Vishay SI2304DDS Schematic

New Product

N-Channel 30-V (D-S) MOSFET

Si2304DDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.060 at V

30

0.075 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

a

I

(A)

D

3.6

Qg (Typ.)

2.1 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• DC/DC Converter

TO-236

(SOT-23)

G

1

3

D

2

S

Top View

Si2304DDS (P4)*

* Marking Code

Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T T T

Pulsed Drain Current

T

Continuous Source-Drain Diode Current

T T

Maximum Power Dissipation

T T

TA = 70 °C Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

C

= 70 °C

C

= 25 °C

A

= 70 °C

A

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

30

± 20

a

3.6

3.3

2.7 15

1.4

b, c

0.9

1.7

1.1

b, c

1.1

b, c

0.7

- 55 to 150 260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W.

Document Number: 65175 S09-1496-Rev. A, 10-Aug-09

b, d

t ≤ 5 s R

thJA

R

thJF

90 115 60 75

°C/W

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1

New Product

Si2304DDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 3.2 A

GS

V

= 4.5 V, ID = 2.8 A

GS

V

= 15 V, ID = 4.8 A

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 5.6 Ω

DD

≅ 2.7 A, V

V

= 15 V, RL = 5.6 Ω

DD

≅ 2.7 A, V

TC = 25 °C

IS = 2.7 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

1.2 2.2 V

= 0 V

10 A

- 5

31

mV/°C

± 100 nA

1

10

0.049 0.060

0.061 0.075

11 S

235

= 0 V, f = 1 MHz

GS

45

17

= 10 V, ID = 3.4 A

GS

4.5 6.7

2.1 3.2

= 4.5 V, ID = 3.4 A

GS

0.85

0.65

f = 1 MHz 0.8 4.4 8.8 Ω

12 20

50 75

= 4.5 V, Rg = 1 Ω

GEN

12 20

22 35

510

12 20

= 10 V, Rg = 1 Ω

GEN

10 15

510

1.4

15

GS

= 0 V

0.8 1.2 V

10 20 ns

510nC

6

4

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65175

S09-1496-Rev. A, 10-Aug-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2304DDS

Vishay Siliconix

15

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

- Drain-to-Source Voltage (V)

DS

VGS=10V thru 4 V

Output Characteristics

0.10

0.08

VGS=4.5V

0.06

0.04

- On-Resistance (Ω)R

DS(on)

0.02

VGS=10V

VGS=3V

5

4

3

TC= - 55 °C

2

- Drain Current (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

- Gate-to-Source Voltage (V)

GS

TC= 25 °C

TC= 125 °C

Transfer Characteristics

300

C

iss

C

oss

C - Capacitance (pF)

250

200

150

100

50

0.00 03691215

On-Resistance vs. Drain Current and Gate Voltage

10

ID=3.4A

8

6

4

- Gate-to-Source Voltage (V) 2

GS

V

0

012345

Document Number: 65175 S09-1496-Rev. A, 10-Aug-09

ID- Drain Current (A)

VDS=7.5V

VDS=24V

VDS=15V

Qg- Total Gate Charge (nC)

Gate Charge

C

rss

0

0 5 10 15 20 25 30

VDS- Drain-to-Source Voltage (V)

Capacitance

1.6

1.5

ID=3.2A

1.4

1.3

1.2

1.1

- On-ResistanceR (Normalized)

1.0

DS(on)

0.9

0.8

0.7

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=10V

On-Resistance vs. Junction Temperature

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New Product

Si2304DDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TJ= 150 °C

- Source Current (A)I 1

S

0.1

0.0 0.3 0.6 0.9 1.2 1.5

VSD-Source-to-Drain Voltage (V)

TJ= 25 °C

Source-Drain Diode Forward Voltage

2.4

2.2

2.0

(V)V

1.8

GS(th)

1.6

ID= 250 µA

0.14

ID=3.2A

0.12

0.10

- On-Resistance (Ω)

0.08

DS(on)

R

0.06

0.04 02468 10

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ=25 °C

On-Resistance vs. Gate-to-Source Voltage

25

20

15

Power (W)

10

1.4

1.2

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

TA= 25 °C

Single Pulse

0.01

0.1 1 10 100

* V

GS

Safe Operating Area, Junction-to-Ambient

*

DS(on)

BVDSS Limited

- Drain-to-Source Voltage (V)

V

DS

> minimum VGSat which R

5

0

DS(on)

10 10000.10.010.001 1001

Time (s)

Single Pulse Power

100 µs

1ms

10 ms

100 ms

1s,10s DC

is specified

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Document Number: 65175

S09-1496-Rev. A, 10-Aug-09

Vishay SI2304DDS Schematic [ru]