VISHAY Si4850EY Technical data

60

C/W

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N-Channel Reduced Qg, Fast Switching MOSFET

PRODUCT SUMMARY

Si4850EY

Vishay Siliconix

V

(V) r

DS

0.022 @ VGS = 10 V 8.5

0.031 @ VGS = 4.5 V 7.2

(W) I

DS(on)

(A)

D

D

SO-8

SD

1

SD

2

SD

3

GD

4

Top View

Ordering Information: Si4850EY

Si4850EY—E3 (Lead Free)
Si4850EY-T1 (with Tape and Reel)
Si4850EY-T1—E3 (Lead Free with Tape and Reel)

8

7

6

5

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

Continuous Drain Current (TJ = 175_C)

Pulsed Drain Current I

Avalanche Current I

Repetitive Avalanche Energy E

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

I

DM

AS

DS

GS

AS

D

D

stg

8.5 6.0

7.1 5.0

3.3 1.7

2.3 1.2

60

"20

40

15

11 mJ

−55 to 175 _C

V

A

W

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71146
S-40572—Rev. D, 29-Mar-04

Parameter Symbol Typical Maximum Unit

a

t v 10 sec

Steady State

R

thJA

thJF

36 45

75 90

17 20

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1

Si4850EY

V

Drain-S

a

W

VDD = 30 V, RL = 30 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

ource On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

-

a

a

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

V

SD

g

gs

gd

g

d(on)

r

d(off)

f

rr

VGS = 0 V, I

VDS = VGS, I

VDS = 0 V, VGS = "20 V

= 250 mA 60

D

= 250 mA 1

D

"100 nA

VDS = 60 V, VGS = 0 V 1

VDS = 60 V, VGS = 0 V, TJ = 55_C 20

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 6.0 A

VGS = 10 V, ID = 6.0 A, TJ = 125_C

VGS = 10 V, ID = 6.0 A, TJ = 175_C

40 A

0.018 0.022

0.031 0.037

0.039 0.047

VGS = 4.5 V, ID = 5.1 A 0.025 0.031

VDS = 15 V, ID = 6.0 A 25 S

IS = 1.7 A, VGS = 0 V 0.8 1.2 V

18 27

V

= 30 V, VGS = 10 V, ID = 6.0 A 3.4 nC

DS

5.3

VGS =0.1 V, f = 5 MHz

0.5 1.4 2.4 W

10 20

VDD = 30 V, RL = 30 W

ID ^ 1 A, V

GEN

= 10 V, Rg = 6 W

10 20

25 50

12 24

IF = 1.7 A, di/dt = 100 A/ms 50 80

mA

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

40

32

24

16

− Drain Current (A)I

D

8

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

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2

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

4 V

3 V

VDS − Drain-to-Source Voltage (V)

40

32

24

16

− Drain Current (A)I

D

8

TC = 150_C

25_C

−55_C

0

012345

VGS − Gate-to-Source Voltage (V)

Document Number: 71146

S-40572—Rev. D, 29-Mar-04