Vishay Si2305DS Schematic [ru]

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Si2305DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 8

Ordering Information:

DS(on)

0.052 at V

0.071 at V

0.108 at V

G

1

S

2

GS

GS

GS

Si2305DS (A5)*

*Marking Code

Si2305DS-T1
Si2305DS-T1-E3 (Lead (Pb)-free)

(Ω)I

= - 4.5 V

= - 2.5 V

= - 1.8 V

(A)

D

± 3.5

± 3

± 2

TO-236

(SOT-23)

D

3

Top View

FEATURES

• TrenchFET® Power MOSFETs: 1.8 V Rated

Pb-free

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a, b

a, b

Operating Junction and Storage Temperature Range

= 25 °C

T

A

T

= 70 °C

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 8

± 8

± 3.5

± 2.8

± 12

- 1.6

1.25

0.8

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 sec

Steady State 130

Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 5 sec.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

R

thJA

100

°C/W

Document Number: 70833
S-61190-Rev. D, 03-Jul-06

www.vishay.com

1

Si2305DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Min Typ Max

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

a

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

b

Tur n - O n T i m e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

V

Q

Q

Q

C

C

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

V

DS

g

V

DS

VDS = - 4 V, VGS = 0 V, f = 1 MHz

≅ - 1.0 A, V

I

D

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 8 V, V

DS

= - 8 V, V

≤ - 5 V, V

V

DS

V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 3.5 A

GS

V

= - 2.5 V, ID = - 3 A

GS

V

= - 1.8 V, ID = - 2 A

GS

GS

= 0 V, TJ = 55 °C

GS

= - 4.5 V

GS

= - 2.5 V

GS

VDS = - 5 V, ID = - 3.5 A

IS = - 1.6 A, V

= - 4 V, V

V

DD

= - 4 V, RL = 4 Ω

GS

= - 4.5 V, ID ≅ - 3.5 A

GS

= - 4.5 V, RG = 6 Ω

GEN

- 8

- 0.45 - 0.8

= 0 V

- 6

- 3

= 0 V

Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Limits

Unit

± 100 nA

- 1

- 10

µA

0.044 0.052

0.060 0.071

0.087 0.108

8.5 S

- 1.2 V

10 15

2

nCGate-Source Charge

2

1245

375

pFOutput Capacitance

210

13 20

25 40

55 80

ns

19 35

V

A

Ω

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2

Document Number: 70833

S-61190-Rev. D, 03-Jul-06