Vishay Si2323CDS Schematic

P-Channel 20-V (D-S) MOSFET

Si2323CDS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.039 at V

- 20

0.050 at V

0.063 at V

(Ω)

DS(on)

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

Ordering Information: Si2323CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

I

G

S

(A)

D

- 6

- 5.8

- 5.1

a

Qg (Typ.)

e

9 nC

TO-236

(SOT-23)

1

2

Top View

Si2323CDS (P3)*

* Marking Code

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

• PA Switch

• DC/DC Converters

D

3

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

- 20 ± 8

- 6

- 5.2

- 4.6

- 3.7

- 20

- 2.1

- 1.0

e

b, c

V

A

2.5

P

D

T

, T

J

stg

1.6

b, c

1.25

b, c

0.8

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited.

b, d

≤ 5 s

Steady State

R

thJA

R

thJF

75 100

40 50

°C/W

Document Number: 65700 S10-0035-Rev. A, 11-Jan-10

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1

Si2323CDS

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n D el a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

Δ

V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

= - 3.7 A, V

I

D

IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

DS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 20 V, V

DS

= - 20 V, V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 4.6 A

GS

V

= - 2.5 V, ID = - 4.1 A

GS

V

= - 1.8 V, ID = - 3.6 A

GS

= 0 V, TJ = 55 °C

GS

VDS = - 5 V, ID = - 4.6 A

= - 10 V, V

DS

= - 10 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 4.6 A

GS

= - 2.5 V, ID = - 4.6 A

GS

f = 1 MHz 0.8 4.1 8.2 Ω

V

= - 10 V, RL = 2.7 Ω

DD

= - 4.5 V, RG = 1 Ω

GEN

TC = 25 °C

IS = - 3.7 A

= 0 V

GS

= - 4.5 V

- 20 V

- 14

2.4

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

- 20 A

0.032 0.039

0.041 0.050

0.050 0.063

2.0 S

1090

155

135

16 25

9.3 15

2.5

3.2

15 23

23 35

40 60

12 20

- 2.1

- 20

- 0.8 - 1.2 V

30 45 ns

20 40 nC

17

13

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65700

S10-0035-Rev. A, 11-Jan-10

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2323CDS

Vishay Siliconix

20

VGS=5V thru 2 V

15

10

- Drain Current (A)

D

I

5

0

0.0 0.5 1.0 1.5 2.0

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.10

0.08

VGS=1.8V

0.06

0.04

- On-Resistance (Ω)R

DS(on)

0.02

0.00 0 5 10 15 20

VGS=1.5V

VGS=1 V

VGS=2.5V

VGS=4.5V

4

3

TC= 125 °C

2

- Drain Current (A)

D

I

1

0

0.0 0.3 0.6 0.9 1.2 1.5

V

TC= 25 °C

TC=- 55 °C

- Gate-to-Source Voltage (V)

DS

Transfer Characteristics

2250

C

iss

1800

1350

900

C - Capacitance (pF)

C

450

oss

C

rss

0

0 5 10 15 20

On-Resistance vs. Drain Current and Gate Voltage

5

ID=4.6A

4

3

VDS=5V

2

- Gate-to-Source Voltage (V)

GS

1

V

0

048 12 16 20

Document Number: 65700 S10-0035-Rev. A, 11-Jan-10

ID- Drain Current (A)

VDS=10V

VDS= 16 V

Qg- Total Gate Charge (nC)

Gate Charge

(Normalized)

- On-Resistance

DS(on)

R

VDS- Drain-to-Source Voltage (V)

Capacitance

1.6

VGS=4.5V,ID=4.6A

1.4

1.2

1.0

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

VGS=2.5V,ID=4.1A

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Si2323CDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

0.15

ID=4.6A

0.12

0.09

TJ= 150 °C

1

- Source Current (A)I

S

0.1

0.0 0.3 0.6 0.9 1.2

- Source-to-Drain Voltage (V)

V

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.8

0.7

0.6

(V)

0.5

GS(th)

V

0.4

0.3

0.2

ID= 250 µA

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

0.06

- On-Resistance (Ω)R

DS(on)

0.03

0.00 012345

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100 1000

TA= 25 °C

Time (s)

Single Pulse Power

TJ= 125 °C

TJ= 25 °C

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100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

TA= 25 °C

Single Pulse

0.01

0.1 1 10 100

VDS- Drain-to-Source Voltage (V)

* V

> minimum VGSat which R

GS

DS(on)

*

BVDSS Limited

DS(on)

Safe Operating Area

100 µs

1ms

10 ms

100 ms

1s 10 s, DC

is specified

Document Number: 65700

S10-0035-Rev. A, 11-Jan-10

Vishay Si2323CDS Schematic [ru]