Vishay Si2337DS Schematic

P-Channel 80-V (D-S) MOSFET

Si2337DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 80

0.270 at V

0.303 at V

DS(on)

GS

(Ω)

= - 10 V

= - 6 V

GS

I

D

- 2.2

- 2.1

(A)

a

Qg (Typ.)

7

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

®

Power MOSFET

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2337DS (E7)*

* Marking Code

Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free) Si2337DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

T

= 25 °C

A

L = 0.1 mH

= 25 °C

T

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

- 80

± 20

- 2.2

- 1.75

b, c

- 1.2

b, c

- 0.96

- 7

- 2.1

b, c

- 0.63 11

6.0 mJ

2.5

1.6

b, c

0.76

b, c

0.48

- 50 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, d

Maximum Junction-to-Foot (Drain)

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 166 °C/W.

Document Number: 73533 S09-0133-Rev. D, 02-Feb-09

t ≤ 10 s

Steady State

R

thJA

R

thJF

120 166

40 50

°C/W

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1

Si2337DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= - 80 V, V

DS

= - 80 V, V

V

GS

V

GS

≥ 5 V, V

DS

= - 10 V, ID = - 1.2 A

= - 6 V, ID = - 1.1 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 15 V, ID = - 1.2 A

VDS = - 40 V, V

V

= - 40 V, V

DS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 1.2 A

GS

= - 6 V, ID = - 1.2 A

GS

f = 1 MHz 4.8 Ω

V

= - 40 V, RL = 42 Ω

DD

≅ - 0.96 A, V

I

D

V

DD

≅ - 0.96 A, V

I

D

= - 10 V, Rg = 1 Ω

GEN

= - 40 V, RL = 42 Ω

= - 6 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 0.63 A

IF = 0.63 A, dI/dt = 100 A/µs, TJ = 25 °C

- 80 V

- 35.8

5.45

mV/°C

- 2 - 4 V

± 100 nA

- 1

- 10

µA

- 7 A

0.216 0.270

0.242 0.303

4.3 S

500

40

pFOutput Capacitance

25

11 17.0

7 11.0

2.1

nC

3.2

10 15

15 23

20 30

15 23

18 27

20 30

12 18

- 2.1

- 7

- 0.8 - 1.2 V

30 45 ns

45 70 nC

25

5

Ω

ns

A

ns

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Document Number: 73533

S09-0133-Rev. D, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2337DS

Vishay Siliconix

7

V

= 10 thru 6 V

6

)A( tnerruC niarD -I

5

4

3

D

2

1

0

01234

- Drain-to-Source Voltage (V)

V

DS

GS

V

GS

= 5 V

= 4 V

Output Characteristics

0.30

V

0.25

(Ω) e c n a t s i s

e R - n O -

0.20

)no(SD

0.15

R

0.10 01234567

GS

= 6 V

V

GS

= 10 V

7

6

) A ( t n e r r u C n i a r D - I

5

4

3

D

2

1

0

0.0 1.0 2.0 3.0 4.0 5.0

V

- Gate-to-Source Voltage (V)

GS

T A = - 55 °C

TA = 25 °C

TA = 125 °C

Transfer Characteristics

700

600

C

)Fp( ec

500

400

na t

i c apaC

300

-

C

200

100

0

C

oss

C

rss

0 1020304050607080

iss

On-Resistance vs. Drain Current and Gate Voltage

10

) V

( e g

a

t

l o V

e c r

u o S

o t

e

t a G

-

SG

V

I D =1.2 A

8

6

4

2

0

024681012

Document Number: 73533 S09-0133-Rev. D, 02-Feb-09

- Drain Current (A)

I

D

V

= 40 V

DS

V

DS

Q g - Total Gate Charge (nC)

Gate Charge

= 64 V

VDS - Drain-to-Source Voltage (V)

Capacitance

2.0

1.8

I D = 1.2 A

1.6

e c n

a

t

)

1.4

s i s

d ezi

e R

l amro

-

1.2

n O

- N

) n o ( S D

(

1.0

R

0.8

0.6

0.4

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

V

GS

= 10 V

VGS = 6 V

On-Resistance vs. Junction Temperature

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Si2337DS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20

10

) A ( t n e r r u C e c r u o S -I

1

S

0.1

T J = 150 °C

- Source-to-Drain Voltage (V)

V

SD

TJ = 25 °C

1.0 1.20.0 0.2 0.4 0.6 0.8

Source-Drain Diode Forward Voltage

3.6

3.4

3.2

3.0

) V(

) h

t(

2.8

S G

V

2.6

I D = 250 µA

0.6

I

= 1.2 A

(Ω) e c n a t s i s e R - n O e c r u o S - o t - n i a r D -

) n o ( S D

R

D

0.5

0.4

0.3

TA= 25 °C

0.2

0.1 34567

VGS - Gate-to-Source Voltage (V)

T A = 125 °C

On-Resistance vs. Gate-to-Source Voltage

16

14

12

) W (

10

r e w o P

8

6

2.4

2.2

2.0

- 50 - 25 0 25 50 75 100 125 150

T

- Temperature (°C)

J

Threshold Voltage

100

Limited by R

10

) A( t

ner

1

ru C

n

iar

0.1

D -I

D

0.01

0.001

0.1 1 10 1000

* V

>

GS

Safe Operating Area, Junction-to-Ambient

4

2

0

DS(on)*

T A = 25 °C

Single Pulse

100

VDS - Drain-to-Source Voltage (V)

minimum VGS at which R

DS(on)

0.01 0.1 1 10 100 1000

Time (s)

Single Pulse Power, Junction-to-Ambient

1 ms

10 ms

100 ms

1 s 10 s

DC

is specified

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Document Number: 73533

S09-0133-Rev. D, 02-Feb-09

Vishay Si2337DS Schematic [ru]