Vishay Si2319CDS Schematic

P-Channel 40 V (D-S) MOSFET

Si2319CDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.077 at V

- 40

0.108 at V

DS(on)

GS

(Ω)

= - 10 V

= - 4.5 V

I

D

- 4.4

- 3.7

(A)

a

Qg (Typ.)

7 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

•TrenchFET

• 100 % R

• Compliant to RoHS Directive 2002/95/EC

®

Power MOSFET

Tested

g

APPLICATIONS

• Load Switch

TO-236

(SOT-23)

1

G

D

3

S

2

Top View

Si2319CDS (P7)*

* Marking Code

Ordering Information: Si2319CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

• DC/DC Converter

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

C

= 70 °C - 3.5

T

Continuous Drain Current (T

= 150 °C)

J

C

T

= 25 °C

A

TA = 70 °C

Pulsed Drain Current I

T

= 25 °C

Continous Source-Drain Diode Current

Maximum Power Dissipation

C

T

= 25 °C

A

T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

Operating Junction and Storage Temperature Range

T

DS

GS

I

D

DM

I

S

P

D

, T

J

stg

- 40

± 20

- 4.4

b, c

- 3.1

b, c

- 2.5

- 20

- 2.1

b, c

- 1

2.5

1.6

b, c

1.25

b, c

0.8

- 55 to 150

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W.

Document Number: 66709 S10-1286-Rev. A, 31-May-10

b, d

t ≤ 5 s

R

thJA

R

thJF

75 100

40 50

°C/W

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1

Si2319CDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

a

V

DS

ΔV

DS/TJ

ΔV

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

≅ - 2.5 A, V

I

D

≅ - 2.5 A, V

I

D

IF = - 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

GS

ID = - 250 µA

VDS = V

V

= 0 V, V

DS

V

= - 40 V, V

DS

= - 40 V, V

≤ - 5 V, V

DS

V

= - 10 V, ID = - 3.1 A

GS

V

= - 4.5 V, ID = - 2.6 A

GS

V

= - 15 V, ID = - 3.1 A

DS

= - 20 V, V

DS

= - 20 V, V

f = 1 MHz 0.8 4.3 8.6 Ω

V

= - 20 V, RL = 8 Ω

DD

V

= - 20 V, RL = 8 Ω

DD

TC = 25 °C

IS = - 2.5 A, V

, ID = - 250 µA

GS

= ± 20 V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

GS

= - 10 V

GS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 3.1 A

GS

= - 4.5 V, ID = - 3.1 A

GS

= - 4.5 V, Rg = 1 Ω

GEN

= - 10 V, Rg = 1 Ω

GEN

= 0 V

GS

- 40 V

- 40

4.8

mV/°C

- 1.2 - 2.5 V

± 100 nA

- 1

- 5

- 20 A

0.064 0.077

0.090 0.108

10 S

595

76

61

13.6 21

711

2.5

3.2

40 60

27 41

18 27

10 20

816

918

20 30

816

- 2.1

- 20

- 0.8 - 1.2 V

17 26 ns

918nC

10

7

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 66709

S10-1286-Rev. A, 31-May-10

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2319CDS

Vishay Siliconix

20

15

10

- Drain Current (A)

D

I

5

0

0.0 0.5 1.0 1.5 2.0

VGS=10Vthru5V

VGS=4V

VGS=3V

VDS - Drain-to-Source Voltage (V)

Output Characteristics

0.15

0.12

VGS= - 4.5 V

0.09

VGS= - 10 V

0.06

- On-Resistance (Ω)

DS(on)

R

0.03

0.00 0 5 10 15 20

ID - Drain Current (A)

On-Resistance vs. Drain Current

5

4

3

2

- Drain Current (A)

D

I

1

0

01234

VGS - Gate-to-Source Voltage (V)

TC= 25 °C

TC= 125 °C

TC= - 55 °C

Transfer Characteristics

1000

750

C

iss

500

C - Capacitance (pF)

250

C

oss

C

rss

0

0 8 16 24 32 40

VDS - Drain-to-Source Voltage (V)

Capacitance

10

ID=3.1A

8

6

VDS=10V

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 3 6 9 12 15

Document Number: 66709 S10-1286-Rev. A, 31-May-10

VDS=20V

VDS=32V

Qg - Total Gate Charge (nC)

Gate Charge

1.8

1.5

1.2

- On-Resistance (Normalized)

DS(on)

R

0.9

0.6

- 50 - 25 0 25 50 75 100 125 150

VGS= - 10 V; ID=-3.1A

VGS=-4.5V;ID=-2.6A

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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Si2319CDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

- Source Current (A)

1

S

I

0.1 0 0.5 1.0

Source-Drain Diode Forward Voltage

2.4

2.2

2.0

(V)

GS(th)

V

1.8

TJ= 150 °C

- Source-to-Drain Voltage (V)

V

SD

ID= - 250 μA

TJ=25 °C

0.25

ID=-3.1A

0.20

0.15

TJ= 125 °C

0.10

- On-Resistance (Ω)

DS(on)

R

0.05

0.00 246810

VGS - Gate-to-Source Voltage (V)

TJ=25 °C

On-Resistance vs. Gate-to-Source Voltage

10

8

6

Power (W)

4

1.6

1.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

10

1

- Drain Current (A)

D

I

TA=25 °C

0.1 Single Pulse

0.01

0.1 1 10 100

* V

GS

Safe Operating Area, Junction-to-Ambient

Limited by R

VDS - Drain-to-Source Voltage (V)

> minimum VGS at which R

*

DS(on)

BVDSS Limited

2

0

0.01 0.1 1 10 100 1000

TA= 25 °C

Time (s)

Single Pulse Power (Junction-to-Ambient)

100 μs

1ms

10 ms

100 ms

1s,10s DC

is specied

DS(on)

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Document Number: 66709

S10-1286-Rev. A, 31-May-10

Vishay Si2319CDS Schematic [ru]