Vishay Si2306BDS Schematic [ru]

N-Channel 30-V (D-S) MOSFET

Si2306BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.047 at V

0.065 at V

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

(A) Qg (Typ.)

D

4.0

3.5

3.0

FEATURES

• Halogen-free Option Available

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

RoHS

COMPLIANT

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2306BDS (L6 )*

* Marking Code

Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a, b

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

4.0 3.16

3.5 2.7

1.04 0.62

1.25 0.75

0.8 0.48

30

± 20

20

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 5 s

Steady State 130 166

R

thJA

R

thJF

Notes:
a. Surface Mounted on FR4 board, t ≤ 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 73234
S-80642-Rev. B, 24-Mar-08

80 100

°C/W

60 75

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1

Si2306BDS

Vishay Siliconix

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions

Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

a

a

Diode Forward Voltage

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

V

= 30 V, V

DS

V

DS

V

GS

GS

= 0 V, TJ = 55 °C

GS

≥ 4.5 V, V

= 10 V, ID = 3.5 A

= 4.5 V, ID = 2.8 A

VDS = 4.5 V, ID = 2.5 A

IS = 1.25 A, V

GS

GS

GS

= 0 V

= 10 V

= 0 V

30

1.0 3.0

± 100 nA

0.5

10

6A

0.038 0.047

0.052 0.065

7.0 S

0.8 1.2 V

Dynamic

Gate Charge

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Q

g

Q

gt

Q

gs

Q

gd

R

g

C

iss

C

oss

C

rss

VDS = 15 V, V

V

= 15 V, V

DS

= 5 V, ID = 2.5 A

GS

= 10 V, ID = 2.5 A

GS

f = 1.0 MHz

VDS = 15 V, VGS = 0 V, f = 1 MHz

3.0 4.5

69

1.6

0.6

2.557.5Ω

305

65

29

Switching

t

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Reverse Recovery Time

Body Diode Reverse Recovery Charge

d(on)

t

d(off)

Q

= 15 V, RL = 15 Ω

t

r

t

f

t

rr

rr

V

DD

I

≅ 1 A, V

D

= 10 V, Rg = 6 Ω

GEN

IF = 1.25 A, di/dt = 100 A/µs

711

12 18

14 25

610

14 21

610nC

Notes:
a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Unit

V

µA

Ω

nC

pF

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20

VGS = 10 thru 5 V

16

12

8

Drain Current (A)I

-

D

4

0

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2

0123456

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

4 V

- Drain Current (A)I

3 V

20

16

12

8

D

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

V

GS

TC = 125 °C

25 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

Document Number: 73234

S-80642-Rev. B, 24-Mar-08

- 55 °C