Vishay Si2335DS Schematic

P-Channel 12-V (D-S) MOSFET

Si2335DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 12

DS(on)

0.051 at V

0.070 at V

0.106 at V

GS

Ordering Information: Si2335DS-T1-E3 (Lead (Pb)-free)

(Ω)I

= - 4.5 V

= - 2.5 V

= - 1.8 V

(A)

D

- 4.0

- 3.5

- 3.0

TO-236

(SOT-23)

G

1

S

2

Top V ie w

Si2335DS (E5)*

*Marking Code

Si2335DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

•

Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

D

3

®

Power MOSFETs: 1.8 V Rated

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 4.0 - 3.2

- 3.3 - 2.6

1.25 0.75

- 12

± 8

- 15

- 1.6

0.8 0.48

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 120 166

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.

R

thJA

R

thJF

75 100

°C/W

40 50

Document Number: 71314 S09-0130-Rev. B, 02-Feb-09

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Si2335DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n T i m e

Turn-Off Time

Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

C

t

d(on)

t

d(off)

DS

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

V

DS

g

V

DS

VDS = - 6 V, VGS = 0 V, f = 1 MHz

≅ - 1.0 A, V

I

D

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 9.6 V, V

DS

= - 9.6 V, V

≤ - 5 V, V

V

DS

V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 4.0 A

GS

V

= - 2.5 V, ID = - 3.5 A

GS

V

= - 1.8 V, ID = - 2.0 A

GS

= 0 V, TJ = 55 °C

GS

VDS = - 5 V, ID = - 4.0 A

IS = - 1.6 A, V

= - 6 V, V

V

DD

= - 6 V, RL = 6 Ω

GS

= - 4.5 V, ID ≅ - 4.0 A

GS

= - 4.5 V, RG = 6 Ω

GEN

= 0 V

= - 4.5 V

= - 2.5 V

= 0 V

- 12

- 0.45

± 100 nA

- 1

- 10

- 15

- 6

0.042 0.051

0.058 0.070

0.082 0.106

7S

- 1.2 V

915

1.9

1.5

1225

260

130

13.0 20

15 25

50 70

19 35

Unit Min. Typ. Max.

V

µA

A

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

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Document Number: 71314

S09-0130-Rev. B, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2335DS

Vishay Siliconix

15

VGS = 4.5 V thru 2.5 V

12

9

6

- Drain Current (A)I

D

3

0

0246810

V

- Drain-to-Source Voltage (V)

DS

2 V

1.5 V

1 V, 0.5 V

Output Characteristics

0.30

0.25

0.20

VGS = 1.8 V

0.15

- On-Resistance (Ω)R

0.10

DS(on)

0.05

0.00 03691215

VGS = 2.5 V

VGS = 4.5 V

15

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

25 °C

125 °C

Transfer Characteristics

2000

1500

1000

C - Capacitance (pF)

500

0

036912

C

iss

C

oss

C

rss

On-Resistance vs. Drain Current

8

VDS = 6 V

= 4.0 A

I

D

6

4

- Gate-to-Source Voltage (V) 2

GS

V

0

0 5 10 15 20

Document Number: 71314 S09-0130-Rev. B, 02-Feb-09

- Drain Current (A)

I

D

Qg - Total Gate Charge (nC)

Gate Charge

- On-Resistance R

DS(on)

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6

VGS = 4.5 V I

= 4.0 A

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

(Normalized)

1.4

1.2

1.0

0.8

0.6

On-Resistance vs. Junction Temperature

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Vishay Si2335DS Schematic [ru]