Vishay Si2301DS Schematic [ru]
PRODUCT SUMMARY
V
b
b
Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
VDS (V) r
-20
0.130 @ V
0.190 @ V
(W) ID (A)
DS(on)
= -4.5 V -2.3
GS
= -2.5 V -1.9
GS
TO-236
(SOT-23)
G
1
D
S
2
3
Top View
Si2301DS (A1)*
*Marking Code
Ordering Information: Si2301DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
a
_
b
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
b
c
DS
GS
I
D
I
DM
I
S
P
D
stg
R
thJA
-20
"8
-2.3
-1.5
-10
-1.6
1.25
0.8
-55 to 150 _C
100
166
_C/W
A
W
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
www.vishay.com
1
Si2301DS
ID ^ -2.8 A
ID ^ -1.0 A, V
=
V
T
Off Ti
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Limits
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage V
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
b
Switching
Turn-On Time
-
urn-
me
a
a
a
c
(BR)DSS
I
r
DS(on)
t
t
GS(th)
GSS
DSS
D(on)
g
fs
SD
g
gs
gd
iss
oss
rss
d(on)
t
r
d(off)
t
f
VGS = 0 V, ID = -250 mA -20
VDS = VGS, ID = -250 mA - 0.45
VDS = 0 V, VGS = "8 V "100 nA
VDS = -20 V, VGS = 0 V -1
VDS = -20 V, VGS = 0 V, TJ = 55_C -10
VDS v -5 V, VGS = -4.5 V -6
VDS v -5 V, VGS = -2.5 V -3
VGS = -4.5 V, ID = -2.8 A 0.105 0.130
VGS = -2.5 V, ID = -2.0 A 0.145 0.190
VDS = -5 V, ID = -2.8 A 6.5 S
IS = -1.6 A, VGS = 0 V -0.80 -1.2 V
5.8 10
VDS = -6 V, VGS = -4.5 V
I
^ -2.8 A
D
VDS = -6 V, VGS = 0, f = 1 MHz
VDD = -6 V, RL = 6 W
RG = 6 W
GEN
-
- 4.5
0.85
1.70
415
223
87
13.0 25
36.0 60
42 70
34 60
V
mA
A
W
nC
pF
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
2
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
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