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Si7414DN
PRODUCT SUMMARY
V
(V) r
DS
60
3.30 mm
D
8
D
7
DS(on)
0.025 @ VGS = 10 V 8.7
0.036 @ VGS = 4.5 V 7.3
PowerPAKt 1212-8
D
6
D
5
Bottom View
New Product
N-Channel 60-V (D-S) MOSFET
FEATURES
(W) I
S
1
3.30 mm
S
2
S
3
G
4
(A)
D
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
D PowerPAKt 1212-8 Package with Low
1.07-mm Profile
D PWM Optimized
APPLICATIONS
D Primary Side Switch
D Synchronous Rectifier
D Motor Drives
G
N-Channel MOSFET
Vishay Siliconix
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Source Current (Diode Conduction)
Single Avalanche Current I
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C 8.7 5.6
TA = 70_C
L = 0.1 mH
TA = 25_C 3.8 1.5
TA = 70_C
E
P
I
DM
I
AS
DS
GS
AS
D
S
D
stg
7.0 4.4
3.2 1.3
2.0 0.8
60
"20
30
19
18 mJ
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 10 sec 26 33
Steady State
R
thJA
thJC
65 81
1.9 2.4
V
A
W
_C/W
Document Number: 71738
S-04764—Rev. A, 08-Oct-01
www.vishay.com
1
Si7414DN
W
W
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.
300 ms, duty cycle v 2%.
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
G
r
f
rr
VDS = VGS, I
= 250 mA 1 V
D
VDS = 0 V, VGS = "20 V
VDS = 48 V, VGS = 0 V 1
VDS = 48 V, VGS = 0 V, TJ = 55_C 5
VDS w 5 V, V
V
= 10 V, I
GS
= 10 V
GS
= 8.7 A
D
VGS = 4.5 V, ID = 7.3 A 0.030 0.036
VDS = 15 V, ID = 8.7 A 18 S
IS = 3.2 A, VGS = 0 V 0.75 1.2 V
V
= 30 V, VGS = 10 V, ID = 8.7 A 2.7 nC
DS
VDD = 30 V, RL = 30 W
VDD = 30 V, RL = 30
ID ^ 1 A, V
= 10 V, RG = 6 W
GEN
IF = 3.2 A, di/dt = 100 A/ms 45 90
"100 nA
30 A
0.021 0.025
16 25
4.4
1.0 W
15 25
12 20
30 50
12 20
mA
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
VGS = 10 thru 5 V
24
4 V
18
12
– Drain Current (A)I
D
6
3 V
0
012345
VDS – Drain-to-Source Voltage (V)
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2
Output Characteristics Transfer Characteristics
30
25
20
15
10
– Drain Current (A)I
D
5
TC = 125_C
25_C
–55_C
0
012345
VGS – Gate-to-Source Voltage (V)
Document Number: 71738
S-04764—Rev. A, 08-Oct-01
Si7414DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0 5 10 15 20 25 30
ID – Drain Current (A)
Gate Charge
VDS = 30 V
I
= 8.7 A
D
C – Capacitance (pF)
W)
W )
– On-Resistance (r
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
8
Vishay Siliconix
1200
1000
800
600
400
200
0
2.0
1.8
1.6
C
0 102030405060
V
On-Resistance vs. Junction Temperature
VGS = 10 V
I
= 8.7 A
D
Capacitance
C
iss
oss
C
rss
– Drain-to-Source Voltage (V)
DS
– Gate-to-Source Voltage (V)
GS
V
– Source Current (A)I
S
6
4
2
0
0 4 8 12 16
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30
TJ = 150_C
10
TJ = 25_C
(Normalized)
– On-Resistance (r
DS(on)
W )
– On-Resistance (r
DS(on)
1.4
1.2
1.0
0.8
0.6
–50 –25 0 25 50 75 100 125 150
T
– Junction Temperature (_C)
J
0.08
0.06
0.04
0.02
ID = 8.7 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD – Source-to-Drain Voltage (V)
Document Number: 71738
S-04764—Rev. A, 08-Oct-01
0.00
0246810
VGS – Gate-to-Source Voltage (V)
www.vishay.com
3
Si7414DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.4
0.2
–0.0
–0.2
Variance (V)V
GS(th)
–0.4
–0.6
–0.8
–50 –25 0 25 50 75 100 125 150
2
Threshold Voltage
ID = 250 mA
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
50
40
30
Power (W)
20
10
0
0.01
Single Pul s e P o w e r, Juncion-To-Ambient
0.1
1
Time (sec)
10 100
600
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
2
1
0.1
Thermal Impedance
Normalized Effective Transient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
–4
Duty Cycle = 0.5
0.2
0.1
0.02
–3
10
Single Pulse
0.05
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM – TA = PDMZ
4. Surface Mounted
–2
10
–1
1 10 60010
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
P
DM
t
1
t
2
t
1
t
2
= 65_C/W
thJA
(t)
thJA
100
0.01
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4
–4
10
–3
10
–2
10
–1
110
Square Wave Pulse Duration (sec)
Document Number: 71738
S-04764—Rev. A, 08-Oct-01
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