Vishay Si2307CDS Schematic

New Product

P-Channel 30-V (D-S) MOSFET

Si2307CDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 30

0.088 at V

0.138 at V

(Ω)

DS(on)

= - 10 V - 2.7

GS

= - 4.5 V - 2.2

GS

TO-236

a, b

I

(A)

D

Qg (Typ.)

4.1 nC

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFET

APPLICATIONS

• Load Switch for Portable Devices

RoHS

COMPLIANT

(SOT-23)

G

1

D

3

S

2

Top View

Si2307CDS (N7)*

* Marking Code

Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)

Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c

TC = 25 °C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

TC = 25 °C

= 25 °C

T

A

TC = 25 °C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 30

± 20

- 3.5

- 2.8

a, b

- 2.7

a, b

- 2.2

- 12

- 1.5

a, b

- 0.91

1.8

1.14

a, b

1.1

a, b

0.7

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, c

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 166 °C/W.

Document Number: 68768 S-81580-Rev. A, 07-Jul-08

R

thJA

R

thJF

90 115

55 70

°C/W

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1

New Product

Si2307CDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

R

t

d(on)

t

d(off)

t

d(on)

t

d(off)

gd

g

t

r

t

f

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= - 30 V, V

DS

= - 30 V, V

V

GS

V

GS

≤ 5 V, V

DS

= - 10 V, ID = - 3.5 A

= - 4.5 V, ID = - 2.5 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 10 V, ID = - 3.5 A

VDS = - 15 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 2.5 A

GS

f = 1 MHz 10 Ω

V

= - 15 V, RL = 15 Ω

DD

≅ - 1 A, V

I

D

V

≅ - 1 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 15 V, RL = 15 Ω

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 0.75 A, V

GS

= 0 V

IF = - 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C

- 30 V

- 32

4.5

mV/°C

- 1 - 3 V

- 100 nA

- 1

- 10

µA

- 6 A

0.073 0.088

0.110 0.138

7S

340

67

51

4.1 6.2

1.3

nCGate-Source Charge

1.8

40 60

20 40

17 30

5.5 10

13 25

17 30

7.7 15

- 1.5

- 12

- 0.8 - 1.2 V

17 30 ns

11 20 nC

12

5

Ω

pFOutput Capacitance

ns

A

ns

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Document Number: 68768

S-81580-Rev. A, 07-Jul-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2307CDS

Vishay Siliconix

12

VGS=10thru 6 V

10

8

6

- Drain Current (A)I 4

D

2

0

0.0 0.5 1.0 1.5 2.0

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.20

0.15

VGS=4.5V

0.10

- On-Resistance (Ω)R

DS(on)

0.05

VGS=10V

VGS=5V

V

GS

V

GS

V

GS

=4V

=3V

=2V

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TC= 25 °C

TC= 125 °C

V

- Gate-to-Source Voltage (V)

GS

TC= - 55 °C

Transfer Characteristics

600

450

C

iss

300

C - Capacitance (pF)

150

C

oss

0.00 036912

On-Resistance vs. Drain Current and Gate Voltage

10

ID=2.5A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

02468

Document Number: 68768 S-81580-Rev. A, 07-Jul-08

ID- Drain Current (A)

VDS=15V

VDS=7.5V

VDS=22.5V

Qg- Total Gate Charge (nC)

Gate Charge

C

rss

0

0 6 12 18 24 30

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

ID=3.2A

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

VGS=10V

VGS=4.5V

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Vishay Si2307CDS Schematic [ru]