VISHAY Si7991DP Technical data

30

Conti

t (TJ = 150_C)

a

I

A

C/W

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Si7991DP

PRODUCT SUMMARY

V

(V) r

DS

−

−

6.15 mm

D1

8

D1

7

6

DS(on)

0.023 @ VGS = −10 V

0.035 @ VGS = −4.5 V −8.1

PowerPAK SO-8

D2

D2

5

Bottom View

New Product

Dual P-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

(W) I

S1

1

5.15 mm

G1

2

S2

3

G2

4

Ordering Information: Si7991DP-T1

(A)

D

−10.2

D New Low Thermal Resistance PowerPAKr Package

with Low 1.07-mm Profile

APPLICATIONS

D Load Switch

− Notebook PCs

− Desktop PCs

− Game Stations

D Battery Switch

S

1

G

1

P-Channel MOSFET

D

1

G

2

Vishay Siliconix

S

2

D

2

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

GS

DS

D

S

D

stg

−10.2

−8.2 −5.3

−2.9 −1.2

3.5 1.4

2.2 0.9

−30

"20

−30

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady State

R

thJA

thJC

28 35

60 85

3 3.7

V

−6.6

W

_C/W

Document Number: 72515
S-32127—Rev. B, 27-Oct-03

www.vishay.com

1

Si7991DP

VDD = −15 V, RL = 15 W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

gs

gd

r

f

rr

g

g

VDS = VGS, I

VDS = 0 V, VGS = "20 V "100 nA

VDS = −30 V, VGS = 0 V −1

VDS = −30 V, VGS = 0 V, TJ = 55_C −5

VDS v −5 V, VGS = −10 V −30 A

VGS = −10 V, ID = −10.0 A 0.019 0.023

VGS = −4.5 V, ID = −8.2 A 0.027 0.035

VDS = −15 V, ID = −10.0 A

IS = −2.9 A, VGS = 0 V −0.8 −1.2 V

V

= −15 V, VGS = −10 V, ID = −10.0 A 6.3 nC

DS

VDD = −15 V, RL = 15 W

ID ^ −1 A, V

IF = −2.9 A, di/dt = 100 A/ms 45 70

= −250 mA −1 −3 V

D

f = 1 MHz 10 W

= −10 V, RG = 6 W

GEN

22 S

38 57

9.7

10 15

15 25

130 200

70 105

mA

W

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

30

24

18

12

− Drain Current (A)I

D

6

0

012345

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2

Output Characteristics Transfer Characteristics

VGS = 10 thru 4 V

3 V

VDS − Drain-to-Source Voltage (V)

30

24

18

12

− Drain Current (A)I

D

6

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS − Gate-to-Source Voltage (V)

TC = 125_C

25_C

Document Number: 72515

S-32127—Rev. B, 27-Oct-03

−55_C