Vishay Si2329DS Schematic

P-Channel 8 V (D-S) MOSFET

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2329DS (D9)*

* Marking Code

Ordering Information: Si2329DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si2329DS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.030 at V

0.036 at V

- 8

0.048 at V

0.068 at V

0.120 at V

DS(on)

GS

()

= - 4.5 V

= - 2.5 V

= - 1.8 V

= - 1.5 V

= - 1.2 V

I

D

- 5.9

- 3.7

(A)

- 6

- 5

e

a

Qg (Typ.)

11.8 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET® Power MOSFET

• 100 % R

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

• Low Voltage Gate Drive

- Low On-Resistance

• Battery Management in Portable Equipment

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

T

= 25 °C

A

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

± 5

- 6

- 5.3

- 4.2

- 20

- 2.1

- 1.0

- 8

- 6

e

b, c

V

A

2.5

P

D

T

, T

J

stg

1.6

b, c

1.25

b, c

0.8

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited.

Document Number: 67690 S11-0865-Rev. A, 02-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 25 °C.

C

b, d

5 s

Steady State

R

thJA

R

thJF

This document is subject to change without notice.

75 100

40 50

°C/W

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1

Si2329DS

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J



V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

= - 4.2 A, V

I

D

IF = - 4.2 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

GS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 5 V

V

= - 8 V, V

DS

= - 8 V, V

DS

V

GS

= 0 V, TJ = 55 °C

GS

- 5 V, V

GS

= - 4.5 V, ID = - 5.3 A

= - 2.5 V, ID = - 4.8 A

= - 1.8 V, ID = - 4.2 A

= - 1.5 V, ID = - 3.5 A

= - 1.2 V, ID = - 0.8 A

VDS = - 4 V, ID = - 5.3 A

= - 4 V, V

DS

= - 4 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 5.3 A

GS

= - 2.5 V, ID = - 5.3 A

GS

f = 1 MHz 0.8 4.2 8.4 

V

= - 4 V, RL = 0.9 

DD

= - 4.5 V, Rg = 1 

GEN

TC = 25 °C

IS = - 4.2 A

= 0 V

GS

= - 5.3 V

- 8 V

- 6

2.3

mV/°C

- 0.35 - 0.8 V

± 100 nA

- 1

- 10

- 20 A

0.025 0.030

0.030 0.036

0.037 0.048

0.045 0.068

0.060 0.120

2.0 S

1485

480

435

19.3 29

11.8 18

1.7

6.2

20 30

22 33

46 69

20 30

- 2.1

- 20

- 0.8 - 1.2 V

40 60 ns

26 39 nC

17

23

µA



pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 67690

S11-0865-Rev. A, 02-May-11

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

0.015

0.030

0.045

0.060

0.075

0.090

0 5 10 15 20

R

DS(on)

- On-Resistance (Ω)

ID- Drain Current (A)

VGS= 1.2 V

VGS= 1.5 V

VGS= 2.5 V

VGS= 1.8 V

VGS= 4.5 V

0

1

2

3

4

5

0 5 10 15 20

V

GS

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

ID= 5.3 A

VDS= 2 V

VDS= 4 V

VDS= 6.4 V

0

1

2

3

4

5

0 0.3 0.6 0.9 1.2 1.5

I

D

- Drain Current (A)

VGS- Gate-to-Source Voltage (V)

TC= 125 °C

TC= 25 °C

TC= - 55 °C

20

VGS= 5 V thru 2 V

Si2329DS

Vishay Siliconix

15

10

- Drain Current (A)

D

I

5

0

00.511.52

VDS- Drain-to-Source Voltage (V)

= 1.5 V

GS

VGS= 1 V

Output Characteristics

C - Capacitance (pF)

2800

2100

1400

700

Transfer Characteristics

C

iss

C

rss

oss

On-Resistance vs. Drain Current and Gate Voltage

Document Number: 67690 S11-0865-Rev. A, 02-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Gate Charge

0

02468

1.45

1.25

1.05

-On-Resistance (Normalized)

DS(on)

R

0.85

0.65

-50 -25 0 25 50 75 100 125 150

This document is subject to change without notice.

VDS- Drain-to-Source Voltage (V)

Capacitance

ID= 5.3 A

VGS= 4.5 V

VGS= 2.5 V

TJ- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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Si2329DS

0.1

1

10

0.0 0.2 0.4 0.6 0.8 1.0

I

S

- Source Current (A)

VSD- Source-to-Drain Voltage (V)

TJ= 25 °C

TJ= 150 °C

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.06

ID= 5.3 A

0.05

0.04

Source-Drain Diode Forward Voltage

0.6

0.5

0.4

(V)

GS(th)

V

0.3

0.2

0.1

- 50 - 25 0 25 50 75 100 125 150

TJ-Temperature (°C)

ID= 250 μA

Threshold Voltage

- On-Resistance (Ω)

DS(on)

0.03

R

0.02 12345

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100 1000

TA= 25 °C

Time (s)

Single Pulse Power

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

100

Limited by R

10

1

- Drain Current (A)

D

I

0.1

TC= 25 °C Single Pulse

0.01

0.1 1 10

* V

> minimum VGSat which R

GS

*

DS(on)

BVDSS Limited

VDS- Drain-to-Source Voltage (V)

DS(on)

Safe Operating Area

This document is subject to change without notice.

1 ms

10 ms

100 ms

1 s, 10 s

DC

is specied

Document Number: 67690

S11-0865-Rev. A, 02-May-11

Vishay Si2329DS Schematic [ru]