Vishay Si2305CDS Schematic

P-Channel 8 V (D-S) MOSFET

Si2305CDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.035 at V

- 8

0.065 at V

(Ω)

DS(on)

= - 4.5 V - 5.8

GS

= - 2.5 V - 5.0

GS

= - 1.8 V - 4.3

GS

TO-236

(SOT-23)

d

I

(A)

D

Qg (Typ.)

12 nC0.048 at V

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

• DC/DC Converter

G

1

D

3

S

2

Top View

Si2305CDS (N5)*

* Marking Code

Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

T

= 25 °C

C

= 25 °C

T

A

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 8

± 8

- 5.8

- 4.7

a, b

- 4.4

a, b

- 3.5

- 20

- 1.4

a, b

- 0.8

1.7

0.96

0.62

1.1

a, b

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, c

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W.

= 25 °C.

d. T

C

Document Number: 64847 S10-0720-Rev. C, 29-Mar-10

R

thJA

R

thJF

100 130

60 75

°C/W

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1

Si2305CDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

g

Qgs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

= - 8 V, V

DS

= - 8 V, V

V

GS

≤ - 5 V, V

DS

= - 4.5 V, ID = - 4.4 A

GS

= - 2.5 V, ID = - 3.8 A

GS

V

= - 1.8 V, ID = - 2 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 4 V, ID = - 4.4 A

VDS = - 4 V, V

= 0 V, f = 1 MHz

GS

= - 8 V, ID = - 4.4 A

GS

= - 4.5 V, ID = - 4.4 A

GS

f = 1 MHz 1 5.1 10.2 Ω

V

= - 4 V, RL = 1.1 Ω

DD

≅ - 3.5 A, V

I

D

V

≅ - 3.5 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 4 V, RL = 1.1 Ω

= - 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 3.5 A, V

GS

= 0 V

IF = - 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C

- 8 V

- 9

2.5

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

- 10 A

0.028 0.035

0.039 0.048

0.053 0.065

17 S

960

330

300

20 30

12 18

1.5

3.1

20 30

40 60

10 15

35 55

10 15

- 1.4

- 20

- 0.8 - 1.2 V

35 55 ns

14 25 nC

16

19

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

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Document Number: 64847

S10-0720-Rev. C, 29-Mar-10

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2305CDS

Vishay Siliconix

20

VGS= 5 V thru 2 V

15

10

- Drain Current(A)

D

I

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

-- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.15

0.12

V

= 1.8 V

GS

0.09

VGS= 1.5 V

VGS= 1 V

5

TC= 125 °C

4

TC= - 55 °C

3

2

- Drain Current(A)

D

I

1

TC= 25 °C

0

0.0 0.3 0.6 0.9 1.2 1.5

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

1800

1500

C

iss

1200

0.06

- On-Resistance (Ω)

DS(on)

R

0.03

0.00 0 5 10 15 20

VGS=2.5V

VGS= 4.5 V

ID-- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

8

ID= 4.4 A

6

4

- Gate-to-Source Voltage (V) 2

GS

V

0

048 12 16 20

VDS=2 V

VDS= 6.4 V

VDS=4 V

Qg- Total Gate Charge (nC)

Gate Charge

900

600

C - Capacitance (pF)

300

- On-Resistance (Normalized)

DS(on)

R

C

0

02468

1.4

ID= 4.4 A

1.3

1.2

1.1

1.0

0.9

0.8

0.7

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

C

rss

VDS- Drain-to-Source Voltage (V)

oss

Capacitance

VGS=2.5V

VGS=4.5V, 1.8 V

TJ- Junction Temperature (°C)

Document Number: 64847 S10-0720-Rev. C, 29-Mar-10

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3

Si2305CDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

- Source Current (A)

S

I

(V)

GS(th)

V

100

10

1

0.1

0.0 0.3 0.6 0.9 1.2

TJ= 150 °C

- Source-to-Drain Voltage (V)

V

SD

TJ=25 °C

Source-Drain Diode Forward Voltage

0.7

0.6

0.5

0.4

0.3

ID= 250 µA

0.10

ID = 4.4 A, TJ = 125 °C

0.08

0.06

- On-Resistance (Ω)

DS(on)

R

0.04

0.02

0.00

ID = 2 A, TJ = 25 °C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

ID = 2 A, TJ = 125 °C

ID = 4.4 A, TJ = 25 °C

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

30

25

20

15

Power (W)

10

0.2

0.1

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

10

1

- Drain Current (A)

D

I

0.1

TA = 25 °C

0.01

Single Pulse

0.1 1 10

* V

GS

Safe Operating Area, Junction-to-Ambient

Limited byR

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

DS(on)

*

BVDSS Limited

DS(on)

5

0

10 10000.10.010.001 1001

Time (s)

Single Pulse Power, Junction-to-Ambient

1 ms

10 ms

100 ms

1 s, 10 s

DC

is specified

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Document Number: 64847

S10-0720-Rev. C, 29-Mar-10

Vishay Si2305CDS Schematic [ru]