Vishay Si2308DS Schematic

N-Channel 60-V (D-S) MOSFET

Si2308DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

60

0.16 at V

0.22 at V

(Ω)I

DS(on)

GS

= 10 V

= 4.5 V

D

(A)

2.0

1.7

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2308DS (A8)*

* Marking Code

Ordering Information: Si2308DS-T1

Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

b

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

60

± 20

2.0

1.6

10

1.0

1.25

0.80

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Maximum Unit

Maximum Junction-to-Ambient

a

c

R

thJA

Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 70797 S09-0133-Rev. D, 02-Feb-09

100

166

°C/W

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Si2308DS

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

a

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

Dynamic

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Input Capacitance

Reverse Transfer Capacitance

Q

g

Q

gs

Q

gd

R

g

C

iss

C

oss

C

rss

Switching

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

t

d(on)

t

d(off)

t

r

t

f

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

VDS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= 60 V, V

DS

= 60 V, V

V

GS

≥ 4.5 V, V

DS

≥ 4.5 V, V

DS

V

= 10 V, ID = 2.0 A

GS

V

= 4.5 V, ID = 1.7 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

= 4.5 V

GS

VDS = 4.5 V, ID = 2.0 A

V

DS

IS = 1 A, V

= 30 V, V

= 0 V

GS

= 10 V, ID = 2.0 A

GS

VDS = 25 V, VGS = 0 V, f = 1 MHz

V

= 30 V, RL = 30 Ω

DD

≅ 1 A, V

I

D

= 4.5 V, Rg = 6 Ω

GEN

60

1.5 3.0

± 100 nA

0.5

10

µA

6

4

0.125 0.16

0.155 0.22

4.6 S

0.77 1.2 V

4.8 10

0.8

nCGate-Source Charge

1.0

0.5 3.3 Ω

240

50

15

715

10 20

17 35

615

V

A

Ω

pFOutput Capacitance

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 70797

S09-0133-Rev. D, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2308DS

Vishay Siliconix

12

VGS = 10 thru 5 V

9

4 V

6

- Drain Current (A)I

D

3

3 V

0

0246810

V

- Drain-to-Source Voltage (V)

DS

1 V, 2 V

Output Characteristics

1.0

0.8

0.6

- On-Resistance (Ω)R

0.4

DS(on)

0.2

0.0 036912

VGS = 4.5 V

VGS = 10 V

ID - Drain Current (A)

On-Resistance vs. Drain Current

12

9

6

- Drain Current (A)I

D

3

TC = 125 °C

25 °C

0

012345

- Gate-to-Source Voltage (V)

V

GS

- 55 °C

Transfer Characteristics

400

300

C

iss

200

C - Capacitance (pF)

100

C

0

0 6 12 18 24 30

C

oss

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

10

VDS = 30 V I

= 2.0 A

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

012345

Document Number: 70797 S09-0133-Rev. D, 02-Feb-09

Qg - Total Gate Charge (nC)

Gate Charge

2.0

1.8

1.6

1.4

1.2

- On-Resistance (Normalized)

DS(on)

1.0

R

0.8

0.6

VGS = 10 V I

= 2.0 A

D

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Vishay Si2308DS Schematic [ru]