Vishay Si2321DS Schematic

P-Channel 20-V (D-S) MOSFET

Si2321DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 20

DS(on)

0.057 at V

0.076 at V

0.110 at V

GS

(Ω)I

= - 4.5 V

= - 2.5 V

= - 1.8 V

(A)

D

- 3.3

- 2.8

- 2.3

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFETS

APPLICATIONS

• Load Switch

• PA Switch

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2321DS *(D1)

* Marking Code

Ordering Information: Si2321DS-T1-E3 (Lead (Pb)-free) Si2321DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 3.3 - 2.9

- 2.6 - 2.3

- 0.74 - 0.59

0.89 0.71

0.57 0.45

- 20

± 8

- 12

W

- 55 to 150 °C

V

A

RoHS

COMPLIANT

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 5 s

Steady State 140 175

R

thJA

R

thJF

Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72210 S-80642-Rev. B, 24-Mar-08

115 140

°C/W

60 75

www.vishay.com

1

Si2321DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

b

Tur n -O n T im e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

V

VDS = - 6 V, VGS = 0 V, f = 1 MHz

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= 16 V, V

DS

= 16 V, V

DS

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 3.3 A

GS

V

= - 2.5 V, ID = - 2.8 A

GS

V

= - 1.8 V, ID = - 2.3 A

GS

= 0 V, TJ = 55 °C

GS

VDS = - 5 V, ID = - 3.3 A

IS = - 1.6 A, V

V

= - 6 V, V

DS

V

= - 6 V, RL = 6 Ω

DD

≅ - 1.0 A, V

I

D

≅ - 3.3 A

I

D

= 6 Ω

R

G

GS

GEN

= 0 V

= - 4.5 V

= 0 V

= - 4.5 V

Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature.

Min. Typ. Max.

- 20

- 0.40 - 0.90

± 100 nA

- 6 A

Limits

Unit

V

- 1

- 10

µA

0.044 0.057

0.061 0.076

Ω

0.084 0.110

3S

- 1.2 V

813

1.2

nCGate-Source Charge

2.2

715

170

pFOutput Capacitance

120

15 25

35 55

60 90

ns

40 60

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.vishay.com 2

Document Number: 72210

S-80642-Rev. B, 24-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2321DS

Vishay Siliconix

12

VGS = 4.5 thru 2.5 V

10

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.4 0.8 1.2 1.6 2.0

V

- Drain-to-Source Voltage (V)

DS

2 V

0.5 V

Output Characteristics

0.30

0.25

0.20

0.15

- On-Resistance (Ω)R

0.10

DS(on)

0.05

0.00 024681012

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

ID - Drain Current (A)

On-Resistance vs. Drain Current

1.5 V

1.0 V

12

10

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5

TC = 125 °C

25 °C

- 55 °C

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

1200

900

600

C - Capacitance (pF)

300

C

rss

0

048121620

C

iss

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

5

VDS = 10 V I

= 3.3 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

0246810

Document Number: 72210 S-80642-Rev. B, 24-Mar-08

Qg - Total Gate Charge (nC)

Gate Charge

1.5

VGS = 4.5 V I

= 3.3 A

1.3

1.1

0.9

- On-Resistance

(Normalized)

DS(on)

R

0.7

0.5

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

Normalized On-Resistance vs. Junction Temperature

www.vishay.com

3

Vishay Si2321DS Schematic [ru]