Vishay Si2316BDS Schematic

N-Channel 30-V (D-S) MOSFET

Si2316BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.050 at V

30

0.080 at V

(Ω)

DS(on)

= 10 V 4.5

GS

= 4.5 V 3.4

GS

FEATURES

a

(A)

I

D

Qg (Typ)

3.16 nC

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• PWM Optimized

• 100 % R

tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Battery Switch

• DC/DC Converter

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2316DS (M6)*

*Marking Code

Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)

Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit

Drain-Source Voltage V Gate-Source Voltage V

T

= 25 °C

C

T

= 70 °C 3.6

Continuous Drain Current (T

= 150 °C)

J

C

= 25 °C

T

A

TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Maximum Power Dissipation

C

= 25 °C

T

A

= 25 °C

T

C

T

= 70 °C 1.06

C

= 25 °C

T

A

P

TA = 70 °C

Operating Junction and Storage Temperature Range TJ, T

DS

GS

I

D

DM

I

S

D

stg

30

± 20

4.5

b, c

3.9

b, c

3.13 20

1.39

b, c

1.04

1.66

b, c

1.25

b, c

0.8

- 55 to 150

Unit

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State R

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 moard.

= 25 °C.

C

c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W.

b, d

≤ 5 s R

thJA

thJF

80 100 60 75

°C/W

Document Number: 70445 S09-1503-Rev. B, 10-Aug-09

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1

Si2316BDS

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage V

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off Delay Time t

Fall Ti me t

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off Delay Time t

Fall Ti me t

DS

Δ

J

V

GS(th)/TJ

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

65

oss

37

rss

g

gs

1.1

gd

f = 1 MHz 2.6 3.9 Ω

g

d(on)

r

12 18

d(off)

f

d(on)

r

11 17

d(off)

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

S

I

SM

SD

rr

a

b

V

DS

V

DS

V

DS

I

≅ 3.13 A, V

D

I

= 2.4 A, V

D

IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA 30 V

DS

ID = 250 µA

V

= VGS, ID = 250 µA 1 3 V

DS

23.92

5.2

VDS = 0 V, VGS = ± 20 V ± 100 nA

V

= 30 V, V

DS

= 30 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 3.9 A 0.041 0.050

GS

= 4.5 V, ID = 3.3 A 0.064 0.080

V

GS

= 0 V 1

GS

= 0 V, TJ = 55 °C 10

= 10 V 20 A

GS

VDS = 15V, ID = 3.9 A 6 S

350

= 15 V, V

DS

= 15 V, V

= 0 V, f = 1 MHz

GS

= 10 V, ID = 3.9 A 6.35 9.6

GS

3.16 4.8

= 15 V, V

= 4.5 V, ID = 3.9 A

GS

1.56

4.5 6.75

V

= 15 V, RL = 4.8 Ω

DD

= 10 V, RG = 1 Ω

GEN

11 16.5

710.5

20 30

V

= 15 V, RL = 6.25 Ω

DD

= 4.5 V, Rg = 1 Ω

GEN

65 98

23 35

TC = 25 °C 1.39

20

IS = 2.0 A 0.8 1.2 V

10 15 ns

46nC

6.6

3.5

mV/°C

µA

Ω

pF

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 70445

S09-1503-Rev. B, 10-Aug-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2316BDS

Vishay Siliconix

20

VGS = 10 V thru 5 V

15

10

- Drain Current (A)I

D

5

0

012345

- Drain-to-Source Voltage (V)

V

DS

VGS = 4 V

VGS = 3 V

Output Characteristics

0.20

0.16

VGS = 4.5 V

0.12

3

2

- Drain Current (A)I

D

1

0

012345

TJ = 25 °C

TJ = 125 °C

TJ = - 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

500

400

300

C

iss

0.08

- On-Resistance (Ω)

DS(on)

R

0.04

0.00 048 12 16 20

I

D

VGS = 10 V

- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 3.9 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

02468

VDS = 16 V

VDS = 24 V

Qg - Total Gate Charge (nC)

Gate Charge

200

C - Capacitance (pF)

100

C

rss

0

061218 24 30

1.8

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 10 V, ID = 3.9 A

VGS = 4.5 V, ID = 3.3 A

TJ- Junction Temperature (°C)

Document Number: 70445 S09-1503-Rev. B, 10-Aug-09

www.vishay.com

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Vishay Si2316BDS Schematic [ru]