Vishay Si2303BDS Schematic

P-Channel 30-V (D-S) MOSFET

Si2303BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 30

DS(on)

0.200 at V

0.380 at V

GS

(Ω)

= - 10 V

= - 4.5 V

I

(A)

D

- 1.64

- 1.0

b

FEATURES

• Halogen-free Option Available

RoHS*

COMPLIANT

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2303BDS (L3)*

* Marking Code

Ordering Information: Si2303BDS-T1

Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source Current (Diode Conduction)

Power Dissipation

b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 1.64 - 1.49

- 1.31 - 1.2

- 0.75 - 0.6

0.57 0.45

- 30

± 20

- 10

0.9 0.7

- 55 to 150 °C

V

A

W

Pb-free

Available

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b

c

R

thJA

Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72065 S-80642-Rev. C, 24-Mar-08

120 145

140 175

°C/W

www.vishay.com

1

Si2303BDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions

Min. Typ. Max.

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n Ti m e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

g

V

DS

V

DS

VDS = - 15 V, VGS = 0 V, f = 1 MHz

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, V

DS

= - 30 V, V

≤ - 5 V, V

DS

V

= - 10 V, ID = - 1.7 A

GS

V

= - 4.5 V, ID = - 1.3 A

GS

= 0 V, TJ = 55 °C

GS

= - 10 V

GS

VDS = - 5 V, ID = - 1.7 A

IS = - 0.75 A, V

= - 15 V, V

V

= - 15 V, RL = 15 Ω

DD

I

≅ - 1.0 A, V

D

GS

= - 10 V, ID ≅ - 1.7 A

GS

= - 4.5 V

GEN

= 6 Ω

R

G

= 0 V

- 30

- 1.0 - 3.0

± 100 nA

- 1

- 10

- 6 A

0.150 0.200

0.285 0.380

2.0 S

- 0.85 - 1.2 V

4.3 10

0.8

1.3

180

50

35

55 80

40 60

10 20

Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Unit

V

µA

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

www.vishay.com 2

Document Number: 72065

S-80642-Rev. C, 24-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2303BDS

Vishay Siliconix

10

VGS = 10 thru 6 V

8

6

4

- Drain Current (A)I

D

2

0

0246810

VDS - Drain-to-Source Voltage (V)

Output Characteristics

0.8

0.6

VGS = 4.5 V

0.4

5 V

4 V

2 V, 3 V

10

8

6

4

- Drain Current (A)I

D

2

0

01234567

VGS - Gate-to-Source Voltage (V)

TC = - 55°C

25 °C

Transfer Characteristics

300

250

C

200

150

iss

125 °C

- On-Resistance (Ω)R

DS(on)

0.2

0.0 0246810

ID - Drain Current (A)

VGS = 10 V

On-Resistance vs. Drain Current

10

VDS = 15 V

= 1.7 A

I

D

8

6

4

- Gate-to-Source Voltage (V)

2

GS

V

0

012345

Qg - Total Gate Charge (nC)

Gate Charge

100

C - Capacitance (pF)

50

C

rss

0

0 5 10 15 20 25 30

1.6

1.4

1.2

- On-ResistanceR

1.0

(Normalized)

DS(on)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

C

oss

VDS - Drain-to-Source Voltage

Capacitance

VGS = 10 V

= 1.7 A

I

D

- Junction Temperature (°C)

T

J

Document Number: 72065 S-80642-Rev. C, 24-Mar-08

www.vishay.com

3

Vishay Si2303BDS Schematic [ru]