Vishay Si8401DB Schematic [ru]

P-Channel 20-V (D-S) MOSFET

20

Conti

t (TJ = 150_C)

a

I

A

b

C/W

Si8401DB

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS

−

−

DS(on)

0.065 @ VGS = −4.5 V

0.095 @ VGS = −2.5 V −4.1

(W) I

D

−4.9

(A)

FEATURES

D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging

Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area

D Pin Compatible to Industry Standard Si3443DV

APPLICATIONS

D PA, Battery and Load Switch
D Battery Charger Switch

MICRO FOOT

Bump Side View Backside View

32

DD

8401

xxx

S

41

G

Device Marking: 8401

Ordering Information: Si8401DB-T1

D PA Switch

xxx = Date/Lot Traceability Code

Si8401DB-T1—E1 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

Package Reflow Conditions

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

VPR 215/245

IR/Convection 220/250

P

DM

I

DS

GS

D

S

D

stg

−4.9

−3.9 −2.8

−2.5 −2.5

2.77 1.47

1.77 0.94

−20

"12

−10

−55 to 150 _C

c

c

S

G

D

P-Channel MOSFET

−3.6

_

_C

V

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
c. Package reflow conditions for lead-free.

Document Number: 71674
S-50066—Rev. G, 17-Jan-05

a

t v 5 sec

Steady State

R

thJA

thJF

35 45

72 85

16 20

_C/W

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1

Si8401DB

DS

,

GS

,

D

VDD = −10 V, RL = 10 W

ns

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Reverse Recovery Charge Q

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

r

f

rr

rr

VDS = VGS, I

= −250 mA −0.45 −0.9 1.4 V

D

VDS = 0 V, VGS = "12 V "100 nA

VDS = −20 V, VGS = 0 V −1

VDS = −20 V, VGS = 0 V, TJ = 70_C −5

VDS v −5 V, VGS = −4.5 V −5 A

VGS = −4.5 V, ID = −1 A 0.057 0.065

VGS = −2.5 V, ID = −1 A 0.080 0.095

VDS = −10 V, ID = −1 A

6 S

IS = −1 A, VGS = 0 V −0.73 −1.1 V

11 17

V

= −10 V, VGS = −4.5 V, ID = −1 A 2.1 nC

DS

2.9

17 25

VDD = −10 V, RL = 10 W

ID ^ −1 A, V

GEN

= −4.5 V, RG = 6 W

28 45

88 135

60 90

IF = −1 A, di/dt = 100 A/ms

40 60

20 30 nC

mA

W

ns

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10

8

6

4

− Drain Current (A)I

D

2

0

0246810

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2

Output Characteristics Transfer Characteristics

VGS = 5 thru 2.5 V

2 V

1.5 V

VDS − Drain-to-Source Voltage (V)

10

8

6

4

− Drain Current (A)I

D

2

TC = 125_C

25_C

−55_C

0

0.0 0.5 1.0 1.5 2.0 2.5

VGS − Gate-to-Source Voltage (V)

Document Number: 71674

S-50066—Rev. G, 17-Jan-05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si8401DB

Vishay Siliconix

W )

− On-Resistance (r

DS(on)

0.15

On-Resistance vs. Drain Current

0.12

VGS = 2.5 V

0.09

0.06

0.03

0.00
01234567

ID − Drain Current (A)

10

VDS = 10 V
I

= 1 A

D

8

6

Gate Charge

VGS = 4.5 V

1500

1200

900

600

C − Capacitance (pF)

300

C

0

1.6

1.4

1.2

rss

048121620

V

On-Resistance vs. Junction Temperature

VGS = 4.5 V
I

= 1 A

D

Capacitance

C

iss

C

oss

− Drain-to-Source Voltage (V)

DS

− Gate-to-Source Voltage (V)

GS

V

− Source Current (A)I

S

0.1

4

2

0

048121620

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

10

TJ = 150_C

1

TJ = 25_C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V)

1.0

− On-Resiistance
(Normalized)

DS(on)

r

0.8

0.6

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

0.30

0.24

W )

0.18

0.12

− On-Resistance (r

0.06

DS(on)

0.00
0123456

VGS − Gate-to-Source Voltage (V)

ID = 1 A

Document Number: 71674
S-50066—Rev. G, 17-Jan-05

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