Vishay Si2333DS Schematic

P-Channel 12-V (D-S) MOSFET

Si2333DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 12

DS(on)

0.032 at V

0.042 at V

0.059 at V

GS

FEATURES

(Ω)I

= - 4.5 V

= - 2.5 V

= - 1.8 V

(A)

D

- 5.3

- 4.6

- 3.9

TO-236

(SOT-23)

G

1

2

S

Top View

Si2333DS (E3)*

* Marking Code

Ordering Information: Si2333DS-T1-E3 (Lead (Pb)-free)

Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

APPLICATIONS

• Load Switch

• PA Switch

D

3

®

Power MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 5.3 - 4.1

- 4.2 - 3.3

- 1.0 - 0.6

1.25 0.75

- 12

± 8

- 20

0.8 0.48

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 120 166

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.

R

thJA

R

thJF

75 100

°C/W

40 50

Document Number: 72023 S09-0130-Rev. C, 02-Feb-09

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Si2333DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n Ti m e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

g

V

DS

V

VDS = - 6 V, VGS = 0 V, f = 1 MHz

= 0 V, ID = - 250 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 9.6 V, V

DS

= - 9.6 V, V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 5.3 A

GS

V

= - 2.5 V, ID = - 4.6 A

GS

V

= - 1.8 V, ID = - 2.0 A

GS

= 0 V, TJ = 55 °C

GS

= - 4.5 V

GS

VDS = - 5 V, ID = - 5.3 A

IS = - 1.0 A, V

V

= - 6 V, V

DS

I

D

V

= - 6 V, RL = 6 Ω

DD

≅ - 1.0 A, V

I

D

R

≅ - 5.3 A

G

GS

GEN

= 6 Ω

= 0 V

GS

= - 4.5 V

= 0 V

- 12

- 0.40 - 1.0

± 100 nA

- 1

- 10

- 20 A

0.025 0.032

0.033 0.042

0.046 0.059

17 S

- 0.7 - 1.2 V

11.5 18

1.5

3.2

1100

390

300

25 40

45 70

72 110

60 90

Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Unit Min. Typ. Max.

V

µA

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

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Document Number: 72023

S09-0130-Rev. C, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2333DS

Vishay Siliconix

20

VGS = 5 V thru 2.5 V

16

12

8

- Drain Current (A)

D

I

4

0

012345

VDS - Drain-to-Source Voltage (V)

2 V

1.5 V

Output Characteristics

0.15

0.12

0.09

0.06

- On-Resistance (Ω)R

DS(on)

0.03

0.00

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

048121620

- Drain Current (A)

I

D

On-Resistance vs. Drain Current

1 V

20

TC = - 55 °C

16

12

8

- Drain Current (A)

D

I

4

0

0.0 0.5 1.0 1.5 2.0 2.5

VGS - Gate-to-Source Voltage (V)

25 °C

Transfer Characteristics

1800

1500

1200

900

600

C - Capacitance (pF)

C

300

rss

0

036912

VDS - Drain-to-Source Voltage (V)

C

iss

C

oss

Capacitance

125 °C

5

VDS = 6 V

= 5.3 A

I

D

4

3

2

- Gate-to-Source Voltage (V)

1

GS

V

0

03691215

Qg - Total Gate Charge (nC)

Document Number: 72023 S09-0130-Rev. C, 02-Feb-09

Gate Charge

1.4

1.3

1.2

1.1

- On-Resistance

1.0

DS(on)

R

(Normalized)

0.9

0.8

- 50 - 25 0 25 50 75 100 125 150

VGS = 4.5 V

= 5.3 A

I

D

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Vishay Si2333DS Schematic [ru]