Vishay Si2309DS Schematic

P-Channel 60-V (D-S) MOSFET

Si2309DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 60

DS(on)

0.340 at V

0.550 at V

GS

(Ω)I

= - 10 V

= - 4.5 V

(A)

D

- 1.25

- 1

TO-236

(SOT-23)

G

1

3

S

2

Top View

Si2309DS (A9)*

* Marking Code

Ordering Information:

Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free) Si2309DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

D

®

Power MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

TA = 25 °C

= 70 °C

T

A

Pulsed Drain Current

Avalanche Current L = 0.1 mH

Maximum Power Dissipation

a, b

TA = 25 °C

= 70 °C

T

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

AS

P

D

T

, T

J

stg

- 60

± 20

- 1.25

- 0.85

- 8

- 5

1.25

0.8

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

a

t ≤ 5 s

Steady State 130 166

Steady State

Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

R

thJA

R

thJL

45 60

100

°C/W

Document Number: 70835 S09-0133-Rev. D, 02-Feb-09

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1

Si2309DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Rating Characteristics

Continuous Current

Pulsed Current

Diode Forward Voltage

a

Source-Drain Reverse Recovery Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

b

I

S

I

SM

V

SD

t

rr

V

DS

V

DS

I

D

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= 0 V, ID = - 250 µA

DS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 48 V, V

DS

= - 48 V, V

DS

V

GS

≥ - 4.5 V, V

= - 10 V, ID = - 1.25 A

GS

V

= - 4.5 V, ID = - 1 A

GS

= 0 V

GS

= 0 V, TJ = 125 °C

= - 10 V

GS

VDS = - 4.5 V, ID = - 1 A

= - 30 V, V

V

DD

≅ - 1 A, V

IS = - 1.25 A, V

= - 10 V, ID = - 1.25 A

GS

= - 30 V, RL = 30 Ω

= - 4.5 V, RG = 6 Ω

GEN

= 0 V

GS

IF = - 1.25 A, dI/dt = 100 A/µs

- 60

- 1

± 100 nA

- 1

- 50

- 6 A

0.275 0.340

0.406 0.550

1.9 S

5.4 12

1.15

0.92

10.5 20

11.5 20

15.5 30

7.5 15

- 1.25

- 8

- 0.82 - 1.2 V

30 55 ns

V

µA

Ω

nCGate-Source Charge

ns

A

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

8

VGS = 10 thru 6 V

6

4

- Drain Current (A)I

D

2

0

www.vishay.com 2

1 V, 2 V

0246810

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

5 V

4 V

3 V

6

5

4

3

- Drain Current (A)I

2

D

1

0

012345

V

- Gate-to-Source Voltage (V)

GS

TC = - 55 °C

25 °C

Transfer Characteristics

Document Number: 70835

S09-0133-Rev. D, 02-Feb-09

125 °C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2309DS

Vishay Siliconix

1.5

1.2

0.9

0.6

- On-Resistance (Ω)R

DS(on)

0.3

0.0 02468

VGS = 4.5 V

VGS = 10 V

ID - Drain Current (A)

On-Resistance vs. Drain Current

10

VDS = 30 V I

= 1.25 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

D

500

400

300

200

C - Capacitance (pF)

100

C

rss

0

0 6 12 18 24 30

2.0

1.8

1.6

1.4

- On-Resistance R

1.2

(Normalized)

DS(on)

1.0

0.8

C

oss

V

- Drain-to-Source Voltage (V)

DS

Capacitance

VGS = 10 V I

= 1.25 A

D

iss

0

0123456

10

1

- Source Current (A)I

S

0.1 0 0.2 0.4 0.6 0.8

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

Document Number: 70835 S09-0133-Rev. D, 02-Feb-09

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

TJ = 25 °C

1.0 1.2

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

1.0

0.8

0.6

ID = 1.25 A

0.4

- On-Resistance (Ω)R

DS(on)

0.2

0.0 0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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Vishay Si2309DS Schematic [ru]