Vishay Si5447DC Schematic

P-Channel 20-V (D-S) MOSFET

T

Si5447DC

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.076 at V

- 20

0.110 at V

0.160 at V

1206-8 ChipFET

D

Ordering Information: Si5447DC-T1-E3 (Lead (Pb)-free) Si5447DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

Bottom View

D

S

(Ω)I

DS(on)

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

®

1

G

Marking Code

BG XX

Part # Code

Lot Traceability and Date Code

(A)

D

- 4.8

- 4.0

- 3.3

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

®

Power MOSFETs: 1.8 V Rated

S

G

D

P-Channel MOSFE

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

b, c

TA = 25 °C

= 85 °C

T

A

TA = 25 °C

= 85 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 4.8 - 3.5

- 3.5 - 2.5

- 2.1 - 1.1

- 20

± 8

- 15

2.5 1.3

1.3 0.7

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board.

t ≤ 5 s

Steady State 83 95

R

thJA

R

thJF

b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71256 S09-0129-Rev. C, 02-Feb-09

43 50

°C/W

14 20

www.vishay.com

1

Si5447DC

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

DS

I

D

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 16 V, V

DS

= - 16 V, V

DS

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 3.5 A

GS

V

= - 2.5 V, ID = - 2.9 A

GS

V

= - 1.8 V, ID = - 1 A

GS

= 0 V

GS

= 0 V, TJ = 85 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 3.5 A

IS = - 1.1 A, V

= - 10 V, V

V

= - 10 V, RL = 10 Ω

DD

≅ - 1 A, V

GEN

GS

= 0 V

GS

= - 4.5 V, ID = - 3.5 A

= - 4.5 V, RG = 6 Ω

IF = - 1.1 A, dI/dt = 100 A/µs

- 0.45 V

± 100 nA

- 1

- 5

- 15 A

0.064 0.076

0.091 0.110

0.130 0.160

9S

- 0.8 - 1.2 V

6.5 10

1.4

1.3

14 21

29 45

42 65

35 55

30 60

µA

Ω

nCGate-Source Charge

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

15

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

www.vishay.com 2

V

DS

VGS=5thru3V

2.5 V

2V

1.5 V

1V

- Drain-to-Source Voltage (V)

Output Characteristics

15

TC= - 55 °C

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS- Gate-to-Source Voltage (V)

25 °C

Transfer Characteristics

Document Number: 71256

S09-0129-Rev. C, 02-Feb-09

125 °C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.30

0.25

0.20

0.15

- On-Resistance (Ω)R

0.10

DS(on)

0.05

0.00 03691215

On-Resistance vs. Drain Current

VGS= 1.8 V

VGS= 2.5 V

- Drain Current (A)

I

D

VGS=4.5V

C - Capacitance (pF)

Si5447DC

Vishay Siliconix

1200

1000

C

iss

800

600

400

C

200

C

rss

0

0 4 8 121620

oss

- Drain-to-Source Voltage (V)

V

DS

Capacitance

5

VDS=10V I

=3.5A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

02468

Qg- Total Gate Charge (nC)

Gate Charge

20

TJ= 150 °C

10

- Source Current (A)I

S

TJ=25°C

1.6

VGS=4.5V I

=3.5A

D

1.4

1.2

- On-ResistanceR

1.0

(Normalized)

DS(on)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

0.30

0.25

0.20

0.15

- On-Resistance (Ω)R

0.10

DS(on)

0.05

ID=3.5A

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD- Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

Document Number: 71256 S09-0129-Rev. C, 02-Feb-09

0.00 012345

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

www.vishay.com

3

Vishay Si5447DC Schematic [ru]