Vishay Si2323DS Schematic [ru]

Si2323DS
C/W
PRODUCT SUMMARY
V
DS
(V)
-20
r
DS(on)
0.039 @ VGS = -4.5 V -4.7
0.052 @ VGS = -2.5 V - 4.1
0.068 @ VGS = -1.8 V - 3.5
New Product
P-Channel 20-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
I
(W)
(A)
D
APPLICATIONS
D Load Switch D PA Switch
TO-236
(SOT-23)
G
1
D
3
S
2
Vishay Siliconix
Top View
Si2323DS (D3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage V Gate-Source Voltage V
a, b
a, b
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a, b
a, b
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
P
DM
I
DS GS
I
D
S
D
stg
- 4.7
-3.8 -2.9
-1.0 -0.6
1.25 0.75
0.8 0.48
-20 8
-20
-55 to 150
THERMAL RESISTANCE RATINGS
V
-3.7
A
W
_C
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature.
a
t 5 sec 75 100
Steady State
R
thJA
thJF
120 166
40 50
_C/W
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Si2323DS
D
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V Gate-Threshold Voltage V Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage V
Dynamic
b
a
a
a
(BR)DSS
r
GS(th)
GSS
DSS
I
D(on)
DS(on)
g
fs
SD
VGS = 0 V, ID = -250 mA
VDS = VGS, ID = -250 mA
VDS = 0 V, VGS = 8 V 100 nA
VDS = -16 V, VGS = 0 V -1
VDS = -16 V, VGS = 0 V, TJ = 55_C
VDS -5 V, VGS = -4.5 V -20 A
VGS = -4.5 V, ID = -4.7 A 0.031 0.039 VGS = -2.5 V, ID = -4.1 A 0.041 0.052 VGS = -1.8 V, ID = -2.0 A 0.054 0.068
VDS = -5 V, ID = -4.7 A 16 S
IS = -1.0 A, VGS = 0 V 0.7 -1.2 V
-20
-0.40
Limits
-1.0
-10
V
mA
W
Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C
Switching
Turn-On Time
Turn-Off Time
Notes a. Pulse test: PW 300 ms duty cycle 2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.
c
t
d(on)
t
d(off)
iss
oss
rss
t
t
g
gs
gd
r
f
VDS = -10 V, VGS = -4.5 V
VDS = -10 V, VGS = 0, f = 1 MHz
VDD = -10 V, RL = 10 W
ID -1.0 A, V
-4.7 A
ID  -4.7 A
I
GEN
R
= 6 W
G
= -4.5 V
12.5 19
1.7
3.3
1020
191 140
25 40 43 65 71 110 48 75
nC
pF
ns
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S-22121Rev. B, 25-Nov-02
Si2323DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
16
12
8
- Drain Current (A)I
D
4
0
012345
0.15
Output Characteristics Transfer Characteristics
VGS = 5 thru 2.5 V
2 V
1.5 V
- Drain Current (A)I
D
1 V
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Vishay Siliconix
20
TC = -55_C
16
12
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V)
Capacitance
1800
25_C
125_C
0.12
W )
0.09 VGS = 1.8 V
0.06
- On-Resistance (r
DS(on)
0.03
0.00
0 4 8 12 16 20
ID - Drain Current (A)
VGS = 2.5 V
VGS = 4.5 V
Gate Charge
5
VDS = 6 V
= 4.7 A
I
D
4
3
2
- Gate-to-Source Voltage (V)
GS
1
V
0
03691215
Qg - Total Gate Charge (nC)
1500
1200
900
600
C - Capacitance (pF)
300
C
rss
0
0 4 8 12 16 20
On-Resistance vs. Junction Temperature
1.5
1.4
W)
1.3
1.2
1.1
1.0
(Normalized)
- On-Resistance (r
0.9
DS(on)
0.8
0.7
0.6
VGS = 4.5 V I
D
-50 -25 0 25 50 75 100 125 150
C
oss
- Drain-to-Source Voltage (V)
V
DS
= 4.7 A
T
- Junction T emperature (_C)
J
C
iss
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