Vishay Si2307BDS Schematic

P-Channel 30-V (D-S) MOSFET

Si2307BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 30

DS(on)

0.078 at V

0.130 at V

GS

(Ω)

= - 10 V

= - 4.5 V

I

D

(A)

- 3.2

- 2.5

b

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFET

RoHS

COMPLIANT

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2307BDS (L7)*

* Marking Code

Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free) Si2307BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source Current (Diode Conduction)

Power Dissipation

b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 3.2 - 2.5

- 2.6 - 2.0

- 1.25 - 0.75

1.25 0.75

- 30

± 20

- 12

0.8 0.48

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b

c

R

thJA

Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72699 S-80427-Rev. C, 03-Mar-08

80 100

130 166

°C/W

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Si2307BDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n Ti m e

Turn-Off Time

V

DS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

R

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

g

V

DS

V

VDS = - 15 V, VGS = 0 V, f = 1 MHz

Notes: a. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, V

DS

= - 30 V, V

DS

V

GS

V

GS

≤ - 10 V, V

= - 10 V, ID = - 3.2 A

= - 4.5 V, ID = - 2.5 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

- 30

- 1.0 - 3.0

± 100 nA

- 6 A

VDS = - 10 V, ID = - 3.2 A

IS = - 0.75 A, V

V

= - 15 V, V

DS

≅ - 1.7 A

I

D

GS

= 0 V

= - 10 V

f = 1.0 MHz 8.0 Ω

V

= - 15 V, RL = 15 Ω

DD

≅ - 1.0 A, V

I

D

R

GEN

= 6 Ω

g

= - 4.5 V

Limits

- 1

- 10

0.063 0.078

0.105 0.130

5.0 S

- 0.85 - 1.2 V

9.0 15

1.4

2.4

380

100

75

920

12 20

25 40

14 21

Unit Min. Typ. Max.

V

µA

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 72699

S-80427-Rev. C, 03-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2307BDS

Vishay Siliconix

12

10

8

6

4

- Drain Current (A)I

D

2

0

0246810

VGS = 10 thru 5 V

VDS - Drain-to-Source Voltage (V)

Output Characteristics

0.30

0.25

0.20

0.15

- On-Resistance (Ω)R

0.10

DS(on)

0.05

0.00

VGS = 4.5 V

VGS = 10 V

0246810

ID - Drain Current (A)

On-Resistance vs. Drain Current

4 V

3 V

2 V

12

10

8

6

- Drain Current (A)I 4

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

25 °C

Transfer Characteristics

700

600

500

C

400

300

C - Capacitance (pF)

200

100

C

rss

0

0 5 10 15 20 25 30

C

oss

VDS - Drain-to-Source Voltage (V)

iss

Capacitance

- 55 °C

10

VDS = 15 V

= 3 A

I

D

8

6

4

- Gate-to-Source Voltage (V)

2

GS

V

0

0246810

Document Number: 72699 S-80427-Rev. C, 03-Mar-08

Qg - Total Gate Charge (nC)

Gate Charge

1.6 VGS = 10 V

= 3.2 A

I

D

1.4

1.2

1.0

- On-Resistance (Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Vishay Si2307BDS Schematic [ru]