Vishay Si2347DS Schematic [ru]

P-Channel 30 V (D-S) MOSFET

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2347DS (F7)*

* Marking Code

Ordering Information: Si2347DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si2347DS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.042 at V

- 30

0.068 at V

DS(on)

() Max.

= - 10 V - 5

GS

= - 6 V - 4.4

GS

= - 4.5 V - 3.9

GS

I

(A)

D

a

Qg (Typ.)

6.9 nC0.054 at V

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

Tested

g

• Material categorization:
For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Load Switch

• Notebook Adaptor Switch

• DC/DC Converter

• Power Management

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

T

= 25 °C

A

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

- 30

± 20

V

- 5

I

D

I

DM

I

S

- 4

- 3.8

- 3

- 20

- 1.4

- 0.63

b,c

b,c

b,c

A

1.7

P

D

T

, T

J

stg

1.1

b, c

1.20

b, c

0.6

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)

Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.

= 25 °C.

C

b, d

5 s

Steady State

R

thJA

R

thJF

100 130

60 75

°C/W

Document Number: 62827
S13-0111-Rev. A, 21-Jan-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

This document is subject to change without notice.

www.vishay.com

1

Si2347DS

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J



V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

V

DS

V

V

DS

V

DS

I

D

I

D

IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

GS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, V

DS

= - 30 V, V

DS

V

GS

V

GS

V

GS

= 0 V, TJ = 55 °C

GS

- 5 V, V

GS

= - 10 V, ID = - 3.8 A

= - 6 V, ID = - 3.3 A

= - 4.5 V, ID = - 3 A

VDS = - 5 V, ID = - 3.8 A

= - 15 V, V

DS

= - 15 V, V

= - 15 V, V

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 5 A

GS

= - 4.5 V, ID = - 5 A

GS

f = 1 MHz 1.7 8.3 17 

V

= - 15 V, RL = 5 

DD

= - 3 A, V

V

= - 3 A, V

= - 10 V, RG = 1 

GEN

= - 15 V, RL = 5 

DD

= - 6 V, RG = 1 

GEN

TC = 25 °C

IS = - 3 A

= 0 V

GS

= - 10 V

- 30 V

- 25

3.9

mV/°C

- 1 - 2.5 V

± 100 nA

- 1

- 10

- 20 A

0.033 0.042

0.041 0.054

0.050 0.068

10 S

705

93

73

14.5 22

6.9 10.4

2.3

2.1

612

612

19 29

918

10 20

918

18 27

714

- 1.4

- 20

- 0.8 - 1.2 V

13 20 ns

510nC

7

6

µA



pFOutput Capacitance

nC

ns

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com

For technical questions, contact: [e-mail]

2

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 62827

S13-0111-Rev. A, 21-Jan-13

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

5

10

15

20

0 0.5 1 1.5 2

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

V

GS

= 4 V

VGS = 4.5 V

VGS = 10 V thru 5 V

VGS = 3 V

0.00

0.02

0.04

0.06

0.08

0.10

0 5 10 15 20

R

DS(on)

- On-Resistance (Ω)

ID - Drain Current (A)

VGS = 6 V

VGS = 4.5 V

VGS = 10 V

0

2

4

6

8

10

0 3 6 9 12 15

V

GS

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS = 24 V

VDS = 15 V

VDS = 8 V

ID = 3.8 A

0

0.2

0.4

0.6

0.8

1

0 0.6 1.2 1.8 2.4 3

I

D

- Drain Current (A)

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

0

190

380

570

760

950

0 6 12 18 24 30

C - Capacitance (pF)

VDS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

Si2347DS

Vishay Siliconix

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Transfer Characteristics

Capacitance

1.5

VGS = 10 V, 3.8 A; 6 V, 3.3 A

1.3

Document Number: 62827
S13-0111-Rev. A, 21-Jan-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Gate Charge

1.1

0.9

- On-Resistance (Normalized)

DS(on)

R

0.7

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

For technical questions, contact: [e-mail]

This document is subject to change without notice.

VGS = 4.5V, 3A

TJ - Junction Temperature (°C)

www.vishay.com

3

Si2347DS

1.1

1.28

1.46

1.64

1.82

2

- 50 - 25 0 25 50 75 100 125 150

V

GS(th)

(V)

TJ - Temperature (°C)

I

= 250 μA

0

10

20

30

0.001 0.01 0.1 1 10 100
Time (s)

Power (W)

10 s, 1 s

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100.0

10.0

1.0

- Source Current (A)

S

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

TJ = 25 °C

0.125

0.1

0.075

0.05

- On-Resistance (Ω)

DS(on)

R

0.025

0

2 4 6 8 10

VGS - Gate-to-Source Voltage (V)

ID = 3.8 A

TJ = 125 °C

TJ = 25 °C

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

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4

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Single Pulse Power

100

Limited by R

10

1

- Drain Current (A)

D

I

0.1

0.01

0.1 1 10 100

*

DS(on)

TA = 25 °C

VDS - Drain-to-Source Voltage (V)

* V

> minimum VGS at which R

GS

BVDSS Limited

DS(on)

100 μs

1 ms

10 ms

100 ms

DC

is specied

Safe Operating Area

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Document Number: 62827

S13-0111-Rev. A, 21-Jan-13