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Si7900EDN
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V
(V) r
DS
20
3.30 mm 3.30 mm
D
8
D
7
6
DS(on)
0.026 @ VGS = 4.5 V 9
0.031 @ VGS = 2.5 V 8
0.039 @ VGS = 1.8 V 7
PowerPAKt 1212-8
D
D
5
Bottom View
(W) I
S1
1
G1
2
S2
3
G2
4
New Product
(A)
D
2.4 kW
G
1
N-Channel N-Channel
Vishay Siliconix
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakt Package
– Low-Thermal Resistance, R
– Low 1.07-mm Profile
D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion Batteries
D
G
2
S
1
2.4 kW
thJC
D
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C 9 6
TA = 85_C
TA = 25_C 3.2 1.5
TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
6.4 4.3
2.9 1.4
1.7 0.79
20
"12
30
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Case Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 10 sec 30 38
Steady State
R
thJA
thJC
65 82
1.9 2.4
V
A
W
_C/W
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
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1
Si7900EDN
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
DS(on)
g
V
fs
SD
VDS = VGS, I
= 250 mA 0.40 V
D
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V 1
VDS = 16 V, VGS = 0 V, TJ = 85_C 20
VDS = 5 V, VGS = 4.5 V 20 A
VGS = 4.5 V, ID = 6.5 A 0.021 0.026
VGS = 2.5 V, I
VGS = 1.8 V, I
= 5.8 A
D
= 5.0 A
D
VDS = 10 V, ID = 6.5 A 25 S
IS = 1.5 A, VGS = 0 V 0.65 1.1 V
"1 mA
"10 mA
0.025 0.031
0.031 0.039
mA
W
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
d(on)
d(off)
g
V
gs
gd
r
f
= 10 V, VGS = 4.5 V, ID = 6.5 A 2.7 nC
DS
VDD = 10 V, RL = 10 W
VDD = 10 V, RL = 10
ID ^ 1 A, V
= 4.5 V, RG = 6 W
GEN
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
6
4
– Gate Current (mA)I
GSS
2
mA)
– Gate Current (I
GSS
10,000
1,000
100
0.1
12.5 18
2.7
0.7 1.0
1.3 2.0
5.5 8.0
ms
4.6 7.0
Gate Current vs. Gate-Source V oltage
TJ = 150_C
10
1
TJ = 25_C
0
0 3 6 9 12 15 18
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2
VGS – Gate-to-Source Voltage (V)
0.01
V
– Gate-to-Source Voltage (V)
GS
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
150 36912
Si7900EDN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
– Drain Current (A)I
D
6
0
024681012
0.06
Output Characteristics Transfer Characteristics
VGS = 5 thru 2 V
1.5 V
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Vishay Siliconix
30
TC = –55_C
24
18
12
– Drain Current (A)I
D
6
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS – Gate-to-Source Voltage (V)
2500
25_C
Capacitance
125_C
0.05
W )
0.04
0.03
– On-Resistance (r
0.02
DS(on)
0.01
0.00
– Gate-to-Source Voltage (V)
GS
V
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0 6 12 18 24 30
ID – Drain Current (A)
Gate Charge
5
VDS = 10 V
I
= 9 A
D
4
3
2
1
2000
1500
1000
C – Capacitance (pF)
500
0
048121620
1.8
1.6
W)
1.4
1.2
(Normalized)
– On-Resistance (r
1.0
DS(on)
0.8
C
iss
C
oss
C
rss
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
VGS = 4.5 V
I
= 9 A
D
0
0 3 6 9 12 15
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
Qg – Total Gate Charge (nC)
0.6
–50 –25 0 25 50 75 100 125 150
T
– Junction Temperature (_C)
J
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Si7900EDN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
10
– Source Current (A)I
S
0.4
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C
TJ = 25_C
1
0 0.4 0.6 0.8
1.0 1.2
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Threshold Voltage
W )
– On-Resistance (r
DS(on)
0.08
0.06
ID = 9 A
0.04
0.02
0.00
0123456
Single Pulse Power, Junction-to-Ambient
80
0.2
–0.0
Variance (V)V
–0.2
GS(th)
–0.4
–0.6
–50 –25 0 25 50 75 100 125 150
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–4
ID = 250 mA
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
–3
10
60
40
Power (W)
20
0
0.1 1010.010.001
Time (sec)
Notes:
P
DM
t
1
t
2
t
thJA
t
thJA
100
1
2
= 65_C/W
(t)
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM – TA = PDMZ
4. Surface Mounted
–2
10
–1
1 10 60010
Square Wave Pulse Duration (sec)
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Document Number: 71425
S-03369—Rev. A, 02-Apr-01
Si7900EDN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Thermal Impedance
Normalized Effective Transient
0.05
0.02
Single Pulse
0.01
0.0001 0.001 0.1 10.010.00001
Square Wave Pulse Duration (sec)
Vishay Siliconix
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
www.vishay.com
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