Vishay Si2319DS Schematic [ru]
PRODUCT SUMMARY
V
b
b
VDS (V) r
−40
0.082 @ V
0.130 @ V
P-Channel 40-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
(W) ID (A)
DS(on)
= −10 V −3.0
GS
= −4.5 V −2.4
GS
G
1
S
2
b
TO-236
(SOT-23)
APPLICATIONS
D Load Switch
D
3
Ordering Information: Si2319DS-T1
Si2319DS
Vishay Siliconix
Si2319DS-T1—E3 (Lead Free)
Top View
Si2319DS (C9)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
a
_
b
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
DS
GS
I
D
I
DM
I
S
P
D
stg
−3.0 −2.3
−2.4 −1.85
−1.0 −0.62
1.25 0.75
0.8 0.48
−55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
−40
"20
−12
A
W
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) R
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72315
S-40844—Rev. B, 03-May-04
b
R
c
thJA
thJF
75 100
120 166
40 50
_C/W
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1
Si2319DS
ID ^ −3 A
ID ^ −1.0 A, V
=
V
T
Off Ti
g
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Conditions Min Typ Max Unit
Static
Limits
Drain-Source Breakdown Voltage V
(BR)DSS
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
a
a
a
I
r
DS(on)
Diode Forward Voltage V
Dynamic
b
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Switching
c
t
Turn-On Time
urn-
-
me
t
GS(th)
GSS
DSS
D(on)
g
fs
SD
g
gs
gd
iss
oss
rss
d(on)
t
r
d(off)
t
f
VGS = 0 V, ID = −250 mA −40
VDS = VGS, ID = −250 mA −1.0 −3.0
VDS = 0 V, VGS = "20 V "100 nA
VDS = −40 V, VGS = 0 V −1
VDS = −40 V, VGS = 0 V, TJ = 55_C −10
VDS v −5 V, VGS = −10 V −6 A
VGS = −10 V, ID = −3.0 A 0.065 0.082
VGS = −4.5 V, ID = −2.4 A 0.100 0.130
VDS = −5 V, ID = −3.0 A 7.0 S
IS = −1.25 A, VGS = 0 V −0.8 −1.2 V
11.3 17
VDS = −20 V, VGS = −10 V
I
^ −3 A
D
1.7
3.3
470
VDS = −20 V, VGS = 0, f = 1 MHz
85
65
7 15
VDD = −20 V, RL =20 W
−
Rg = 6 W
GEN
−
−4.5
15 25
25 40
25 40
V
mA
W
nC
pF
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600
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Document Number: 72315
S-40844—Rev. B, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si2319DS
Vishay Siliconix
20
16
12
8
− Drain Current (A)I
D
4
0
0246810
Output Characteristics Transfer Characteristics
VGS = 10 thru 5 V
1 V, 2 V
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
0.16
W )
0.12
0.08
− On-Resistance (r
DS(on)
0.04
0.00
VGS = 4.5 V
VGS = 10 V
024681012
ID − Drain Current (A)
4 V
3 V
12
10
8
6
4
− Drain Current (A)I
D
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
800
700
600
500
400
300
C − Capacitance (pF)
200
100
C
0
0 5 10 15 20 25 30 35 40
TC = 125_C
25_C
VGS − Gate-to-Source Voltage (V)
Capacitance
C
iss
C
oss
rss
V
− Drain-to-Source Voltage (V)
DS
−55_C
10
VDS = 20 V
I
= 3 A
D
8
6
4
− Gate-to-Source Voltage (V)
2
GS
V
0
024681012
Document Number: 72315
S-40844—Rev. B, 03-May-04
Gate Charge
Qg − Total Gate Charge (nC)
1.8
1.6
1.4
1.2
− On-Resiistance
1.0
(Normalized)
DS(on)
r
0.8
0.6
−50 −25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
VGS = 10 V
I
= 3 A
D
− Junction Temperature (_C)
T
J
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