Vishay Si2302CDS Schematic

PRODUCT SUMMARY

Ordering Information: Si2302CDS-T1-E3 (Lead (Pb)-free) Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

* Marking Code

Si2302CDS (N2)*

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

VDS (V) R

20

0.057 at V

0.075 at V

()I

DS(on)

= 4.5 V

GS

= 2.5 V

GS

N-Channel 20 V (D-S) MOSFET

FEATURES

(A) Qg (Typ.)

D

2.9

2.6

3.5

• TrenchFET® Power MOSFET

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Load Switching for Portable Devices

• DC/DC Converter

Si2302CDS

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

b

Continuous Source Current (Diode Conduction)

Power Dissipation

a

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot Steady State

Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.

Document Number: 68645 S12-2336-Rev. D, 01-Oct-12

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

a

For technical questions, contact: pmostechsupport@vishay.comm

This document is subject to change without notice.

V

DS

V

GS

TA = 25 °C

T

= 70 °C

A

TA = 25 °C

= 70 °C

T

A

t  5 s

Steady State 140 175

I

D

I

DM

I

S

P

D

T

, T

J

stg

R

thJA

R

thJF

2.9 2.6

2.3 2.1

0.72 0.6

0.86 0.71

0.55 0.46

120 145

62 78

20

± 8

10

- 55 to 150 °C

V

A

W

°C/W

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1

Si2302CDS

0

2

4

6

8

10

0.0 0.4 0.8 1.2 1.6 2.0

VGS- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

TC= 25 °C

TC= 125 °C

TC= - 55 °C

Vishay Siliconix

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Limits

Parameter Symbol Test Conditions

Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Gate Resistance

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= 20 V, V

DS

V

= 20 V, V

DS

V

DS

= 20 V, V

GS

10 V, V

DS

V

= 4.5 V, ID = 3.6 A

GS

V

= 2.5 V, ID = 3.1 A

GS

VDS = 5 V, ID = 3.6 A

IS = 0.95 A, V

V

= 10 V, V

DS

GS

f = 1 MHz 2 4 8 

= 0 V

GS

= 0 V, TJ = 50 °C

= 0 V, TJ = 70 °C

= 4.5 V

GS

= 0 V

GS

= 4.5 V, ID = 3.6 A

20

0.40 0.85

± 100 nA

0.1

4

15

6A

0.045 0.057

0.056 0.075

13 S

0.7 1.2 V

3.5 5.5

0.6

0.45

Switching

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Body Diode Reverse Recovery Charge

t

d(on)

t

d(off)

Q

t

r

t

f

t

rr

V

= 10 V, RL = 2.78 

DD

 3.6 A, V

I

D

= 4.5 V, Rg = 1 

GEN

IF = 3.6 A, dI/dt = 100 A/µs

815

715

30 45

715

8.5 15

24nC

Notes: a. Pulse test: Pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Unit

V

µA



nCGate-Source Charge

ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

VGS=5V thru 2 V

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0

www.vishay.com 2

VDS- Drain-to-Source Voltage (V)

Output Characteristics

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VGS=1.5V

VGS=1V

Transfer Characteristics

For technical questions, contact: pmostechsupport@vishay.comm

This document is subject to change without notice.

Document Number: 68645

S12-2336-Rev. D, 01-Oct-12

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

80

160

240

320

400

0 5 10 15 20

C

iss

VDS- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

TJ-Junction Temperature (°C)

(Normalized)

- On-Resistance

R

DS(on)

VGS=2.5V,ID=3.1A

VGS=4.5V,ID=3.6A

0.03

0.04

0.05

0.06

0.07

02468 10

- On-Resistance (Ω)R

DS(on)

ID- Drain Current (A)

VGS=2.5V

VGS=4.5V

2.0

1.6

1.2

0.8

- Drain Current (A)I

D

0.4

TC= 125 °C

0.0

0.0 0.3 0.6 0.9 1.2 1.5

TC= 25 °C

TC= - 55 °C

VGS- Gate-to-Source Voltage (V)

Si2302CDS

Vishay Siliconix

Transfer Characteristics

Capacitance

On-Resistance vs. Drain Current

5

ID=3.6A

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

01234

Qg- Total Gate Charge (nC)

VDS=10V

VDS= 5 V

VDS= 15 V

Gate Charge

100

10

TJ= 150 °C

1

Document Number: 68645 S12-2336-Rev. D, 01-Oct-12

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Junction Temperature

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD-Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

For technical questions, contact: pmostechsupport@vishay.comm

This document is subject to change without notice.

TJ= 25 °C

TJ= - 55 °C

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Vishay Si2302CDS Schematic [ru]