Vishay Si2309CDS Schematic

New Product

P-Channel 60-V (D-S) MOSFET

Si2309CDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 60

0.345 at V

0.450 at V

(Ω)

DS(on)

= - 10 V - 1.6

GS

= - 4.5 V - 1.4

GS

TO-236

d

I

(A)

D

Qg (Typ.)

2.7 nC

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFET

APPLICATIONS

• Load Switch

(SOT-23)

G

1

D

3

S

2

Top View

Si2309CDS (N9)*

* Marking Code

Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)

Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

TC = 25 °C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

a, b

C

= 25 °C

T

A

TA = 70 °C

Pulsed Drain Current (10 µs Pulse Width)

Single Pulse Avalanche Current L = 0.1 mH

= 25 °C

T

Continuous Source-Drain Diode Current

Maximum Power Dissipation

C

= 25 °C

T

A

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c

V

DS

V

GS

I

D

I

DM

I

AS

I

S

P

D

, T

T

J

stg

- 60

± 20

- 1.6

- 1.3

a, b

- 1.2

a, b

- 1.0

- 8

- 5

- 1.4

a, b

- 0.9

1.7

1.1

a, b

1.0

a, b

0.67

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, c

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 166 °C/W. d. When T

= 25 °C.

C

Document Number: 68980 S-82584-Rev. A, 27-Oct-08

R

thJA

R

thJF

92 120

58 73

°C/W

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1

New Product

Si2309CDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

gd

R

g

t

r

t

f

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= - 60 V, V

DS

= - 60 V, V

V

GS

V

GS

≤ 5 V, V

DS

= - 10 V, ID = - 1.25 A

= - 4.5 V, ID = - 1.0 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 10 V, ID = - 1.0 A

VDS = - 30 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 1.25 A

GS

f = 1 MHz 7 Ω

V

= - 30 V, RL = 30 Ω

DD

≅ - 1 A, V

I

D

V

≅ - 1 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 30 V, RL = 30 Ω

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 0.75 A, V

GS

= 0 V

IF = - 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C

- 60 V

- 65

4.5

mV/°C

- 1 - 3 V

- 100 nA

- 1

- 10

µA

- 6 A

0.285 0.345

0.360 0.450

2.8 S

210

28

20

2.7 4.1

0.8

nCGate-Source Charge

1.2

40 60

35 55

15 25

10 20

510

10 20

15 25

10 20

- 1.4

- 8

- 0.8 - 1.2 V

30 60 ns

33 60 nC

18

12

Ω

pFOutput Capacitance

ns

A

ns

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Document Number: 68980

S-82584-Rev. A, 27-Oct-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2309CDS

Vishay Siliconix

8

6

4

- Drain Current (A)I

D

2

0

VGS=10thru 5 V

VGS=4V

VGS=3V

012345

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.8

0.6

VGS=4.5V

0.4

- On-Resistance (Ω)R

DS(on)

0.2

VGS=10V

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0 012345

TC= 25 °C

TC= 125 °C

V

- Gate-to-Source Voltage (V)

GS

TC= - 55 °C

Transfer Characteristics

350

280

C

iss

210

140

C - Capacitance (pF)

70

C

oss

0.0 02468

On-Resistance vs. Drain Current and Gate Voltage

10

ID=1.25A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

012345

Document Number: 68980 S-82584-Rev. A, 27-Oct-08

ID- Drain Current (A)

VDS=30V

VDS=15V

VDS=45V

Qg- Total Gate Charge (nC)

Gate Charge

C

rss

0

0 15304560

VDS- Drain-to-Source Voltage (V)

Capacitance

2.0

ID=1.25A

1.7

VGS=10V

1.4

- On-Resistance

1.1

(Normalized)

DS(on)

R

0.8

0.5

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

VGS=4.5V

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Vishay Si2309CDS Schematic [ru]