SiE806DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top) Maximum Junction-to-Case (Source)

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package).

a, b

a, c

t ≤ 10 sec R

Steady State

R

thJA

(Drain) 0.8 1

R

thJC

(Source) 2.2 2.7

thJFC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔV

V

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage V Gate-Source Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time

DS

DS /TJ

GS(th) /TJ

GS(th)

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

V

DS

V

DS

V

DS

I

D

I

D

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 25 A

GS

= 4.5 V, ID = 25 A

V

GS

V

= 15 V, ID = 25 A

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

ID = 250 µA

, ID = 250 µA

GS

= 0 V, TJ = 55 °C

GS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 20 A

GS

= 4.5 V, ID = 20 A

GS

f = 1 MHz 0.9 1.35 Ω

= 4.5 V, Rg = 1 Ω

GEN

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 10 A

Typical Maximum

20 24

= ± 12 V

= 0 V

GS

= 10 V

GS

Unit

°C/W

30 V

29

- 5.1

mV/°C

0.6 1.3 2 V ± 100 nA

1

10

25 A

0.0014 0.0017

0.0017 0.0021 130 S

13000

1150

550 165 250

75 115 23

9.5

125 190 160 240

85 130 15 25 20 30 50 75 85 130 10 15

60

100

0.9 1.2 V 52 80 ns 55 105 nC 25 27

µA

Ω

pF

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73740

S-60620-Rev. A, 24-Apr-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

SiE806DF

Vishay Siliconix

) (Ω ecnatsis

e R-nO

–

)no(SD

r

100

80

)A( tnerruC niarD –I

60

40

D

20

0

0.0 0.1 0.2 0.3 0.4 0.5

– Drain-to-Source Voltage (V)

V

DS

VGS = 10 thru 3 V

VGS = 1 V

Output Characteristics

0.0022

0.0020

0.0018

0.0016

0.0014

0.0012

VGS = 4.5 V

VGS = 10 V

0 20406080100

VGS = 2 V

20

16

)A( tnerruC niarD –I

12

8

D

4

0

1.0 1.5 2.0 2.5 3.0

TC = 125 °C

TC = 25 °C

V

– Gate-to-Source Voltage (V)

GS

TC = - 55 °C

Transfer Characteristics

15000

C

iss

12000

)Fp( ecnati

9000

c a pa

C

6000

– C

3000

C

rss

0

0 5 10 15 20 25 30

C

oss

– Drain Current (A)

I

D

On-Resistance vs. Drain Current and Gate Voltage

10

)V( e

g atl

o V ecruoS-ot-etaG

–

SG

V

ID = 20 A

8

6

4

2

0

0 30 60 90 120 150 180

VDS = 15 V

VDS = 24 V

Qg – Total Gate Charge (nC)

Gate Charge

Document Number: 73740 S-60620-Rev. A, 24-Apr-06

VDS – Drain-to-Source Voltage (V)

Capacitance

1.8

VGS = 4.5 V, 10 V

= 25 A

I

1.6

e cn

1.4

a

t

)

sis

d ezi

eR

l

-

a

1.2

nO

m ro

–

N

)

(

n o(SD

1.0

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

– Junction Temperature (°C)

T

J

D

On-Resistance vs. Junction Temperature

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