Vishay Si2365EDS Schematic [ru]

PRODUCT SUMMARY

S

G

D

P-Channel MOSFET

VDS (V) R

0.0320 at V

- 20

0.0410 at V

0.0675 at V

G

DS(on)

1

() Max.

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

TO-236

(SOT-23)

New Product

P-Channel 20 V (D-S) MOSFET

FEATURES

a

I

(A)

D

Qg (Typ.)

- 5.9

- 5.2

13.8 nC

- 4.3

3

D

• TrenchFET® Power MOSFET

•100 % R

Tested

g

• Built-in ESD Protection

- Typical ESD Performance 3000 V

• Material categorization:
For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Power Management for Portable and Consumer

- Load Switches

- DC/DC Converters

Si2365EDS

Vishay Siliconix

S

2

Top View

Si2365EDS (P6)*

* Marking Code

Ordering Information:

Si2365EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

T

= 25 °C

C

T

= 25 °C

A

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 20
± 8

- 5.9

- 4.7

b, c

- 4.5

b, c

- 3.6

- 20

- 1.4

b, c

- 1

1.7

1.1

b, c

1

b, c

0.6

- 55 to 150
260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State

Notes:

= 25 °C.

a. T

C

b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.

Document Number: 63199
S13-0301-Rev. B, 11-Feb-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

b, d

t  5 s

R

thJA

R

thJF

For technical questions, contact: [e-mail]

This document is subject to change without notice.

100 130

60 75

°C/W

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1

New Product

Si2365EDS

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Dynamic

b

a

a

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= 0 V, VGS = ± 4.5 V

DS

V

V

DS

V

DS

V

DS

= - 20 V, V

DS

= - 20 V, V

- 5 V, V

DS

V

= - 4.5 V, ID = - 4 A

GS

V

= - 2.5 V, ID = - 4 A

GS

V

= - 1.8 V, ID = - 2 A

GS

= - 10 V, V

= - 10 V, V

GS

GS

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

= - 8 V, ID = - 4.5 A

= - 4.5 V, ID = - 4.5 A

f = 1 MHz 2.2 11 22 

V

= - 10 V, RL = 2.8 

DD

 - 3.6 A, V

I

D

V

 - 3.6 A, V

I

D

DD

= - 4.5 V, Rg = 1 

GEN

= - 10 V, RL = 2.8 

= - 8 V, Rg = 1 

GEN

TC = 25 °C

IS = - 3.6 A, V

GS

= 0 V

IF = - 3.6 A, dI/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 14

2.5

mV/°C

- 0.4 - 1 V

± 10

± 1

- 1

- 10

- 15 A

0.0265 0.0320

0.0340 0.0410

0.0465 0.0675

23.8 36

13.8 21

1.9

3

22 33

21 32

62 93

14 21

918

612

65 98

15 23

- 1.4

- 20

- 0.8 - 1.2 V

13 20 ns

510nC

8

5

µA



nC

ns

A

ns

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Document Number: 63199

S13-0301-Rev. B, 11-Feb-13

New Product

0.000

0.010

0.020

0.030

0.040

0.050

0 3 6 9 12 15

I

GSS

- Gate Current (mA)

VGS - Gate-Source Voltage (V)

TJ = 25 °C

0

3

6

9

12

15

0 0.5 1 1.5 2

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

VGS = 1.5 V

V

GS

= 8 V thru 2 V

VGS = 1 V

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

0 4 8 12 16 20

I

GSS

- Gate Current (A)

VGS - Gate-to-Source Voltage (V)

TJ = 150 °C

TJ = 25 °C

0

0.1

0.2

0.3

0.4

0.5

0 0.35 0.7 1.05 1.4

I

D

- Drain Current (A)

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

0

500

1000

1500

2000

0 5 10 15 20

C - Capacitance (pF)

VDS - Drain-to-Source Voltage (V)

C

C

oss

C

rss

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si2365EDS

Vishay Siliconix

Gate Current vs. Gate-Source Voltage

Output Characteristics

0.1

0.08

0.06

VGS = 1.8 V

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

0.04

- On-Resistance (Ω)

DS(on)

R

Document Number: 63199
S13-0301-Rev. B, 11-Feb-13

0.02

0

0 5 10 15 20

ID - Drain Current (A)

On-Resistance vs. Drain Current

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VGS = 2.5 V

VGS = 4.5 V

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Capacitance

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New Product

0

2

4

6

8

0 5 10 15 20 25

V

GS

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS = 16 V

VDS = 5 V

VDS = 10 V

ID = 4.5 A

0

10

20

30

0.001 0.01 0.1 1 10 100
Time (s)

Power (W)

0.7

0.9

1.1

1.3

1.5

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance

(Normalized)

TJ - Junction Temperature (°C)

ID = 4 A

VGS = 4.5 V

VGS = 2.5 V

0.2

0.3

0.4

0.5

0.6

0.7

- 50 - 25 0 25 50 75 100 125 150

V

GS(th)

(V)

TJ - Temperature (°C)

I

= 250 μA

0.000

0.020

0.040

0.060

0.080

0 2 4 6 8

R

DS(on)

- On-Resistance (Ω)

VGS - Gate-to-Source Voltage (V)

TJ = 125 °C

TJ = 25 °C

ID = 4 A

Si2365EDS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Charge

Single Pulse Power, Junction-to-Ambient

100

10

TJ = 150 °C

On-Resistance vs. Junction Temperature

Threshold Voltage

1

- Source Current (A)

S

I

0.1

0.0 0.3 0.6 0.9 1.2 1.5

VSD - Source-to-Drain Voltage (V)

Soure-Drain Diode Forward Voltage

TJ = 25 °C

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Gate-to-Source Voltage

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Document Number: 63199

S13-0301-Rev. B, 11-Feb-13