Vishay Si2351DS Schematic

P-Channel 20-V (D-S) MOSFET

Si2351DS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.115 at V

- 20

0.205 at V

DS(on)

GS

(Ω)

= - 4.5 V

= - 2.5 V

I

D

- 3.0

- 2.2

(A)

a

Qg (Typ.)

3.2 nC

FEATURES

• Halogen-free Option Available

• TrenchFET

• PWM Optimized

• 100 % R

®

Power MOSFET

Tested

g

RoHS

COMPLIANT

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2351DS (G1)*

* Marking Code

Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free)

Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 20

± 12

- 2.8

- 2.4

b, c

- 2.2

b, c

- 1.8

- 10

- 2.0

b, c

- 0.91

2.1

1.0

0.7

1.5

b, c

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient

b, d

Maximum Junction-to-Foot (Drain)

≤ 5 s R

Steady State R

thJA

thJF

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W.

Document Number: 73702 S-80642-Rev. C, 24-Mar-08

Typical Maximum

90 115

60 75

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Unit

°C/W

1

Si2351DS

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

Δ

V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

≅ - 1.9 A, V

I

D

IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

DS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

= - 20 V, V

DS

= - 20 V, V

DS

≥ - 5 V, V

DS

V

= - 4.5 V, ID = - 2.4 A

GS

V

= - 2.5 V, ID = - 1.8 A

GS

= 0 V, TJ = 55 °C

GS

VDS = - 10 V, ID = - 2.4 A

= - 10 V, V

DS

= - 10 V, V

= 0 V, f = 1 MHz

GS

= - 5.0 V, ID = - 2.4 A

GS

= - 4.5 V, ID = - 2.4 A

GS

f = 1 MHz 8.5 13 Ω

V

= - 10 V, RL = 5.26 Ω

DD

= - 4.5 V, RG = 1 Ω

GEN

TC = 25 °C

IS = - 2.0 A

= 0 V

= - 4.5 V

- 20 V

- 16.7

2.1

mV/°C

- 0.6 - 1.5 V

± 100 nA

- 1

- 10

µA

- 10 A

0.092 0.115

0.164 0.205

5.5 S

250

80

55

3.4 5.1

3.2 5

0.5

nC

1.4

914

30 45

32 48

16 24

- 2.0

- 10

- 0.8 - 1.2 V

17 26 ns

58nC

14

3

Ω

pFOutput Capacitance

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73702

S-80642-Rev. C, 24-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

5

Si2351DS

Vishay Siliconix

10

8

)A( tnerruC niarD I

6

4

-

D

2

0

01234

V

VGS = 5 thru 3 V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.30

0.25

m ( e c n a t s i s e R - n O

0.20

0.15

- )

) n o ( S D

0.10

R

0.05

0.00 02468 10

V

GS

= 2.5 V

V

= 4.5 V

GS

VGS = 2.5 V

VGS = 2 V

VGS = 1.5 V

4

)A( tnerruC niarD -I

3

2

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5

TC = 25 °C

TC = 125 °C

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

Transfer Characteristics

500

400

)Fp( ec

na

300

t

i c apaC

200

-

C

100

C

0

04

C

iss

C

oss

rss

8 12 16 20

)V (

e ga

tl oV ec

ru oS

-o t-e

ta G

-

SG

V

Document Number: 73702 S-80642-Rev. C, 24-Mar-08

I

- Drain Current (A)

D

On-Resistance vs. Drain Current and Gate Voltage

5

I D = 3.0 A

4

3

2

1

0

01234

V

= 10 V

DS

Qg - Total Gate Charge (nC)

V

= 16 V

DS

Gate Charge

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6

V

= 4.5 V, I D = 2.4 A

GS

1.4

e c n

a t

)dezilam

s i

1.2

s e R - n

r

O -

oN(

1.0

) n o ( S D

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

VGS = 2.5 V, ID = 1.8 A

On-Resistance vs. Junction Temperature

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Vishay Si2351DS Schematic [ru]