Vishay Si2333DDS Schematic

P-Channel 12 V (D-S) MOSFET

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2333DDS (O4)*

* Marking Code

Ordering Information: Si2333DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si2333DDS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.028 at V

0.032 at V

- 12

0.040 at V

0.063 at V

0.150 at V

DS(on)

() Max.

= - 4.5 V - 6

GS

= - 3.7 V - 6

GS

= - 2.5 V - 6

GS

= - 1.8 V - 4.5

GS

= - 1.5 V - 3.6

GS

I

(A)

D

e

a

Qg (Typ.)

9 nC

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

Tested

g

• Material categorization: For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Smart Phones and Tablet PCs

- Load Switch

- Battery Switch

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. e. Package limited.

Document Number: 63861 S12-0801-Rev. A, 16-Apr-12

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 25 °C.

C

b, d

Steady State

For technical support, please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

5 s

T

= 25 °C

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

R

thJA

R

thJF

V

DS

V

GS

I

D

I

DM

I

S

- 12 ± 8

- 6

- 5.2

- 5

- 4

- 20

- 1.4

- 0.63

b, c

V

e

A

b, c

1.7

P

D

, T

T

J

stg

100 130

60 75

1.1

b, c

1.20

b, c

0.6

- 55 to 150

W

°C

°C/W

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Si2333DDS

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J



V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

= - 4 A, V

I

D

IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

DS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 12 V, V

DS

= - 12 V, V

- 5 V, V

DS

V

GS

V

= - 3.7 V, ID = - 4.6 A

GS

V

= - 2.5 V, ID = - 4.3 A

GS

V

GS

V

= - 1.5 V, ID = - 0.5 A

GS

= 0 V, TJ = 55 °C

GS

= - 4.5 V, ID = - 5 A

= - 1.8 V, ID = - 1 A

VDS = - 5 V, ID = - 5 A

= - 6 V, V

DS

= - 6 V, V

DS

= - 6 V, V

= 0 V, f = 1 MHz

GS

= - 8 V, ID = - 5 A

GS

= - 4.5 V, ID = - 5 A

GS

f = 1 MHz 1.9 9.5 19 

V

= - 6 V, RL = 6 

DD

= - 4.5 V, RG = 1 

GEN

TC = 25 °C

IS = - 4 A

= 0 V

GS

= - 4.5 V

- 12 V

- 8

2.4

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

- 20 A

0.023 0.028

0.026 0.032

0.033 0.040

0.048 0.063

0.075 0.150

18 S

1275

255

236

23 35

14 21

2.3

3.6

26 40

24 40

45 70

20 35

- 1.4

- 20

- 0.8 - 1.2 V

24 48 ns

816nC

9

15

µA



pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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For technical support, please contact: pmostechsupport@vishay.com

2

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 63861

S12-0801-Rev. A, 16-Apr-12

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

GS

0.00

0.03

0.06

0.09

0.12

0.15

0 5 10 15 20

R

DS(on)

- On-Resistance (Ω)

ID - Drain Current (A)

VGS = 1.8 V

V

GS

= 2.5 V

VGS = 1.5 V

VGS = 3.7 V

V

GS

= 4.5 V

0

2

4

6

8

0 5 10 15 20

V

GS

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS = 9.6 V

VDS = 3 V

VDS = 6 V

ID = 5 A

Si2333DDS

Vishay Siliconix

20

15

10

- Drain Current (A)

D

I

5

0

0 0.5 1 1.5 2

VDS - Drain-to-Source Voltage (V)

= 5 V thru 2.5 V

V

VGS

VGS = 1.5 V

Output Characteristics

5

4

3

TC = 25 °C

2

- Drain Current (A)

D

I

1

0

0 0.5 1 1.5 2

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

2000

1500

C

1000

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Document Number: 63861 S12-0801-Rev. A, 16-Apr-12

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical support, please contact: pmostechsupport@vishay.com

C - Capacitance (pF)

500

0

0 3 6 9 12

1.5

ID = 5 A

1.3

1.1

- On-Resistance (Normalized)

0.9

DS(on)

R

0.7

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

This document is subject to change without notice.

C

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V

VGS = 2.5 V

TJ - Junction Temperature (°C)

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Si2333DDS

0.3

0.45

0.6

0.75

0.9

- 50 - 25 0 25 50 75 100 125 150

V

GS(th)

(V)

TJ - Temperature (°C)

I

= 250 μA

0

10

20

30

0.001 0.01 0.1 1 10 100 Time (s)

Power (W)

0.01

0.1

1

10

0.1 1 10 100

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

* V

GS

> minimum VGS at which R

DS(on)

is specied

100 ms

Limited by R

DS(on)

*

1 ms

TC= 25 °C Single Pulse

BVDSS Limited

10 ms

100 μs

1 s

DC

10 s

100

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

TJ = 150 °C

1

- Source Current (A)

S

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

Source-Drain Diode Forward Voltage

0.07

0.055

0.04

- On-Resistance (Ω)

DS(on)

0.025

R

0.01 1 2 3 4 5

VGS - Gate-to-Source Voltage (V)

ID = 5 A

TJ = 125 °C

TJ = 25 °C

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical support, please contact: pmostechsupport@vishay.com

Single Pulse Power

Safe Operating Area

Document Number: 63861

S12-0801-Rev. A, 16-Apr-12

This document is subject to change without notice.

Vishay Si2333DDS Schematic [ru]