Vishay Si2318DS Schematic [ru]

Si2318DS

V

b

b

C/W

PRODUCT SUMMARY

VDS (V)

40

0.045 @ V

0.058 @ V

New Product

N-Channel 40-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

r

DS(on)

(W)

= 10 V 3.9

GS

= 4.5 V 3.5

GS

TO-236

(SOT-23)

G

1

2

S

Top View

Si2318DS( C8)*

*Marking Code

ID (A)

3

APPLICATIONS

D Stepper Motors
D Load Switch

D

Ordering Information: Si2318DS-T1 (with Tape and Reel)

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a,

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

b

a,

_

a, b

TA= 25_C

TA= 70_C

TA= 25_C

TA= 70_C

I

P

I

DM

I

DS

GS

D

3.9 3.0

3.1 2.4

S

D

stg

1.25 0.75

0.8 0.48

40

"20

16

0.8

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature

a

t v 5 sec

Steady State

R

thJA

thJF

75 100

120 166

40 50

A

W

_C

_C/W

Document Number: 72322
S-31731—Rev. A, 18-Aug-03

www.vishay.com

1

Si2318DS

DS GS D

DS GS

p

V

DD

= 20 V, RL = 20 W

Vishay Siliconix

New Product

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage V

Dynamic

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

b

a

a

a

BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

SD

gs

gd

iss

oss

rss

g

g

Switching

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall-Time t

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.

d(on)

r

d(off)

f

VGS = 0 V, ID = 250 mA

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "20 V "100 nA

VDS = 32 V, VGS = 0 V 0.5

VDS = 32 V, VGS = 0 V, TJ = 55_C

VDS w 4.5 V, VGS = 10 V 6 A

VGS = 10 V, ID = 3.9 A 0.036 0.045

VGS = 4.5 V, ID = 3.5 A 0.045 0.058

VDS = 10 V, ID = 3.9 A 11 S

IS = 1.25 A, VGS = 0 V 0.8 1.2 V

VDS = 20 V, VGS = 10 V, ID = 3.9 A

VDS = 20 V, VGS = 0 V, f = 1 MHz

V

ID ^ 1.0 A, V

= 20 V, R

= 20 W

= 10 V, RG = 6 W

GEN

Limits

40

1 3

10 15

1.6

2.1

1.8

540

80

45

5 10

12 20

20 30

15 25

V

10

mA

W

nC

W

pF

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

- Drain Current (A)I

www.vishay.com

2

20

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

16

12

8

D

4

0

0246810

VDS - Drain-to-Source Voltage (V)

4 V

1, 2 V

3 V

20

16

12

8

- Drain Current (A)I

D

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VGS - Gate-to-Source Voltage (V)

TC = 125_C

25_C

Document Number: 72322

S-31731—Rev. A, 18-Aug-03

-55_C