Vishay Si7403DN Schematic [ru]
Si7403DN
C/W
PRODUCT SUMMARY
V
(V) r
DS
–20
3.30 mm
D
8
D
7
DS(on)
0.1 @ VGS = –4.5 V
0.135 @ VGS = –2.5 V –3.8
PowerPAKt 1212-8
D
6
D
5
New Product
P-Channel 20-V (D-S) MOSFET
FEATURES
(W) I
S
1
3.30 mm
S
2
S
3
G
4
D
–4.5
(A)
D TrenchFETr Power MOSFETS: 2.5-V Rated
D New PowerPAKt Package
– Low Thermal Resistance, R
– Low 1.07-mm Profile
APPLICATIONS
D Load Switching
D PA Switching
P-Channel MOSFET
Vishay Siliconix
thJC
SDDS S
G
Bottom View
DD
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
TA = 25_C 3.5 1.5
TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
–4.5
–3.2 –2.1
–3.0 –1.3
1.9 0.8
–20
"8
–20
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Case Steady State R
a
t v 10 sec 28 35
Steady State
R
thJA
thJC
65 81
4.5 5.6
V
–2.9
A
W
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71431
S-03390—Rev. A, 02-Apr-01
www.vishay.com
1
Si7403DN
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
b
a
a
a
a
I
r
DS(on)
GS(th)
GSS
DSS
D(on)
g
fs
V
SD
g
gs
gd
d(on)
r
d(off)
f
rr
VDS = VGS, I
VDS = 0 V, VGS = "4.5 V
VDS = –20 V, VGS = 0 V –1
VDS = –20 V, VGS = 0 V, TJ = 70_C –5
VDS = –5 V, VGS = –4.5 V –10
VDS = –5 V, VGS = –2.5 V –4
VGS = –4.5 V, ID = –3.3 A 0.078 0.1
VGS = –2.5 V, ID = –2.9 A 0.110 0.135
VDS = –10 V, ID = –3.3 A 8.8 S
IS = –1.6 A, VGS = 0 V 0.8 –1.2 V
V
= –10 V, VGS = –4.5 V, ID = –4.5 A 1.5 nC
DS
VDD = –10 V, RL = 10 W
VDD = –10 V, RL = 10
ID ^ –1.6 A, V
IF = –1.6 A, di/dt = 100 A/ms 50 80
= –250 mA –0.45 V
D
= –4.5 V, RG = 6 W
GEN
"100 nA
8.6 14
3.1
27 50
17 30
52 80
45 70
mA
A
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
16
12
8
– Drain Current (A)I
D
4
0
012345
Output Characteristics Transfer Characteristics
VGS = 4.5, 4, 3.5 V
3 V
2.5 V
2 V
1.5 V
VDS – Drain-to-Source Voltage (V)
20
TC = –55_C
16
125_C
12
8
– Drain Current (A)I
D
4
0
01234
VGS – Gate-to-Source Voltage (V)
25_C
www.vishay.com
2
Document Number: 71431
S-03390—Rev. A, 02-Apr-01
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