VISHAY Si4980DY Technical data
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PRODUCT SUMMARY
Si4980DY
Vishay Siliconix
Dual N-Channel 80-V (D-S) MOSFET
V
(V) r
DS
80
0.075 @ VGS = 10 V 3.7
0.095 @ VGS = 6.0 V 3.2
(W) I
DS(on)
(A)
D
D
SO-8
S
1
1
G
2
1
S
3
2
G
4
2
Top View
Ordering Information: Si4980DY
Si4980DY-T1 (with Tape and Reel)
D
1
8
D
7
1
D
6
2
D
5
2
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70646
S-03950—Rev. D, 26-May-03
a
DS
GS
I
D
DM
I
S
P
D
stg
R
thJA
80
"20
3.7
2.9
30
1.7
2.0
1.3
-55 to 150 _C
62.5 _C/W
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V
A
W
2-1
Si4980DY
VDD = 40 V, RL = 40 W
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Curren
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
fs
SD
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
gs
gd
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test; pulse width v
b. For design aid only; not subject to production testing.
300 ms, duty cycle v 2%.
d(on)
r
d(off)
f
rr
VDS = VGS, I
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55_C
= 250 mA 2 V
D
"100 nA
1
20
mA
VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 3.7 A 0.062 0.075
VGS = 6.0 V, ID = 3.2 A 0.071 0.095
W
VDS = 15 V, ID = 3.7 A 12 S
IS = 1.7 A, VGS = 0 V 1.2 V
g
V
= 40 V, VGS = 10 V, ID = 3.7 A 4 nC
DS
15 30
3.2
g
1 5.1 W
10 20
VDD = 40 V, RL = 40 W
ID ^ 1 A, V
GEN
= 10 V, RG = 6 W
10 20
30 60
ns
10 20
IF = 1.7 A, di/dt = 100 A/ms 75 110
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2-2
Document Number: 70646
S-03950—Rev. D, 26-May-03
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