VISHAY Si7900EDN Technical data

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Si7900EDN

Dual N-Channel 20-V (D-S) MOSFET, Common Drain

PRODUCT SUMMARY

V

(V) r

DS

20

3.30 mm 3.30 mm

D

8

D

7

6

DS(on)

0.026 @ VGS = 4.5 V 9

0.031 @ VGS = 2.5 V 8

0.039 @ VGS = 1.8 V 7

PowerPAKt 1212-8

D

D

5

Bottom View

(W) I

S1

1

G1

2

S2

3

G2

4

New Product

(A)

D

2.4 kW

G

1

N-Channel N-Channel

Vishay Siliconix

FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakt Package

– Low-Thermal Resistance, R
– Low 1.07-mm Profile

D 3000-V ESD Protection

APPLICATIONS

D Protection Switch for 1-2 Li-ion Batteries

D

G

2

S

1

2.4 kW

thJC

D

S

2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C 9 6
TA = 85_C

TA = 25_C 3.2 1.5
TA = 85_C

P

I

DM

I

DS
GS

D

S

D

stg

6.4 4.3

2.9 1.4

1.7 0.79

20

"12

30

–55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Case Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec 30 38

Steady State

R

thJA

thJC

65 82

1.9 2.4

V

A

W

_C/W

Document Number: 71425
S-03369—Rev. A, 02-Apr-01

www.vishay.com

1

Si7900EDN

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance
Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

DS(on)

g

V

fs

SD

VDS = VGS, I

= 250 mA 0.40 V

D

VDS = 0 V, VGS = "4.5 V

VDS = 0 V, VGS = "12 V

VDS = 16 V, VGS = 0 V 1

VDS = 16 V, VGS = 0 V, TJ = 85_C 20

VDS = 5 V, VGS = 4.5 V 20 A
VGS = 4.5 V, ID = 6.5 A 0.021 0.026

VGS = 2.5 V, I
VGS = 1.8 V, I

= 5.8 A

D

= 5.0 A

D

VDS = 10 V, ID = 6.5 A 25 S

IS = 1.5 A, VGS = 0 V 0.65 1.1 V

"1 mA

"10 mA

0.025 0.031

0.031 0.039

mA

W

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

d(on)

d(off)

g

V

gs
gd

r

f

= 10 V, VGS = 4.5 V, ID = 6.5 A 2.7 nC

DS

VDD = 10 V, RL = 10 W

VDD = 10 V, RL = 10

ID ^ 1 A, V

= 4.5 V, RG = 6 W

GEN

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Gate-Current vs. Gate-Source Voltage

8

6

4

– Gate Current (mA)I

GSS

2

mA)

– Gate Current (I

GSS

10,000

1,000

100

0.1

12.5 18

2.7

0.7 1.0

1.3 2.0

5.5 8.0

ms

4.6 7.0

Gate Current vs. Gate-Source V oltage

TJ = 150_C

10

1

TJ = 25_C

0

0 3 6 9 12 15 18

www.vishay.com

2

VGS – Gate-to-Source Voltage (V)

0.01

V

– Gate-to-Source Voltage (V)

GS

Document Number: 71425

S-03369—Rev. A, 02-Apr-01

150 36912