Vishay Si2325DS Schematic

P-Channel 150-V (D-S) MOSFET

Si2325DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 150

1.2 at V

1.3 at V

(Ω)I

DS(on)

= - 10 V

GS

= - 6.0 V

GS

(A) Qg (Typ.)

D

- 0.69

- 0.66

7.7

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

• Ultra Low On-Resistance

®

Power MOSFET

• Small Size

APPLICATIONS

• Active Clamp Circuits in DC/DC Power Supplies

TO-236

(SOT-23)

1

G

3

D

2

S

Top View

Si2325DS (D5)* * Marking Code

Ordering Information: Si2325DS -T1-E3 (Lead (Pb)-free) Si2325DS -T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a, b

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C

A

L = 1.0 mH

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

- 0.69 - 0.53

- 0.55 - 0.43

- 150

± 20

- 1.6

- 1.0 - 0.6

4.5

1.01 mJ

1.25 0.75

0.8 0.48

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 120 166

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.

Document Number: 73238 S09-0133-Rev. B, 02-Feb-09

R

thJA

R

thJF

75 100

°C/W

40 50

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Si2325DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n Ti m e

Turn-Off Time

Body Diode Reverse Recovery Charge

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

R

C

t

d(on)

t

d(off)

Q

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

g

rr

V

DS

V

VDS = - 25 V, V

= 0 V, ID = - 250 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 150 V, V

DS

= - 150 V, V

DS

V

GS

V

GS

≤ - 15 V, V

= - 10 V, ID = - 0.5 A

= - 6.0 V, ID = - 0.5 A

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = - 15 V, ID = - 0.5 A

IS = - 1.0 A, V

V

= - 75 V, V

DS

≅ - 0.5 A

I

D

GS

= 0 V

= 10 V,

f = 1.0 MHz 9 Ω

= 0 V, f = 1 MHz

GS

V

= - 75 V, RL = 75 Ω

DD

≅ - 1.0 A, V

I

D

R

= 6 Ω

g

GEN

= - 10 V

IF = 0.5 A, dI/dt = 100 A/µs

Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.

Min. Typ. Max.

- 150

- 2.5 - 4.5

± 100 nA

- 1.6 A

Limits

- 1

- 10

1.0 1.2

1.05 1.3

2.2 S

0.7 - 1.2 V

7.7 12

1.5

2.5

340 510

30

16

711

11 17

16 25

11 17

90 135 nC

Unit

V

µA

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73238

S09-0133-Rev. B, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2325DS

Vishay Siliconix

1.6

1.4

1.2

1.0

0.8

0.6

- Drain Current (A)I

D

0.4

0.2

0.0 0246810

VGS = 10 thru 5 V

- Drain-to-Source Voltage (V)

V

DS

4 V

Output Characteristics

2.00

1.75

1.50

1.25

1.00

- On-Resistance (Ω)R

0.75

DS(on)

0.50

0.25

0.00

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VGS = 6 V

VGS = 10 V

3 V

1.6

1.4

1.2

1.0

0.8

0.6

- Drain Current (A)I

D

0.4

0.2

0.0 012345

- Gate-to-Source Voltage (V)

V

GS

TC = 125 °C

25 °C

Transfer Characteristics

500

400

C

iss

300

200

C - Capacitance (pF)

100

C

oss

C

rss

0

0 30 60 90 120 150

- 55 °C

On-Resistance vs. Drain Current

10

VDS = 75 V

= 0.5 A

I

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

012345678

Document Number: 73238 S09-0133-Rev. B, 02-Feb-09

ID - Drain Current (A)

Qg - Total Gate Charge (nC)

Gate Charge

VDS - Drain-to-Source Voltage (V)

Capacitance

2.5

VGS = 10 V

= 0.5 A

I

2.0

1.5

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.5

0.0

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Vishay Si2325DS Schematic [ru]