Vishay Si2305ADS Schematic

New Product

P-Channel 8-V (D-S) MOSFET

Si2305ADS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

0.040 at V

- 8

0.088 at V

(Ω)I

DS(on)

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

(A) Qg (Typ)

D

- 4.1

- 3.4

7.8 nC0.060 at V

- 2.0

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

Test e d

g

APPLICATIONS

• Load Switch

• DC/DC Converter

RoHS

COMPLIANT

TO-236

(SOT-23)

S

1

G

D

3

S

2

Top View

Si2305ADS (A5)*

* Marking Code

Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free)

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

T

= 25 °C

C

T

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

C

= 25 °C

T

A

TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

T

= 25 °C

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C 1.1

C

T

= 25 °C

A

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) 260

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s.

V

DS

V

GS

- 8

± 8

V

- 5.4

I

D

I

DM

I

S

- 4.3

- 4.1

- 3.3

- 10

- 1.4

- 0.8

a, b

A

1.7

P

D

, T

T

J

stg

a, b

0.96

a, b

0.62

- 50 to 150

W

°C

Document Number: 69940 S-80258-Rev. A, 04-Feb-08

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1

New Product

Si2305ADS

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 175 °C/W.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Temperature Coefficient

V

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n-On D e l ay Tim e

Rise Time

Turn-Off DelayTime

Fall Time

Tur n-On D e l ay Tim e

Rise Time

Turn-Off DelayTime

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

b

a, b

t ≤ 10 s

Steady State

V

DS

ΔV

DS/TJ

ΔV

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

a

I

D(on)

r

DS(on)

g

C

iss

C

oss

C

rss

Q

gd

R

t

d(on)

t

d(off)

t

d(on)

t

d(off)

t

I

S

I

SM

V

SD

t

rr

Q

t

a

t

b

fs

gs

r

f

r

f

g

rr

V

= 0 V, ID = - 250 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

= - 8 V, V

V

DS

V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 4.1 A

GS

= - 2.5 V, ID = - 3.4 A

V

GS

= - 1.8 V, ID = - 2.0 A

V

GS

V

DS

= - 4 V, V

V

DS

V

= - 4 V, V

DS

V

= - 4 V, V

DS

V

= - 4 V, RL = 1.2 Ω

DD

I

≅ - 3.3 A, V

D

V

= - 4 V, RL = 1.2 Ω

DD

≅ - 3.3 A, V

I

D

IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C

R

thJA

R

thJF

100 130

60 75

°C/W

- 8 V

ID = - 250 µA

- 55

2.1

- 0.45 - 0.8 V

± 100 nA

= - 8 V, VGS = 0 V

= 0 V, TJ = 55 °C

GS

= - 4.5 V

GS

- 5 A

- 1

- 10

0.032 0.040

0.048 0.060

0.070 0.088

= - 5 V, ID = - 4.1 A

8S

740

= 0 V, f = 1 MHz

GS

290

190

= - 4.5 V, ID = - 4.1 A

GS

7.8 15

4.5 9

= - 2.5 V, ID = - 4.1 A

GS

1.2

1.6

f = 1 MHz 1.4 7 14 Ω

13 20

35 53

= - 4.5 V, Rg = 1 Ω

GEN

32 48

10 20

510

11 17

= - 8 V, Rg = 1 Ω

GEN

22 33

16 24

TC = 25 °C

- 1.4

- 10

IF = - 3.3 A

- 0.8 - 1.2 V

33 50 ns

14 21 nC

14

19

mV/°C

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 69940

S-80258-Rev. A, 04-Feb-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2305ADS

Vishay Siliconix

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS= 4.5 thru 2 V

VGS=0.5V

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.10

0.08

0.06

- On-Resistance (Ω)r

DS(on)

0.04

VGS=1.8V

VGS=2.5V

VGS=4.5V

VGS=1.5V

VGS=1V

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0

TC= 125 °C

TC=25 °C

TC= - 55 °C

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

1200

900

600

C - Capacitance (pF)

300

C

iss

C

oss

C

rss

0.02 02468 10

On-Resistance vs. Drain Current and Gate Voltage

4.5

ID=4.1A

3.6

2.7

1.8

- Gate-to-Source Voltage (V)

GS

0.9

V

0.0

0.0 1.5 3.0 4.5 6.0 7.5 9.0

Document Number: 69940 S-80258-Rev. A, 04-Feb-08

ID- Drain Current (A)

VDS=4V

VDS=6.4V

Qg- Total Gate Charge (nC)

Gate Charge

0

02468

VDS- Drain-to-Source Voltage (V)

Capacitance

1.5

1.3

1.1

- On-Resistance (Normalized)

DS(on)

r

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

VDS=2.5V,ID=3.4A

VDS=4.5V,ID=4.1A

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Vishay Si2305ADS Schematic [ru]