Vishay Si2367DS Schematic

New Product

P-Channel 20-V (D-S) MOSFET

Si2367DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.066 at V

- 20

0.130 at V

(Ω)

DS(on)

= - 4.5 V - 3.8

GS

= - 2.5 V - 3.3

GS

= - 1.8 V - 2.7

GS

TO-236

(SOT-23)

d

I

(A)

D

Qg (Typ.)

9 nC0.086 at V

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

• DC/DC Converter

G

1

D

3

S

2

Top View

Si2367DS (H7)*

* Marking Code

Ordering Information: Si2367DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

T

= 25 °C

C

= 25 °C

T

A

= 25 °C

T

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 20

± 8

- 3.8

- 3.0

a, b

- 2.8

a, b

- 2.2

- 15

- 1.4

a, b

- 0.8

1.7

0.96

0.62

1.1

a, b

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, c

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 175 °C/W.

= 25 °C.

d. T

C

Document Number: 65015 S09-1218-Rev. A, 29-Jun-09

R

thJA

R

thJF

100 130

60 75

°C/W

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1

New Product

Si2367DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

g

Qgs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

= - 20 V, V

DS

= - 20 V, V

DS

V

GS

V

GS

V

GS

≤ - 5 V, V

= - 4.5 V, ID = - 2.5 A

= - 2.5 V, ID = - 2.0 A

= - 1.8 V, ID = - 1.5 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 2.5 A

VDS = - 10 V, V

= 0 V, f = 1 MHz

GS

= - 8 V, ID = - 2.5 A

GS

= - 4.5 V, ID = - 2.5 A

GS

f = 1 MHz 2 10 20 Ω

V

= - 10 V, RL = 5 Ω

DD

≅ - 2 A, V

I

D

≅ - 2 A, V

I

D

V

= - 4.5 V, Rg = 1 Ω

GEN

= - 10 V, RL = 5 Ω

DD

= - 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 2 A, V

GS

= 0 V

IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 20

- 2.5

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

- 5 A

0.055 0.066

0.071 0.086

0.100 0.130

7.5 S

561

112

89

15 23

9 13.5

1.0

2.5

20 40

40 70

10 20

816

918

35 65

918

- 1.4

- 15

- 0.79 - 1.2 V

21 35 ns

15 25 nC

9

12

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

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Document Number: 65015

S09-1218-Rev. A, 29-Jun-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2367DS

Vishay Siliconix

15

VGS=5V thru 2.5 V

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.6 1.2 1.8 2.4 3.0

- Drain-to-Source Voltage (V)

V

DS

VGS=2V

VGS=0.5V,1V

Output Characteristics

0.20

0.16

0.12

VGS=1.8V

VGS=1.5V

2.5

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0

TC= 125 °C

0.0 0.4 0.8 1.2 1.6 2.0

TC= 25 °C

TC= - 55 °C

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

1200

960

720

C

iss

- On-Resistance (Ω)R

0.08

DS(on)

0.04

0.00

0.0 1.6 3.2 4.8 6.4 8.0

VGS=2.5V

VGS=4.5V

ID- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

8.0

ID=2.5A

6.4

4.8

3.2

- Gate-to-Source Voltage (V)

GS

1.6

V

0.0

0.0 3.4 6.8 10.2 13.6 17.0

VDS=5V

VDS=10V

VDS=15V

Qg- Total Gate Charge (nC)

Gate Charge

480

C - Capacitance (pF)

240

C

rss

0

048 12 16 20

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

1.6

ID= - 2.5 A

1.4

VGS= - 4.5 V

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

VGS= - 1.8 V

Document Number: 65015 S09-1218-Rev. A, 29-Jun-09

www.vishay.com

3

New Product

Si2367DS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

1

TJ= 150 °C

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-Source-to-Drain Voltage (V)

V

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.4

0.3

0.2

0.1

Variance (V)V

GS(th)

0.0

ID= - 250 µA

ID=-5mA

0.30

ID=2.5A

0.24

0.18

0.12

- On-Resistance (Ω)R

DS(on)

0.06

0.00 012345

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

30

24

8

1

Power (W)

12

- 0.1

- 0.2

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

10

1

- Drain Current (A)

D

I

0.1

0.01

* V

Safe Operating Area, Junction-to-Ambient

Limited byR

TA= 25 °C

Single Pulse

0.1 1 10

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

BVDSS Limited

DS(on)

6

0

0.1

Time (s )

Single Pulse Power, Junction-to-Ambient

*

1ms

10 ms

100 ms 1s,10s DC

100

is specified

DS(on)

011100.00.01

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Document Number: 65015

S09-1218-Rev. A, 29-Jun-09

Vishay Si2367DS Schematic [ru]