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Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
(V) r
DS
30
0.022 @ VGS = 10 V 7.5
0.030 @ VGS = 4.5 V 6.5
SCHOTTKY PRODUCT SUMMARY
V
(V)
DS
30 0.50 V @ 1.0 A 2.0
Diode Forward Voltage
SO-8
(W) I
DS(on)
VSD (v)
Si4834DY
Vishay Siliconix
(A)
D
I
(A)
F
D1D
1
D2D
2
S
1
1
G
2
1
S
3
2
G
4
2
Top View
Ordering Information: Si4834DY
Si4834DY-T1 (with Tape and Reel)
D
8
1
D
7
1
D
6
2
D
5
2
G
1
N-Channel MOSFET
S
1
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
P
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
I
DM
I
DS
GS
D
S
D
stg
7.5 5.7
6.0 4.6
1.7 0.9
2.0 1.1
1.3 0.7
30
"20
30
-55 to 150 _C
G
2
N-Channel MOSFET
S
2
V
A
W
THERMAL RESISTANCE RATINGS
Parameter Symbol
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady-State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71183
S-31062—Rev. B, 26-May-03
a
t v 10 sec
Steady-State
MOSFET Schottky
Typ Max Typ Max
R
thJA
thJC
52 62.5 53 62.5
93 110 93 110
35 40 35 40
Unit
_C/W
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1
Si4834DY
Ch 1
Ch 1
b
b
Ch 1
DS
,
GS
,
D
VDD = 15 V, RL = 15 W
Ch 1
g
rm
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Symbol T est Condition Min Typ
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
b
Drain-Source On-State Resistance
Forward Transconductance
b
Diode Forward Voltage
Dynamic
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v
300 ms, duty cycle v 2%.
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
g
r
f
rr
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = VGS, I
VDS = 0 V, V
VDS = 24 V, VGS = 0 V
V
DS
= 250 mA 0.8 V
D
= "20 V "100 nA
GS
Ch-1
Ch-2
_
Ch-1
Ch-2
= 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 7.5 A 0.018 0.022
VGS = 4.5 V, ID = 6.5 A 0.024 0.030
VDS = 15 V, ID = 7.5 A 22 S
IS = 1 A, VGS = 0 V
V
= 15 V, VGS = 10 V, ID = 7.5 A
DS
VDD = 15 V, RL = 15 W
ID ^ 1 A, V
= 10 V, RG = 6 W
GEN
IF = 1.7 A, di/dt = 100 A/ms
Ch-1
Ch-2
Ch-1
Ch-2
a
Max Unit
100
1
2000
15
0.47 0.5
0.8 1.2
13 20
2
2.7
0.5 1.9 3.2 W
8 16
10 20
21 40
10 20
32 70
40 80
mA
W
V
nC
ns
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Forward Voltage Drop V
Maximum Reverse Leakage Current I
Junction Capacitance C
F
rm
T
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IF = 1.0 A 0.47 0.50
IF = 1.0 A, TJ = 125_C 0.36 0.42
Vr = 30 V 0.004 0.100
Vr = 30 V, TJ = 100_C 0.7 10
Vr = -30 V, TJ = 125_C 3.0 20
Vr = 10 V
50 pF
Document Number: 71183
S-31062—Rev. B, 26-May-03
V
mA
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
20
VGS = 10 thru 4 V
16
12
8
- Drain Current (A)I
D
W )
- On-Resistance (r
DS(on)
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.040
0.032
0.024
0.016
0.008
Output Characteristics Transfer Characteristics
20
3 V
16
12
8
2 V
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
- Drain Current (A)I
D
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
1000
800
600
400
C - Capacitance (pF)
200
C
rss
TC = 125_C
Capacitance
25_C
-55_C
C
iss
C
oss
0.000
048121620
10
VDS = 15 V
I
= 7.5 A
8
6
4
- Gate-to-Source Voltage (V)
GS
2
V
0
Document Number: 71183
S-31062—Rev. B, 26-May-03
D
0 3 6 9 12 15
- Drain Current (A)
I
D
Gate Charge
Qg - Total Gate Charge (nC)
W)
(Normalized)
- On-Resistance (r
DS(on)
0
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
I
= 7.5 A
D
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T
- Junction Temperature (_C)
J
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Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20
0.04
10
TJ = 150_C
- Source Current (A)I
S
TJ = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
ID = 250 mA
-0.0
-0.2
Variance (V)V
GS(th)
-0.4
W )
0.03
0.02
- On-Resistance (r
0.01
DS(on)
0.00
50
40
30
Power (W)
20
ID = 7.5 A
0246810
Single Pulse Power
-0.6
-0.8
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
10
0.05
0.02
-4
Single Pulse
-3
10
Thermal Impedance
Normalized Effective Transient
10
0
-3
10
10
-1
-2
1 100 6001010
Time (sec)
Notes:
P
DM
t
1
t
2
t
thJA
t
thJA
100
1
2
= 93_C/W
(t)
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM - TA = PDMZ
4. Surface Mounted
-2
10
-1
1 10 60010
Square Wave Pulse Duration (sec)
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Document Number: 71183
S-31062—Rev. B, 26-May-03
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
Single Pulse
-4
10
Thermal Impedance
Normalized Effective Transient
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Foot
-3
10
-2
10
Square Wave Pulse Duration (sec)
-1
11010
- Reverse Current (mA)I
R
Reverse Current vs. Junction Temperature
20
10
1
0.1
0.01
0.001
0.0001
0 25 50 75 100 125 150
30 V
24 V
TJ - Temperature (_C)
Capacitance
200
160
120
Forward Voltage Drop
10
TJ = 150_C
TJ = 25_C
- Forward Current (A)I
F
1
0.0 0.3 0.6 0.9 1.2 1.5
VF - Forward Voltage Drop (V)
80
C - Capacitance (pF)
40
0
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Document Number: 71183
S-31062—Rev. B, 26-May-03
C
oss
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