Vishay Si2377EDS Schematic

New Product

P-Channel 20 V (D-S) MOSFET

Si2377EDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.061 at V

- 20

0.080 at V

0.110 at V

0.165 at V

DS(on)

GS

(Ω)

= - 4.5 V

= - 2.5 V

= - 1.8 V

= - 1.5 V

TO-236

(SOT-23)

G

1

D

3

2

S

Top View

Si2377EDS (P6)*

* Marking Code

Ordering Information: Si2377EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

I

D

- 4.4

- 3.8

- 3.3

- 0.5

(A)

a

Qg (Typ.)

7.6 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Typical ESD Performance 2000 V

• Built in ESD Protection with Zener Diode

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

S

G

R

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V Gate-Source Voltage V

= 25 °C

T

C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

C

= 25 °C

T

A

TA = 70 °C

Pulsed Drain Current I

T

= 25 °C

Continuous Source-Drain Diode Current

Maximum Power Dissipation

C

= 25 °C

T

A

= 25 °C

T

C

T

= 70 °C

C

= 25 °C

T

A

P

TA = 70 °C Operating Junction and Storage Temperature Range TJ, T

Soldering Recommendations (Peak Temperature)

d, e

DS

GS

I

D

DM

I

S

D

stg

- 20 ± 8

- 4.4

- 3.5

b, c

- 3.7

b, c

- 2.9

- 20

- 1.5

b, c

- 1.0

1.8

1.1

b, c

1.25

b, c

0.8

- 55 to 150 260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State

Notes:

= 25 °C.

a. T

C

b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W.

b, d

t ≤ 5 s

R

thJA

R

thJF

80 100 55 70

°C/W

Document Number: 65905 S10-0542-Rev. A, 08-Mar-10

www.vishay.com

1

New Product

Si2377EDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= 0 V, VGS = ± 4.5 V

DS

V

DS

= - 20 V, V

DS

= - 20 V, V

DS

V

GS

V

GS

V

GS

V

GS

≤ - 5 V, V

= - 4.5 V, ID = - 3.2 A

= - 2.5 V, ID = - 2.8 A

= - 1.8 V, ID = - 1.5 A

= - 1.5 V, ID = - 0.5 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 3.2 A

V

DS

V

DS

= - 10 V, V

= - 8 V, ID = - 5.3 A

GS

= - 4.5 V, ID = - 5.3 A

GS

f = 1 MHz 0.4 2 4 kΩ

V

= - 10 V, RL = 2.3 Ω

DD

≅ - 4.3 A, V

I

D

V

≅ - 4.3 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 10 V, RL = 2.3 Ω

= - 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 3 A, V

GS

= 0 V

IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 13

2.5

mV/°C

- 0.4 - 1 V

± 6

± 0.5

- 1

- 10

- 15 A

0.050 0.061

0.065 0.080

0.090 0.110

0.110 0.165

12 S

14 21

7.6 12

0.8

3.1

0.20 0.3

1.00 1.50

4.00 6.00

2.00 3.00

0.09 0.14

0.40 0.60

5.20 7.80

2.30 3.50

- 1.5

- 20

- 0.8 - 1.2 V

30 60 ns

20 40 nC

13

17

µA

Ω

nCGate-Source Charge

µs

A

ns

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Document Number: 65905

S10-0542-Rev. A, 08-Mar-10

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2377EDS

Vishay Siliconix

1.5

1.2

0.9

0.6

- Gate Current (mA)

GSS

I

0.3

0.0 03691215

VGS - Gate-to-Source Voltage (V)

TJ= 25 °C

Gate Current vs. Gate-Source Voltage

20

16

12

VGS=5V thru 2.5 V

VGS=2V

-2

10

-3

10

-4

10

-5

10

-6

10

- Gate Current (A)

GSS

-7

I

10

-8

10

-9

10

0 3 6 9 12 15

VGS - Gate-to-Source Voltage (V)

= 150 °C

T

J

Gate Current vs. Gate-Source Voltage

10

8

6

TJ = 25 °C

8

- Drain Current (A)I

D

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.21

0.18

0.15

VGS=1.8V

0.12

VGS=1.5V

0.09

- On-Resistance (Ω)R

0.06

DS(on)

0.03

0.00 048 12 16 20

ID- Drain Current (A)

VGS=4.5V

On-Resistance vs. Drain Current

VGS=1.5V

VGS=1V

VGS=2.5V

4

- Drain Current (A)I

D

2

0

0.0 0.4 0.8 1.2 1.6 2.0

V

GS

TC= 25 °C

TC= 125 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

8

ID=5.3A

6

4

- Gate-to-Source Voltage (V) 2

GS

V

0

0 3 6 9 12 15

Qg- Total Gate Charge (nC)

VDS=10V

VDS=5V

Gate Charge

TC= - 55 °C

VDS=16V

Document Number: 65905 S10-0542-Rev. A, 08-Mar-10

www.vishay.com

3

New Product

Si2377EDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1.5

1.4

1.3

1.2

1.1

- On-ResistanceR (Normalized)

1.0

DS(on)

0.9

0.8

0.7

- 50 - 25 0 25 50 75 100 125 150

VGS=4.5V,2.5V;ID=3.2A

VGS=1.8V;ID=1.5A

T

-Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.18

- On-Resistance (Ω)R

DS(on)

0.15

0.12

0.09

0.06

ID= 3.2 A; TJ= 25 °C

0.03

ID= 3.2 A; TJ= 125 °C

ID=0.5A;TJ= 125 °C

ID=0.5A;TJ=25 °C

100

10

- Source Current (A)I

1

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD-Source-to-Drain Voltage (V)

TJ= 150 °C

TJ= 25 °C

Soure-Drain Diode Forward Voltage

0.8

0.7

ID= 250 µA

0.6

(V)V

GS(th)

0.5

0.4

0.00

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

On-Resistance vs. Gate-to-Source Voltage

40

30

20

Power (W)

10

0

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VGS- Gate-to-Source Voltage (V)

10 10000.10.010.001 1001

Time (s)

Single Pulse Power, Junction-to-Ambient

0.3

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

0.01

0.1 1 10 100

TA= 25 °C

Single Pulse

VDS- Drain-to-Source Voltage (V)

* V

> minimum VGSat which R

GS

DS(on)

*

BVDSS Limited

DS(on)

Safe Operating Area, Junction-to-Ambient

Document Number: 65905

S10-0542-Rev. A, 08-Mar-10

100 µs

1ms

10 ms

100 ms

1s,10s DC

is specified

Vishay Si2377EDS Schematic [ru]