60
C/W
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N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
Si4850EY
Vishay Siliconix
V
(V) r
DS
0.022 @ VGS = 10 V 8.5
0.031 @ VGS = 4.5 V 7.2
(W) I
DS(on)
(A)
D
D
SO-8
SD
1
SD
2
SD
3
GD
4
Top View
Ordering Information: Si4850EY
Si4850EY—E3 (Lead Free)
Si4850EY-T1 (with Tape and Reel)
Si4850EY-T1—E3 (Lead Free with Tape and Reel)
8
7
6
5
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current I
Avalanche Current I
Repetitive Avalanche Energy E
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
P
I
DM
AS
DS
GS
AS
D
D
stg
8.5 6.0
7.1 5.0
3.3 1.7
2.3 1.2
60
"20
40
15
11 mJ
−55 to 175 _C
V
A
W
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
Parameter Symbol Typical Maximum Unit
a
t v 10 sec
Steady State
R
thJA
thJF
36 45
75 90
17 20
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_C/W
1
Si4850EY
V
Drain-S
a
W
VDD = 30 V, RL = 30 W
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
-
ource On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
-
a
a
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.
300 ms, duty cycle v 2%.
(BR)DSS
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
g
gs
gd
g
d(on)
r
d(off)
f
rr
VGS = 0 V, I
VDS = VGS, I
VDS = 0 V, VGS = "20 V
= 250 mA 60
D
= 250 mA 1
D
"100 nA
VDS = 60 V, VGS = 0 V 1
VDS = 60 V, VGS = 0 V, TJ = 55_C 20
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 6.0 A
VGS = 10 V, ID = 6.0 A, TJ = 125_C
VGS = 10 V, ID = 6.0 A, TJ = 175_C
40 A
0.018 0.022
0.031 0.037
0.039 0.047
VGS = 4.5 V, ID = 5.1 A 0.025 0.031
VDS = 15 V, ID = 6.0 A 25 S
IS = 1.7 A, VGS = 0 V 0.8 1.2 V
18 27
V
= 30 V, VGS = 10 V, ID = 6.0 A 3.4 nC
DS
5.3
VGS =0.1 V, f = 5 MHz
0.5 1.4 2.4 W
10 20
VDD = 30 V, RL = 30 W
ID ^ 1 A, V
GEN
= 10 V, Rg = 6 W
10 20
25 50
12 24
IF = 1.7 A, di/dt = 100 A/ms 50 80
mA
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
− Drain Current (A)I
D
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
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2
Output Characteristics Transfer Characteristics
VGS = 10 thru 5 V
4 V
3 V
VDS − Drain-to-Source Voltage (V)
40
32
24
16
− Drain Current (A)I
D
8
TC = 150_C
25_C
−55_C
0
012345
VGS − Gate-to-Source Voltage (V)
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si4850EY
Vishay Siliconix
0.06
0.05
W )
0.04
0.03
− On-Resistance (r
0.02
DS(on)
0.01
0.00
10
− Gate-to-Source Voltage (V)
GS
V
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0 8 16 24 32 40
ID − Drain Current (A)
Gate Charge
VDS = 30 V
I
= 6.0 A
D
8
6
4
2
1400
1200
1000
800
600
C − Capacitance (pF)
400
200
0
0 102030405060
2.2
2.0
1.8
1.6
1.4
− On-Resiistance
1.2
(Normalized)
DS(on)
r
1.0
0.8
Capacitance
C
iss
C
oss
C
rss
V
− Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
VGS = 10 V
I
= 6.0 A
D
0
048121620
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50
10
− Source Current (A)I
S
1
0.00 0.5 1.0 1.5
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
TJ = 175_C
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
TJ = 25_C
2.0 2.5
W )
− On-Resistance (r
DS(on)
0.6
−50 −25 0 25 50 75 100 125 150 175
T
− Junction Temperature (_C)
J
0.06
0.05
0.04
ID = 6.0 A
0.03
0.02
0.01
0.00
0246810
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3
Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.8
ID = 250 mA
0.4
0.0
Variance (V)V
−0.4
GS(th)
−0.8
−1.2
−50 −25 0 25 50 75 100 125 150 175
TJ − Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Threshold Voltage
0.01
10
0.05
0.02
−4
Single Pulse
−3
10
Thermal Impedance
Normalized Effective Transient
Single Pulse Power
50
40
30
Power (W)
20
10
0
0.01
−2
10
−1
1 10 60010
Square Wave Pulse Duration (sec)
1
Time (sec)
Notes:
P
DM
t
1
t
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM − TA = PDMZ
4. Surface Mounted
2
thJA
10 10000.1
t
t
thJA
100
1
2
= 75_C/W
(t)
100
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
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4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
−4
10
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
11010
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
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