Vishay Si2399DS Schematic

P-Channel 20-V (D-S) MOSFET

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2399DS (O1)*

* Marking Code

Ordering Information: Si2399DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si2399DS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.034 at V

- 20

0.045 at V

0.067 at V

()I

DS(on)

= - 10 V - 6

GS

= - 4.5 V - 6

GS

= - 2.5 V - 5.2

GS

(A)aQg (Typ.)

D

FEATURES

• Halogen-free According to IEC 61249-2-21

e

10 nC

Definition

• TrenchFET® Power MOSFET

• 100 % R

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

• PA Switch

• DC/DC Converters

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

= 150 °C)

J

b, d

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s.

= 25 °C.

C

d. Maximum under steady state conditions is 166 °C/W. e. Package limited.

Document Number: 67343 S11-0239-Rev. A, 14-Feb-11

5 s

Steady State

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

R

thJA

R

thJF

V

DS

V

GS

I

D

I

DM

I

S

- 20

± 12

- 6

- 5.8

- 5.1

- 4.1

- 20

- 2.1

- 1.0

e

b, c

V

A

2.5

P

D

T

, T

J

stg

75 100

40 50

1.6

b, c

1.25

b, c

0.8

- 55 to 150

W

°C

°C/W

www.vishay.com

1

Si2399DS

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n D el a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J



V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

= - 4.1 A, V

I

D

IF = - 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

DS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

= - 20 V, V

DS

= - 20 V, V

- 5 V, V

DS

V

= - 10 V, ID = - 5.1 A

GS

V

= - 4.5 V, ID = - 4.5 A

GS

V

= - 2.5 V, ID = - 3.7 A

GS

= 0 V, TJ = 55 °C

GS

VDS = - 5 V, ID = - 5.1 A

= - 10 V, V

DS

= - 10 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 5.1 A

GS

= - 2.5 V, ID = - 5.1 A

GS

f = 1 MHz 0.9 4.4 8.8 

V

= - 10 V, RL = 2.4 

DD

= - 4.5 V, Rg = 1 

GEN

TC = 25 °C

IS = - 4.1 A

= 0 V

= - 4.5 V

- 20 V

- 13.4

2.9

mV/°C

- 0.6 - 1.5 V

± 100 nA

- 1

- 10

- 20 A

0.028 0.034

0.037 0.045

0.055 0.067

15 S

835

180

155

10 20

6.4 9.6

1.7

3.4

22 33

20 30

28 42

918

- 2.1

- 20

- 0.8 - 1.2 V

23 35 ns

12 20 nC

15

8

µA



pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.vishay.com 2

Document Number: 67343

S11-0239-Rev. A, 14-Feb-11

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

5

10

15

20

00.511.52

I

D

- Drain Current (A)

VDS- Drain-to-Source Voltage (V)

VGS= 5 V thru 3 V

V

GS

= 1.5 V

V

GS

= 2.5 V

V

GS

= 2 V

0.00

0.02

0.04

0.06

0.08

0 5 10 15 20

R

DS(on)

- On-Resistance (Ω)

ID-Drain Current (A)

VGS= 2.5 V

VGS= 4.5 V

V

GS

= 10 V

0

1

2

3

4

5

036912

V

GS

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

VDS= 16 V

VDS= 10 V

ID= 5.1 A

VDS= 5 V

Si2399DS

Vishay Siliconix

5

4

3

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

2

- Drain Current (A)

D

I

1

0

0 0.5 1 1.5 2

VGS- Gate-to-Source Voltage (V)

TC= 25 °C

TC= 125 °C

Transfer Characteristics

1400

1050

C

iss

700

C - Capacitance (pF)

350

C

rss

0

0 5 10 15 20

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

TC= - 55 °C

Document Number: 67343 S11-0239-Rev. A, 14-Feb-11

Gate Charge

1.5

VGS= 10 V

1.3

1.1

-On-Resistance (Normalized)

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

VGS= 4.5 V

TJ- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

www.vishay.com

3

Si2399DS

0.1

1

10

0.0 0.2 0.4 0.6 0.8 1.0 1.2

I

S

- Source Current (A)

VSD- Source-to-Drain Voltage (V)

TJ= 150 °C

TJ= 25 °C

0.5

0.7

0.8

1.0

1.1

- 50 - 25 0 25 50 75 100 125 150

V

GS(th)

(V)

TJ-Temperature (°C)

ID= 250 μA

0

0.02

0.04

0.06

0.08

246810

R

DS(on)

- On-Resistance (Ω)

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

ID= 5.1 A

0.01

0.1

1

10

100

0.1 1 10 100

I

D

- Drain Current (A)

VDS- Drain-to-Source Voltage (V)

* V

GS

> minimum VGSat which R

DS(on)

is specied

100 ms

Limited by R

DS(on)

*

1 ms

TC= 25 °C Single Pulse

BVDSS Limited

10 ms

100 μs

1 s, 10 s DC

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100 1000

TA= 25 °C

Time (s)

Single Pulse Power

www.vishay.com 4

Safe Operating Area

Document Number: 67343

S11-0239-Rev. A, 14-Feb-11

Vishay Si2399DS Schematic [ru]