VISHAY Si4852DY Technical data

Si4852DY

)

Continuous Drain Current (TJ = 150 C)

C/W

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

V

(V) r

DS

30

0.0120 @ VGS = 10 V 11

0.0175 @ VGS = 4.5 V 9.5

(W) I

DS(on)

(A)

D

FEATURES

D LITTLE FOOTr Plus
D 100% R

Tested

g

SCHOTTKY PRODUCT SUMMARY

SO-8

Top View

VSD (v)

8

7

6

5

I

(A)

F

D

D

D

G

S

N-Channel MOSFET

Schottky Diode

V

(V)

DS

30 0.53 V @ 3 A 4

SD

S

SD

G

Ordering Information: Si4852DY

Diode Forward Voltage

1

2

3

4

Si4852DY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage (MOSFET) V

Reverse Voltage (Schottky) V

Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C
(MOSFET)

Pulsed Drain Current (MOSFET) I

Continuous Source Current (MOSFET Diode Conduction)

Average Foward Current (Schottky) I

Pulsed Foward Current (Schottky) I

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range TJ, T

a

a

a

TA = 25_C

TA = 70_C

a

TA = 25_C 2.5 1.47

TA = 70_C

TA = 25_C

TA = 70_C 1.45 0.88

P

I

DM

I

FM

DS

DA

GS

D

S

F

D

stg

11 8.7

9.0 7.0

2.3 1.3

4.0 2.5

1.6 0.94

2.27 1.38

30

30

"20

50

50

-55 to 150 _C

V

A

W

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady-State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71307
S-31726—Rev. D, 18-Aug-03

Parameter Symbol

a

t v 10 sec

Steady-State

MOSFET Schottky

Typ Max Typ Max

R

thJA

thJF

40 50 45 55

72 85 75 90

18 22 20 25

Unit

_C/W

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1

Si4852DY

g

DSS

b

b

DS

,

GS

,

D

VDD = 15 V, RL = 15 W

g

rm

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).

Parameter Symbol Test Condition Min TypaMax Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

b

Schottky Diode Forward Voltage

Dynamic

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v

300 ms, duty cycle v 2%.

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

g

r

f

rr

VDS = VGS, I

VDS = 0 V, V

= 250 mA 1 V

D

= "20 V "100 nA

GS

VDS = 24 V, VGS = 0 V 0.007 0.100

VDS = 24 V, VGS = 0 V, TJ = 100_C 1.5 10

VDS = 24 V, VGS = 0 V, TJ = 125_C 6.5 20

V

5 V, VGS = 10 V 20 A

w

DS

VGS = 10 V, ID = 11 A 0.0100 0.0120

VGS = 4.5 V, ID = 9.5 A 0.0145 0.0175

VDS = 15 V, ID = 11 A 28 S

IS = 3.0 A, VGS = 0 V 0.485 0.53

IS = 3.0 A, VGS = 0 V, TJ = 125_C 0.416 0.47

V

= 15 V, VGS = 5 V, ID = 11 A

DS

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

= 10 V, RG = 6 W

GEN

IF = 3.o A, di/dt = 100 A/ms 40 70

24 35

9

7.5

0.5 2.6 W

17 30

10 20

60 100

18 30

mA

W

V

nC

ns

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Forward Voltage Drop V

Maximum Reverse Leakage Current I

Junction Capacitance C

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2

F

rm

T

IF = 3.0 A 0.485 0.53

IF = 3.0 A, TJ = 125_C 0.416 0.47

Vr = 24 V 0.007 0.100

Vr = 24 V, TJ = 100_C 1.5 10

Vr = -24 V, TJ = 125_C 6.4 20

Vr = 10 V

V

mA

115 pF

Document Number: 71307

S-31726—Rev. D, 18-Aug-03