Vishay Si2303CDS Schematic

P-Channel 30-V (D-S) MOSFET

Si2303CDS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.190 at V

- 30

0.330 at V

DS(on)

GS

(Ω)

= - 10 V

= - 4.5 V

I

D

- 2.7

- 2.1

(A)

a

Qg (Typ.)

2 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• 100 % UIS Tested

APPLICATIONS

• Load Switch

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2303CDS (N3)*

* Marking Code

Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free) Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Avalanche Current Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

L = 0.1 mH

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

- 30

± 20

V

- 2.7

I

D

I

DM

I

S

I

AS

E

AS

- 2.2

- 1.9

- 1.5

- 10

- 1.75

- 0.83

- 5

1.25

b, c

A

b, c

mJ

2.3

P

D

T

, T

J

stg

1.5

b, c

1.0

b, c

0.7

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 s. d. Maximum under Steady State conditions is 160 °C/W.

Document Number: 69991 S-83053-Rev. B, 29-Dec-08

b, d

≤ 5 s

Steady State

R

thJA

R

thJF

80 120

35 55

°C/W

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1

Si2303CDS

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n D el a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n D el a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

Δ

V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

= - 1.5 A, V

I

D

≅ - 1.5 A, V

I

D

IF = - 1.5 A, di/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

DS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, V

DS

= - 30 V, V

DS

V

GS

V

= - 4.5 V, ID = - 1.4 A

GS

= 0 V, TJ = 55 °C

GS

≤ - 5 V, V

GS

= - 10 V, ID = - 1.9 A

VDS = - 5 V, ID = - 1.9 A

= - 15 V, V

DS

= - 15 V, V

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 1.9 A

GS

= - 4.5 V, ID = - 1.9 A

GS

f = 1 MHz 1.7 8.5 17 Ω

V

= - 15 V, RL = 10 Ω

DD

V

DD

= - 10 V, RG = 1 Ω

GEN

= - 15 V, RL = 10 Ω

= - 4.5 V, RG = 1 Ω

GEN

TC = 25 °C

IS = - 1.5 A

= 0 V

GS

= - 10 V

- 30 V

- 27

3.8

mV/°C

- 1 - 3 V

± 100 nA

- 1

- 10

µA

- 10 A

0.158 0.190

0.275 0.330

2S

155

35

25

48

24

0.6

nC

1

48

11 18

816

36 44

37 45

12 18

914

- 1.75

- 10

- 0.8 - 1.2 V

17 26 ns

914nC

12

5

Ω

pFOutput Capacitance

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 69991

S-83053-Rev. B, 29-Dec-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2303CDS

Vishay Siliconix

10

8

6

4

- Drain Current (A)I

D

2

0

012345

- Drain-to-Source Voltage (V)

V

DS

VGS=10thru 5 V

VGS=4V

VGS=3V

Output Characteristics

0.5

0.4

0.3

VGS=4.5V

1.0

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0 01234

V

TC= 125 °C

TC= 25 °C

- Gate-to-Source Voltage (V)

GS

TC= - 55 °C

Transfer Characteristics

300

240

180

C

iss

- On-Resistance (Ω)R

DS(on)

0.2

0.1

0

02468 10

ID- Drain Current (A)

VGS= 10 V

On-Resistance vs. Drain Current and Gate Voltage

10

ID=1.9A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

01234

Qg- Total Gate Charge (nC)

VDS=15V

Gate Charge

VDS=24V

120

C - Capacitance (pF)

60

C

rss

0

0 6 12 18 24 30

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

1.6

1.4

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

VGS=10V,ID=1.9A

VGS=4.5V,ID=1.4A

T

-Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

Document Number: 69991 S-83053-Rev. B, 29-Dec-08

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3

Si2303CDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

TJ= 150 °C

1

- Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

-Source-to-Drain Voltage (V)

SD

Source-Drain Diode Forward Voltage

2.2

2.0

ID= 250 µA

(V)V

8

1.

GS(th)

1.6

TJ= 25 °C

- On-Resistance (Ω)R

DS(on)

0.5

ID=1.9A

0.4

0.3

TJ= 125 °C

0.2

0.1

0.0 048 12 16 20

VGS- Gate-to-Source Voltage (V)

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

6

5

4

3

Power (W)

2

1

1.4

- 50 - 25 0 25 50 75 100 125 150

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TJ- Temperature (°C)

Threshold Voltage

- Drain Current (A)I

D

10

Limited byR

1

0.1

Single Pulse

0.01

0.1 1 10

* V

DS(on)*

TA= 25 °C

V

DS

> minimum VGSat which R

GS

BVDSS Limited

- Drain-to-Source Voltage (V)

Safe Operating Area

0

0.01 0.1 1 10 100 1000

Time (s)

Single Pulse Power

100 µs

1ms

10 ms

100 ms

1s,10s DC

100

is specified

DS(on)

Document Number: 69991

S-83053-Rev. B, 29-Dec-08

Vishay Si2303CDS Schematic [ru]