New Product
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Ordering Information: Si4447ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel 40 V (D-S) MOSFET
Si4447ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) R
- 40
0.045 at V
0.062 at V
()I
DS(on)
= - 10 V - 7.2
GS
= - 4.5 V - 6.1
GS
D
(A)
d
Qg (Typ.)
11.8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
• 100 % R
®
Power MOSFET
Tested
g
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches, Adaptor Switch
S
- Notebook PCs
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
C
= 70 °C
T
Continuous Drain Current (T
= 150 °C)
J
C
= 25 °C
T
A
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy E
Maximum Power Dissipation
= 25 °C
T
C
= 25 °C
T
A
L = 0.1 mH
= 25 °C
T
C
= 70 °C 2.7
T
C
= 25 °C
T
A
I
I
P
TA = 70 °C
Operating Junction and Storage Temperature Range TJ, T
DS
GS
I
D
DM
I
AS
AS
S
D
stg
- 40
± 20
V
- 7.2
- 5.7
a, b
- 5.5
a, b
- 4.4
- 20
A
- 3.5
a, b
- 2.1
- 10
5mJ
4.2
2.5
1.6
a, b
a, b
W
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on T
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
= 25 °C.
C
a, c
t 10 s R
Steady State
thJA
R
thJF
40 50
24 30
°C/W
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New Product
Si4447ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
V
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/T
DS
V
Temperature Coefficient V
GS(th)
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
a
a
a
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Tur n -O n D el a y T im e t
Rise Time t
Turn-Off DelayTime t
Fall Time t
Tur n -O n D el a y T im e t
Rise Time t
Turn-Off DelayTime t
Fall Time t
DS
J
GS(th)/TJ
GS(th)
GSS
DSS
I
V
D(on)
R
DS(on)
g
fs
iss
120
oss
95
rss
g
gs
5.2
gd
g
d(on)
r
30 60
d(off)
f
d(on)
r
28 55
d(off)
f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulse Diode Forward Current I
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Fall Time t
Reverse Recovery Rise Time t
S
SM
SD
rr
rr
a
b
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
V
V
V
DS
V
DS
I
D
I
D
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
= 0 V, ID = - 250 µA - 40 V
GS
ID = - 250 µA
V
= VGS, ID = - 250 µA - 1.2 - 2.5 V
DS
- 42
4.6
VDS = 0 V, VGS = ± 20 V ± 100 nA
V
= - 40 V, VGS = 0 V - 1
DS
= - 40 V, V
DS
DS
V
V
V
- 10 V, V
GS
GS
DS
= 0 V, TJ = 55 °C - 5
GS
= - 10 V - 10 A
GS
= - 10 V, ID = - 5 A 0.036 0.045
= - 4.5 V, ID = - 4 A 0.050 0.062
= - 10 V, ID = - 5 A 14 S
970
= - 20 V, V
DS
= - 20 V, V
= 0 V, f = 1 MHz
GS
= - 10 V, ID = - 5 A 25 38
GS
11.8 18
= - 20 V, V
= - 4.5 V, ID = - 5 A
GS
3
f = 1 MHz 1.0 5.5 11
714
V
= - 20 V, RL = 4
DD
- 5 A, V
= - 10 V, Rg = 1
GEN
12 24
918
44 80
V
DD
- 5 A, V
= - 20 V, RL = 4
= - 4.5 V, Rg = 1
GEN
33 60
13 25
TC = 25 °C - 3.5
- 20
IS = - 2 A, V
= 0 V - 0.76 - 1.2 V
GS
27 50 ns
19 35 nC
14
13
mV/°C
µA
pFOutput Capacitance C
nC
ns
A
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
New Product
0.00
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
VGS=10V
VGS=4.5V
R
DS(on)
- On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0.0 5.1 10.2 15.3 20.4 25.5
ID=5A
VDS=20V
VDS=30V
VDS=10V
Qg - Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si4447ADY
Vishay Siliconix
30
VGS=10Vthru5V
24
18
12
- Drain Current (A)
D
I
6
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
VGS=3V
Output Characteristics
VGS=4V
5
4
3
2
- Drain Current (A)
D
I
1
0
012345
TC= 25 °C
TC= 125 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
1280
960
C
iss
On-Resistance vs. Drain Current
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
Gate Charge
640
C - Capacitance (pF)
320
C
oss
C
rss
0
0.0 2.4 4.8 7.2 9.6 12.0
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID=5A
1.5
1.2
- On-Resistance
(Normalized)
DS(on)
R
0.9
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
VGS=10V
On-Resistance vs. Junction Temperature
VGS=4.5V
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