Vishay Si2302ADS Schematic

N-Channel 2.5-V (G-S) MOSFET

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2302ADS (2A)*

* Marking Code

Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free)

Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si2302ADS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

20

DS(on)

0.060 at V

0.115 at V

(Ω)I

= 4.5 V 2.4

GS

= 2.5 V 2.0

GS

D

(A)

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

•100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source Current (Diode Conduction)

Power Dissipation

a

Operating Junction and Storage Temperature Range T

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Notes: a. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm

Document Number: 71831 S11-2000-Rev. J, 10-Oct-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

a

TA = 25 °C

T

= 70 °C 1.9 1.7

A

a

TA = 25 °C

= 70 °C 0.57 0.46

T

A

t ≤ 5 s

Steady State 140 175

R

This document is subject to change without notice.

I

J

thJA

P

, T

DS

GS

I

D

DM

I

20

± 8

V

2.4 2.1

10

S

D

stg

0.94 0.6

0.9 0.7

- 55 to 150 °C

115 140

A

W

°C/W

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Si2302ADS

Vishay Siliconix

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage V

Gate Threshold Voltage V

Gate Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage V

Dynamic

Total Gate Charge Q

Gate-Drain Charge Q

Input Capacitance

Reverse Transfer Capacitance

Gate Resistance R

Switching

Tur n -O n De l a y T i m e

Rise Time

Turn-Off DelayTime

Fall Time

Notes: a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %. b. Effective for production 10/04.

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

R

DS(on)

g

fs

SD

g

gs

1.5

gd

C

iss

C

oss

C

rss

g

t

d(on)

t

r

t

d(off)

t

f

V

DS

V

DS

V

DS

I

≅ 3.6 A, V

D

= 0 V, ID = 10 µA 20

GS

V

= VGS, ID = 50 µA 0.65 0.95 1.2

DS

VDS = 0 V, VGS = ± 8 V ± 100 nA

V

= 20 V, VGS = 0 V 0.1

DS

= 20 V, V

V

DS

V

DS

V

GS

V

GS

V

DS

IS = 0.94 A, V

= 0 V, TJ = 55 °C 2.0

GS

≥ 5 V, V

= 4.5 V, ID = 3.6 A 0.045 0.060

= 4.5 V 6

GS

= 2.5 V 4

GS

b

= 2.5 V, ID = 3.1 A 0.070 0.115

= 5 V, ID = 3.6 A 8 S

= 0 V 0.76 1.2 V

GS

4.0 10

= 10 V, V

= 4.5 V, ID = 3.6 A

GS

0.65

300

= 10 V, V

= 0 V, f = 1 MHz

GS

120

80

f = 1 MHz 0.5 1 2 Ω

715

V

= 10 V, RL = 2.8 Ω

DD

= 4.5 V, Rg = 6 Ω

GEN

55 80

16 60

10 25

V

µA

A

Ω

nCGate-Source Charge Q

pFOutput Capacitance

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 71831

S11-2000-Rev. J, 10-Oct-11

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

VDS - Drain-to-Source Voltage (V)

)A( tnerruC niarD -I

D

0

2

4

6

8

10

012345

0 V, 0.5 V, 1 V

VGS = 5 V thru 2.5 V

1.5 V

2 V

0

1

2

3

4

5

012345

)V( ega

tlo

V

e cruo

S

-ot-eta

G

-

Qg - Total Gate Charge (nC)

V

GS

V

DS

= 10 V

I

D

= 3.6 A

0

2

4

6

8

10

0.0 0.5 1.0 1.5 2.0 2.5

V

GS

- Gate-to-Source Voltage (V)

)A( tnerruC niarD -I

D

T C = 125 °C

- 55 °C

25 °C

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 0 50 100 150

V

GS

= 4.5 V

I

D

= 3.6 A

T

J

- Junction Temperature (°C)

R

) n o (

S D

e c n a

t s i s

e R -

n O -

) d ezi

l a

m roN(

Si2302ADS

Vishay Siliconix

Output Characteristics

0.15

0.12

(Ω ecnatsiseR-

0.09

n O

0.06

-)

)n o(SD

R

0.03

0.00 02468 10

V

= 2.5 V

GS

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

V

= 4.5 V

GS

Transfer Characteristics

600

500

)Fp( ecnatica

400

C

300

p aC - C

200

100

0

04

C

rss

- Drain-to-Source Voltage (V)

V

DS

iss

oss

8 12 16 20

Capacitance

Gate Charge

Document Number: 71831 S11-2000-Rev. J, 10-Oct-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Junction Temperature

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This document is subject to change without notice.

Vishay Si2302ADS Schematic [ru]