Vishay Si4459ADY Schematic

PRODUCT SUMMARY

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4459ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

VDS (V) R

- 30

0.005 at V

0.00775 at V

()

DS(on)

= - 10 V - 29

GS

= - 4.5 V - 23

GS

P-Channel 30-V (D-S) MOSFET

FEATURES

d

I

(A)

D

Qg (Typ.)

61 nC

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

•100 % R

and UIS Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Adaptor Switch

• Notebook

G

Si4459ADY

Vishay Siliconix

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot

Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 80 °C/W. d. Based on T

Document Number: 69979 S11-1813-Rev. B, 12-Sep-11

= 25 °C.

C

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

a, c

This document is subject to change without notice.

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

T

= 25 °C

C

= 25 °C

T

A

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C 5

C

T

= 25 °C

A

TA = 70 °C

t 10 s

Steady State

D

P-Channel MOSFET

V

DS

V

GS

- 30

± 20

V

- 29

I

D

I

DM

I

S

I

AS

E

AS

- 23.5

a, b

- 19.7

a, b

- 15.6

- 70

- 6.5

a, b

- 2.9

- 30

45 mJ

A

7.8

P

D

, T

T

J

stg

R

thJA

R

thJF

29 35

13 16

a, b

3.5

a, b

2.2

- 55 to 150 °C

W

°C/W

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1

Si4459ADY

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/T

DS

Temperature Coefficient V

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off DelayTime

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off DelayTime

Fall Time

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

J

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current I

Pulse Diode Forward Current I

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

SM

SD

rr

a

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

V

DS

 - 10 A, V

I

D

I

 - 10 A, V

D

IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

GS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, VGS = 0 V

DS

V

= - 20 V, V

DS

= - 30 V, V

= - 20 V, V

V

 - 10 V, V

DS

V

= - 10 V, ID = - 15 A

GS

V

= - 4.5 V, ID = - 10 A

GS

V

= - 10 V, ID = - 15 A

DS

= - 15 V, V

DS

= - 15 V, V

GS

= 0 V, TJ = 75 °C

GS

= 0 V, TJ = 75 °C

GS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 20 A

GS

= - 4.5 V, ID = - 20 A

GS

f = 1 MHz 0.6 3 6 

V

= - 15 V, RL = 1.5 

DD

V

DD

= - 10 V, Rg = 1 

GEN

= - 15 V, RL = 1.5 

= - 4.5 V, Rg = 1 

GEN

TC = 25 °C - 29

IS = - 3 A, V

GS

- 30 V

- 31

5.3

mV/°C

- 1 - 2.5 V

± 100

= 0 V

- 100

- 75

- 10

- 3

nA

µA

= - 10 V - 30 A

0.0039 0.005

0.0062 0.00775

24 S

6000

860

pFOutput Capacitance

790

129 195

61 95

16.5

nC

23.5

16 30

80 150

20 40

75 150

ns

130 260

60 120

40 80

- 70

= 0 V - 0.71 - 1.2 V

67 130 ns

74 150 nC

22

45

ns



A

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 69979

S11-1813-Rev. B, 12-Sep-11

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.003

0.004

0.005

0.006

0.007

0.008

01428 42 56 70

- On-Resistance (Ω)R

DS(on)

ID- Drain Current (A)

VGS=4.5V

VGS=10V

0

2

4

6

8

10

0 30 60 90 120 150

ID=20A

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

VDS=20V

VDS=15V

VDS=10V

C

rss

0

1800

3600

5400

7200

9000

0 6 12 18 24 30

C

iss

VDS- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

oss

Si4459ADY

Vishay Siliconix

70

VGS=10thru 4 V

56

42

28

- Drain Current (A)I

D

14

0

012345

VDS- Drain-to-Source Voltage (V)

VGS=3V

Output Characteristics

4.0

3.2

2.4

1.6

- Drain Current (A)I

D

0.8

0.0

0.0 0.8 1.6 2.4 3.2 4.0

TC= 125 °C

TC= 25 °C

TC= - 55 °C

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

On-Resistance vs. Drain Current

Document Number: 69979 S11-1813-Rev. B, 12-Sep-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Gate Charge

1.6

ID=15A

1.4

(Normalized)- On-ResistanceR

1.2

1.0

0.8

DS(on)

0.6

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

This document is subject to change without notice.

Capacitance

VGS=10V

VGS=4.5V

TJ-Junction Temperature (°C)

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3

Si4459ADY

- 0.4

- 0.2

0.0

0.2

0.4

0.6

0.8

- 50 - 25 0 25 50 75 100 125 150

ID= 250 µA

Variance (V)V

GS(th)

TJ- Temperature (°C)

ID=5mA

0.000

0.006

0.012

0.018

0.024

0.030

02468 10

- On-Resistance (Ω)R

DS(on)

VGS- Gate-to-Source Voltage (V)

TJ= 25 °C

TJ= 125 °C

ID=15A

0.01

100

1

100

0.01

- Drain Current (A) I

D

0.1

V

DS

- Drain-to-Source Voltage (V)

* V

GS

> minimum VGSat which R

DS(on)

is specified

1ms

10 ms

100 ms

0.1 1 10

10

TA= 25 °C

Single Pulse

Limited byR

DS(on)

*

1s

DC

10 s

BVDSS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

10

TJ= 150 °C

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD-Source-to-Drain Voltage (V)

TJ= 25 °C

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

200

160

120

Power (W)

80

40

Threshold Voltage

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0

Single Pulse Power, Junction-to-Ambient

Safe Operating Area

This document is subject to change without notice.

0.1

Time (s)

Document Number: 69979

S11-1813-Rev. B, 12-Sep-11

011100.00.01

Vishay Si4459ADY Schematic [ru]