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PRODUCT SUMMARY
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4459ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
VDS (V) R
- 30
0.005 at V
0.00775 at V
()
DS(on)
= - 10 V - 29
GS
= - 4.5 V - 23
GS
P-Channel 30-V (D-S) MOSFET
FEATURES
d
I
(A)
D
Qg (Typ.)
61 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
•100 % R
and UIS Tested
g
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Adaptor Switch
• Notebook
G
Si4459ADY
Vishay Siliconix
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
= 150 °C)
J
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 80 °C/W.
d. Based on T
Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
= 25 °C.
C
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
a, c
This document is subject to change without notice.
T
= 25 °C
C
= 70 °C
T
C
T
= 25 °C
A
TA = 70 °C
T
= 25 °C
C
= 25 °C
T
A
L = 0.1 mH
T
= 25 °C
C
T
= 70 °C 5
C
T
= 25 °C
A
TA = 70 °C
t 10 s
Steady State
D
P-Channel MOSFET
V
DS
V
GS
- 30
± 20
V
- 29
I
D
I
DM
I
S
I
AS
E
AS
- 23.5
a, b
- 19.7
a, b
- 15.6
- 70
- 6.5
a, b
- 2.9
- 30
45 mJ
A
7.8
P
D
, T
T
J
stg
R
thJA
R
thJF
29 35
13 16
a, b
3.5
a, b
2.2
- 55 to 150 °C
W
°C/W
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Si4459ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
V
Drain-Source Breakdown Voltage
V
Temperature Coefficient VDS/T
DS
Temperature Coefficient V
V
GS(th)
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
a
a
a
Input Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Tur n -O n De l a y T i m e
Rise Time
Turn-Off DelayTime
Fall Time
Tur n -O n De l a y T i m e
Rise Time
Turn-Off DelayTime
Fall Time
V
DS
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
J
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current I
Pulse Diode Forward Current I
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Fall Time t
Reverse Recovery Rise Time t
S
SM
SD
rr
rr
a
b
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
V
DS
V
DS
V
V
DS
V
DS
- 10 A, V
I
D
I
- 10 A, V
D
IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C
= 0 V, ID = - 250 µA
GS
ID = - 250 µA
V
= VGS, ID = - 250 µA
DS
VDS = 0 V, VGS = ± 20 V
V
= - 30 V, VGS = 0 V
DS
V
= - 20 V, V
DS
= - 30 V, V
= - 20 V, V
V
- 10 V, V
DS
V
= - 10 V, ID = - 15 A
GS
V
= - 4.5 V, ID = - 10 A
GS
V
= - 10 V, ID = - 15 A
DS
= - 15 V, V
DS
= - 15 V, V
= - 15 V, V
GS
= 0 V, TJ = 75 °C
GS
= 0 V, TJ = 75 °C
GS
GS
= 0 V, f = 1 MHz
GS
= - 10 V, ID = - 20 A
GS
= - 4.5 V, ID = - 20 A
GS
f = 1 MHz 0.6 3 6
V
= - 15 V, RL = 1.5
DD
V
DD
= - 10 V, Rg = 1
GEN
= - 15 V, RL = 1.5
= - 4.5 V, Rg = 1
GEN
TC = 25 °C - 29
IS = - 3 A, V
GS
- 30 V
- 31
5.3
mV/°C
- 1 - 2.5 V
± 100
= 0 V
- 100
- 75
- 10
- 3
nA
µA
= - 10 V - 30 A
0.0039 0.005
0.0062 0.00775
24 S
6000
860
pFOutput Capacitance
790
129 195
61 95
16.5
nC
23.5
16 30
16 30
80 150
20 40
75 150
ns
130 260
60 120
40 80
- 70
= 0 V - 0.71 - 1.2 V
67 130 ns
74 150 nC
22
45
ns
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This document is subject to change without notice.
Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.003
0.004
0.005
0.006
0.007
0.008
01428 42 56 70
- On-Resistance (Ω)R
DS(on)
ID- Drain Current (A)
VGS=4.5V
VGS=10V
0
2
4
6
8
10
0 30 60 90 120 150
ID=20A
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
V
GS
VDS=20V
VDS=15V
VDS=10V
C
rss
0
1800
3600
5400
7200
9000
0 6 12 18 24 30
C
iss
VDS- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
Si4459ADY
Vishay Siliconix
70
VGS=10thru 4 V
56
42
28
- Drain Current (A)I
D
14
0
012345
VDS- Drain-to-Source Voltage (V)
VGS=3V
Output Characteristics
4.0
3.2
2.4
1.6
- Drain Current (A)I
D
0.8
0.0
0.0 0.8 1.6 2.4 3.2 4.0
TC= 125 °C
TC= 25 °C
TC= - 55 °C
VGS- Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Drain Current
Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Gate Charge
1.6
ID=15A
1.4
(Normalized)- On-ResistanceR
1.2
1.0
0.8
DS(on)
0.6
- 50 - 25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
This document is subject to change without notice.
Capacitance
VGS=10V
VGS=4.5V
TJ-Junction Temperature (°C)
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Si4459ADY
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
Variance (V)V
GS(th)
TJ- Temperature (°C)
ID=5mA
0.000
0.006
0.012
0.018
0.024
0.030
02468 10
- On-Resistance (Ω)R
DS(on)
VGS- Gate-to-Source Voltage (V)
TJ= 25 °C
TJ= 125 °C
ID=15A
0.01
100
1
100
0.01
- Drain Current (A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum VGSat which R
DS(on)
is specified
1ms
10 ms
100 ms
0.1 1 10
10
TA= 25 °C
Single Pulse
Limited byR
DS(on)
*
1s
DC
10 s
BVDSS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
TJ= 150 °C
1
0.1
- Source Current (A)I
S
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD-Source-to-Drain Voltage (V)
TJ= 25 °C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
200
160
120
Power (W)
80
40
Threshold Voltage
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
This document is subject to change without notice.
0.1
Time (s)
Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
011100.00.01