Vishay Si2312BDS Schematic

N-Channel 20 V (D-S) MOSFET

Si2312BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.031 at V

20

0.047 at V

(Ω)I

DS(on)

= 4.5 V 5.0

GS

= 2.5 V 4.6

GS

= 1.8 V 4.1

GS

(A) Qg (Typ.)

D

7.50.037 at V

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

• Compliant to RoHS Directive 2002/95/EC

®

Power MOSFET

Tested

g

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2312BDS (M2)*

* Marking Code

Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (T

Pulsed Drain Current

Avalanche Current

b

= 150 °C)

J

a

Single Avalanche Energy E

Continuous Source Current (Diode Conduction)

Power Dissipation

a

TA = 25 °C

= 70 °C 4.0 3.1

T

A

L = 0.1 mH

TA = 25 °C

T

= 70 °C 0.80 0.48

A

Operating Junction and Storage Temperature Range T

DS

GS

I

D

I

DM

I

AS

I

S

P

D

, T

J

stg

5.0 3.9

1.0 0.63 A

1.25 0.75

20

± 8

15

13

8.45 mJ

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Maximum Junction-to-Foot Steady State R

Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.

Document Number: 73235 S10-0791-Rev. D, 05-Apr-10

R

thJA

thJF

80 100

°C/WSteady State 120 166

50 60

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Si2312BDS

Vishay Siliconix

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions

Min. Typ. Max.

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage V

Dynamic

b

GS(th)

GSS

DSS

I

D(on)

R

DS(on)

DS

g

SD

Total Gate Charge Qg

Gate-Drain Charge Q

Gate Resistance R

V

fs

gs

1.2

gd

g

VGS = 0 V, ID = 250 µA 20

V

= VGS, ID = 250 µA 0.45 0.85

DS

VDS = 0 V, VGS = ± 8 V ± 100 nA

V

DS

= 20 V, V

DS

= 20 V, V

GS

≥ 10 V, V

DS

V

= 4.5 V, ID = 5.0 A 0.025 0.031

GS

= 2.5 V, ID = 4.6 A 0.030 0.037

GS

V

= 1.8 V, ID = 4.1 A 0.036 0.047

GS

= 0 V 1

GS

= 0 V, TJ = 70 °C 75

= 4.5 V 15 A

GS

VDS = 15 V, ID = 5.0 A 30 S

IS = 1.0 A, V

= 0 V 0.8 1.2 V

GS

7.5 12

V

DS

= 10 V, V

= 4.5 V, ID = 5.0 A

GS

1.4

f = 1.0 MHz 1.1 2.2 3.3 Ω

Switching

Tur n -O n De l ay Ti m e t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

d(on)

V

r

d(off)

f

rr

I

35 55

D

= 10 V, RL = 10 Ω

DD

≅ 1.0 A, V

= 4.5 V, Rg = 6 Ω

GEN

IF = 1.0 A, dI/dt = 100 A/µs

915

30 45

10 15

13 25

4.5 7 nC

Notes: a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Unit

V

µA

ΩV

nCGate-Source Charge Q

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

15

12

9

6

- Drain Current (A)I

D

3

0

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01234

VGS = 4.5 V thru 2 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

1.5 V

1 V

15

12

9

6

- Drain Current (A)I

D

3

0

0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0

TC = 125 °C

25 °C

- Gate-to-Source Voltage (V)

V

GS

- 55 °C

Transfer Characteristics

Document Number: 73235

S10-0791-Rev. D, 05-Apr-10

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2312BDS

Vishay Siliconix

- On-Resistance (Ω)R

DS(on)

0.06

0.05

0.04

0.03

0.02

0.01

0.00

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

03691215

ID - Drain Current (A)

On-Resistance vs. Drain Current

5

VDS = 10 V I

= 5.0 A

D

4

3

1200

1000

800

600

400

C - Capacitance (pF)

200

C

rss

0

0 4 8 12 16 20

1.6

1.4

1.2

C

iss

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V I

= 5.0 A

D

2

- Gate-to-Source Voltage (V)

GS

1

V

0

012345678

Qg - Total Gate Charge (nC)

Gate Charge

20

10

TJ = 150 °C

1

TJ = 25 °C

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

0.20

0.15

0.10

- On-Resistance (Ω)R

DS(on)

0.05

0.00 012345678

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

ID = 5.0 A

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

Document Number: 73235 S10-0791-Rev. D, 05-Apr-10

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Vishay Si2312BDS Schematic [ru]