Vishay Si2304BDS Schematic

PRODUCT SUMMARY

Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

* Marking Code

Si2304BDS (L4)*

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

VDS (V) R

30

0.070 at V

0.105 at V

()I

DS(on)

= 10 V

GS

= 4.5 V

GS

N-Channel 30 V (D-S) MOSFET

FEATURES

(A) Qg (Typ.)

D

3.2

2.6

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

•100 % R

®

Power MOSFET

Te s te d

g

• Compliant to RoHS Directive 2002/95/EC

Si2304BDS

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

3.2 2.6

2.5 2.1

0.9 0.62

1.08 0.75

0.69 0.48

30

± 20

10

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State

a

t  5 s

Steady State 130 166

R

thJA

R

thJF

Notes: a. Surface mounted on FR4 board, t  5 s. b. Pulse width limited by maximum junction temperature. c. Surface mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

90 115

°C/W

60 75

Document Number: 72503 S11-1908-Rev. E, 26-Sep-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

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1

Si2304BDS

0

2

4

6

8

10

0246810

VGS = 10 thru 5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

4 V

3 V

Vishay Siliconix

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Limits

Parameter Symbol Test Conditions

Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

V

DS

V

DS

= 30 V, V

DS

V

GS

V

GS

= 0 V, TJ = 55 °C

GS

= 1 V, TJ = 25 °C

GS

4.5 V, V

= 10 V, ID = 2.5 A

= 4.5 V, ID = 2 A

VDS = 4.5 V, ID = 2.5 A

IS = 1.25 A, V

GS

= 0 V

= 10 V

= 0 V

30

1.5 3

± 100 nA

0.5

10

1

6A

0.055 0.070

0.080 0.105

6S

0.8 1.2 V

Dynamic

Gate Charge

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Input Capacitance

Reverse Transfer Capacitance

Q

g

Q

gt

Q

gs

Q

gd

R

g

C

iss

C

oss

C

rss

VDS = 15 V, V

V

= 15 V, V

DS

VDS = 15 V, VGS = 0 V, f = 1 MHz

= 5 V, ID = 2.5 A

GS

2.6 4

4.6 7

= 10 V, ID = 2.5 A

GS

0.8

1.15

f = 1 MHz 0.6 3 6 

225

50

28

Switching

Tur n -O n De l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

t

d(on)

t

d(off)

7.5 12

V

t

r

t

f

I

= 15 V, RL = 15 

DD

 1 A, V

D

= 10 V, Rg = 6 

GEN

12.5 20

19 30

15 25

Notes: a. Pulse test: PW  300 µs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Unit

V

µA



nC

pFOutput Capacitance

ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Output Characteristics

10

8

6

4

- Drain Current (A)I

D

2

0

012345

This document is subject to change without notice.

TC = 125 °C

25 °C

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

Document Number: 72503

S11-1908-Rev. E, 26-Sep-11

- 55 °C

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

TJ = 25 °C

10

0.001

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

0.01

0.1

1

0

50

100

150

200

250

300

350

0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

VGS = 10 V I

D

= 2.5 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance (Normalized)

0.00

0.04

0.08

0.12

0.16

0.20

0246810

ID = 2.5 A

-R

DS(on)

VGS - Gate-to-Source Voltage (V)

0.24

0.20

0.16

0.12

-R

0.08

DS(on)

0.04

0.00

10

8

VGS = 4.5 V

VGS = 10 V

0246810

ID - Drain Current (A)

On-Resistance vs. Drain Current

VDS = 15 V

= 2.5 A

I

D

Si2304BDS

Vishay Siliconix

Capacitance

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

012345

Qg - Total Gate Charge (nC)

Gate Charge

On-Resistance vs. Junction Temperature

Document Number: 72503 S11-1908-Rev. E, 26-Sep-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

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This document is subject to change without notice.

Vishay Si2304BDS Schematic [ru]