Vishay Si2343DS Schematic

P-Channel 30-V (D-S) MOSFET

Si2343DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 30

DS(on)

0.053 at V

0.086 at V

GS

(Ω)I

= - 10 V

= - 4.5 V

(A)

D

- 4.0

- 3.1

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

®

Power MOSFET

APPLICATIONS

• Load Switch

• PA Switch

TO-236

(SOT-23)

G

1

3

D

2

S

Top V ie w

Si2343DS (F3)*

* Marking Code

Ordering Information: Si2343DS-T1

Si2343DS-T1-E3 (Lead (Pb)-free) Si2343DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 4.0 - 3.1

- 3.2 - 2.5

- 1.0 - 0.6

1.25 0.75

- 30

± 20

- 15

0.8 0.48

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 120 166

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 72079 S09-0133-Rev. B, 02-Feb-09

R

thJA

R

thJF

75 100

°C/W

40 50

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Si2343DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n T im e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

g

V

DS

V

VDS = - 15 V, VGS = 0 V, f = 1 MHz

= 0 V, ID = - 250 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 24 V, V

DS

= - 24 V, V

DS

V

GS

V

GS

≤ - 5 V, V

= - 10 V, ID = - 4.0 A

= - 4.5 V, ID = - 3.1 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 5 V, ID = - 4.0 A

IS = - 1.0 A, V

V

= - 15 V, V

DS

V

I

D

≅ - 4.0 A

I

D

= - 15 V, RL = 15 Ω

DD

≅ - 1.0 A, V

R

G

GS

GEN

= 6 Ω

= 0 V

GS

= - 10 V

Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.

Min. Typ. Max.

- 30

- 1 - 3

± 100 nA

- 15 A

Limits

- 1

- 10

0.043 0.053

0.068 0.086

10 S

- 0.7 - 1.2 V

14 21

1.9

3.7

540

131

105

10 15

15 25

31 50

20 30

Unit

V

µA

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 72079

S09-0133-Rev. B, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2343DS

Vishay Siliconix

15

VGS = 10 thru 5 V

12

9

6

- Drain Current (A)I

D

3

0

012345

0.12

0.10

0.08

0.06

- On-Resistance (Ω)

0.04

DS(on)

R

0.02

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

VGS = 4.5 V

VGS = 10 V

4 V

3 V

15

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

- Gate-to-Source Voltage (V)

V

GS

TC = 125 °C

25 °C

Transfer Characteristics

1000

800

C

600

400

C - Capacitance (pF)

200

C

rss

C

oss

iss

- 55 °C

0.00 03691215

On-Resistance vs. Drain Current

10

VDS =15 V

= 4.0 A

I

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

03691215

Document Number: 72079 S09-0133-Rev. B, 02-Feb-09

ID - Drain Current (A)

Qg - Total Gate Charge (nC)

Gate Charge

0

0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6

VGS = 4.0 V I

= 4.0 A

D

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

- On-ResistanceR

DS(on)

(Normalized)

1.4

1.2

1.0

0.8

0.6

On-Resistance vs. Junction Temperature

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Vishay Si2343DS Schematic [ru]